Inventor · disambiguated record
Yoshikazu Oshika
Also filed as: OSHIKA YOSHIKAZU
8 granted patents·2 pending applications·9 citations·filing 2006–2011
79Inventor score
Top patents by PatentIndex Score
10 records- 0176US8986446B2Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingotOSHIKA YOSHIKAZU·Filed 2010·Granted Mar 24, 2015·1 cites·7 claims
- 0266US8581106B2SubmountOSHIKA YOSHIKAZU·Filed 2011·Granted Nov 12, 2013·2 cites·1 claims
- 0357US8472208B2Submount and method of manufacturing the sameOSHIKA YOSHIKAZU·Filed 2006·Granted Jun 25, 2013·1 cites·5 claims
- 0456US8516692B2Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrateOSHIKA YOSHIKAZU·Filed 2007·Granted Aug 27, 2013·2 cites·2 claims
- 0556US8404359B2Solder layer and electronic device bonding substrate and submount using the sameOSHIKA YOSHIKAZU·Filed 2007·Granted Mar 26, 2013·1 cites·3 claims
- 0655US8310047B2Solder layer, heat sink using such a solder layer and method for manufacturing such a heat sinkNAKANO MASAYUKI·Filed 2006·Granted Nov 13, 2012·1 cites·10 claims
- 0753US8747579B2Solder layer and device bonding substrate using the same and method for manufacturing such a substrateOSHIKA YOSHIKAZU·Filed 2008·Granted Jun 10, 2014·1 cites·6 claims
- 0850US2009098377A1Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal IngotDOWA ELECTRONICS MATERIALS CO LTD·Filed 2006·Application pending·0 cites
- 0947US7800096B2Light emitting semiconductorDOWA ELECTRONICS MATERIALS CO LTD·Filed 2009·Granted Sep 21, 2010·0 cites·19 claims
- 1037US2009151982A1Metal-ceramic composite substrate and method of its manufactureOSHIKA YOSHIKAZU·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →