Inventor · disambiguated record
Manfred Ramin
Also filed as: RAMIN MANFRED · RAMIN MANFRED B
12 granted patents·4 pending applications·61 citations·filing 2006–2014
89Inventor score
Top patents by PatentIndex Score
16 records- 0191US7737015B2Formation of fully silicided gate with oxide barrier on the source/drain silicide regionsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 15, 2010·25 cites·33 claims
- 0283US7560379B2Semiconductive device fabricated using a raised layer to silicide the gateTEXAS INSTRUMENTS INC·Filed 2006·Granted Jul 14, 2009·12 cites·18 claims
- 0378US7858459B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 28, 2010·5 cites·4 claims
- 0475US7807522B2Lanthanide series metal implant to control work function of metal gate electrodesTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 5, 2010·6 cites·12 claims
- 0575US7629212B2Doped WGe to form dual metal gatesTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 8, 2009·6 cites·20 claims
- 0669US8304333B2Method of forming a high-k gate dielectric layerRAMIN MANFRED·Filed 2010·Granted Nov 6, 2012·2 cites·11 claims
- 0763US8304342B2Sacrificial CMP etch stop layerPAS MICHAEL FRANCIS·Filed 2006·Granted Nov 6, 2012·3 cites·26 claims
- 0863US7799669B2Method of forming a high-k gate dielectric layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 21, 2010·1 cites·23 claims
- 0960US8748246B2Integration scheme for dual work function metal gatesRAMIN MANFRED·Filed 2010·Granted Jun 10, 2014·1 cites·27 claims
- 1055US2014315377A1Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 1154US8802519B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 12, 2014·0 cites·3 claims
- 1250US2009039439A1Integration Scheme for Dual Work Function Metal GatesTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1348US8409943B2Work function adjustment with the implant of lanthanidesRAMIN MANFRED·Filed 2010·Granted Apr 2, 2013·0 cites·14 claims
- 1448US2008237743A1Integration Scheme for Dual Work Function Metal GatesTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1546US8043947B2Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrateTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 25, 2011·0 cites·15 claims
- 1638US2007178683A1Semiconductive device fabricated using a two step approach to silicide a gate and source/drainsTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →