Inventor · disambiguated record
Dimitri Antoniadis
Also filed as: ANTONIADIS DIMITRI · ANTONIADIS DIMITRI A
12 granted patents·1 pending application·729 citations·filing 1984–2019
94Inventor score
Files withMASSACHUSETTS INST TECHNOLOGY8AMBERWAVE SYSTEMS CORP2ANTONIADIS DIMITRI A1MASACHUSETTS INST OF TECHNOLOG1UNIV NANYANG TECH1
Top patents by PatentIndex Score
13 records- 0197US6573126B2Process for producing semiconductor article using graded epitaxial growthMASSACHUSETTS INST TECHNOLOGY·Filed 2001·Granted Jun 3, 2003·209 cites·44 claims
- 0296US6737670B2Semiconductor substrate structureMASSACHUSETTS INST TECHNOLOGY·Filed 2003·Granted May 18, 2004·90 cites·53 claims
- 0395US7348259B2Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layersMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Mar 25, 2008·27 cites·8 claims
- 0495US6713326B2Process for producing semiconductor article using graded epitaxial growthMASACHUSETTS INST OF TECHNOLOG·Filed 2003·Granted Mar 30, 2004·150 cites·19 claims
- 0594US6940089B2Semiconductor device structureMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Sep 6, 2005·62 cites·16 claims
- 0692US7304336B2FinFET structure and method to make the sameMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Dec 4, 2007·59 cites·16 claims
- 0792US6991972B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 31, 2006·49 cites·50 claims
- 0892US6921914B2Process for producing semiconductor article using graded epitaxial growthMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Jul 26, 2005·49 cites·9 claims
- 0990US7390701B2Method of forming a digitalized semiconductor structureMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Jun 24, 2008·16 cites·20 claims
- 1082US11303316B2Apparatus and method for wireless communicationUNIV NANYANG TECH·Filed 2019·Granted Apr 12, 2022·4 cites·19 claims
- 1177US7074655B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Jul 11, 2006·5 cites·31 claims
- 1241US4565599AGraphoepitaxy by encapsulationMASSACHUSETTS INST TECHNOLOGY·Filed 1984·Granted Jan 21, 1986·9 cites·7 claims
- 1337US2005274978A1Single metal gate material CMOS using strained si-silicon germanium heterojunction layered substrateANTONIADIS DIMITRI A·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →