Inventor · disambiguated record
Jan Willem Maes
Also filed as: MAES JAN · MAES JAN W · MAES JAN WILLEM · MAES JAN WILLEM HUB
103 granted patents·25 pending applications·5,225 citations·filing 2001–2025
99Inventor score
Top patents by PatentIndex Score
128 records- 0198US10847361B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2020·Granted Nov 24, 2020·16 cites·20 claims
- 0298US10480064B2Reaction chamber passivation and selective deposition of metallic filmsASM IP HOLDING BV·Filed 2018·Granted Nov 19, 2019·47 cites·20 claims
- 0398US10453701B2Deposition of organic filmsASM IP HOLDING BV·Filed 2017·Granted Oct 22, 2019·55 cites·20 claims
- 0498US10361201B2Semiconductor structure and device formed using selective epitaxial processASM IP HOLDING BV·Filed 2016·Granted Jul 23, 2019·412 cites·9 claims
- 0598US10041166B2Reaction chamber passivation and selective deposition of metallic filmsASM IP HOLDING BV·Filed 2017·Granted Aug 7, 2018·57 cites·20 claims
- 0698US10032628B2Source/drain performance through conformal solid state dopingASM IP HOLDING BV·Filed 2016·Granted Jul 24, 2018·463 cites·16 claims
- 0798US9916980B1Method of forming a structure on a substrateASM IP HOLDING BV·Filed 2016·Granted Mar 13, 2018·480 cites·23 claims
- 0898US9803277B1Reaction chamber passivation and selective deposition of metallic filmsASM IP HOLDING BV·Filed 2016·Granted Oct 31, 2017·87 cites·19 claims
- 0998US9245742B2Sulfur-containing thin filmsASM IP HOLDING BV·Filed 2013·Granted Jan 26, 2016·476 cites·12 claims
- 1098US9240412B2Semiconductor structure and device and methods of forming same using selective epitaxial processASM IP HOLDING BV·Filed 2013·Granted Jan 19, 2016·503 cites·20 claims
- 1198US8841182B1Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2013·Granted Sep 23, 2014·529 cites·22 claims
- 1298US7795160B2ALD of metal silicate filmsASM INC·Filed 2006·Granted Sep 14, 2010·412 cites·31 claims
- 1397US11450529B2Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surfaceASM IP HOLDING BV·Filed 2020·Granted Sep 20, 2022·9 cites·19 claims
- 1497US11094535B2Selective passivation and selective depositionASM IP HOLDING BV·Filed 2018·Granted Aug 17, 2021·20 cites·19 claims
- 1597US10923361B2Deposition of organic filmsASM IP HOLDING BV·Filed 2019·Granted Feb 16, 2021·19 cites·24 claims
- 1697US10903113B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2020·Granted Jan 26, 2021·16 cites·20 claims
- 1797US10367080B2Method of forming a germanium oxynitride filmASM IP HOLDING BV·Filed 2016·Granted Jul 30, 2019·375 cites·20 claims
- 1897US10204782B2Combined anneal and selective deposition processASM IP HOLDING BV·Filed 2016·Granted Feb 12, 2019·52 cites·24 claims
- 1996US11885014B2Transition metal nitride deposition methodASM IP HOLDING BV·Filed 2022·Granted Jan 30, 2024·3 cites·11 claims
- 2096US11830732B2Selective passivation and selective depositionASM IP HOLDING BV·Filed 2021·Granted Nov 28, 2023·2 cites·20 claims
- 2196US11145506B2Selective passivation and selective depositionASM IP HOLDING BV·Filed 2019·Granted Oct 12, 2021·12 cites·23 claims
- 2296US11139163B2Selective deposition of SiOC thin filmsASM IP HOLDING BV·Filed 2020·Granted Oct 5, 2021·3 cites·20 claims
- 2396US10793946B1Reaction chamber passivation and selective deposition of metallic filmsASM IP HOLDING BV·Filed 2019·Granted Oct 6, 2020·17 cites·21 claims
- 2496US10643904B2Methods for forming a semiconductor device and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted May 5, 2020·19 cites·20 claims
- 2596US10566185B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2015·Granted Feb 18, 2020·22 cites·26 claims
- 2696US10553482B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2018·Granted Feb 4, 2020·18 cites·20 claims
- 2796US10121699B2Selective deposition of aluminum and nitrogen containing materialASM IP HOLDING BV·Filed 2017·Granted Nov 6, 2018·23 cites·21 claims
- 2896US9552979B2Cyclic aluminum nitride deposition in a batch reactorASM IP HOLDING BV·Filed 2013·Granted Jan 24, 2017·43 cites·25 claims
- 2996US9136180B2Process for depositing electrode with high effective work functionMACHKAOUTSAN VLADIMIR·Filed 2012·Granted Sep 15, 2015·466 cites·38 claims
- 3096US6818517B1Methods of depositing two or more layers on a substrate in situASM INT·Filed 2003·Granted Nov 16, 2004·119 cites·35 claims
- 3195US11664219B2Selective deposition of SiOC thin filmsASM IP HOLDING BV·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 3295US10055536B2Systems and methods for forming and utilizing bending maps for object designMAT NV·Filed 2015·Granted Aug 21, 2018·115 cites·20 claims
- 3395US7629267B2High stress nitride film and method for formation thereofASM INT·Filed 2006·Granted Dec 8, 2009·83 cites·14 claims
- 3495US7608549B2Method of forming non-conformal layersASM INC·Filed 2006·Granted Oct 27, 2009·40 cites·26 claims
- 3594US11915929B2Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surfaceASM IP HOLDING BV·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 3694US9553148B2Method of making a wire-based semiconductor deviceASM IP HOLDING BV·Filed 2015·Granted Jan 24, 2017·10 cites·13 claims
- 3794US9461134B1Method for forming source/drain contact structure with chalcogen passivationASM IP HOLDING BV·Filed 2015·Granted Oct 4, 2016·12 cites·23 claims
- 3893US11728175B2Deposition of organic filmsASM IP HOLDING BV·Filed 2020·Granted Aug 15, 2023·2 cites·19 claims
- 3993US8334218B2Method of forming non-conformal layersVAN NOOTEN SEBASTIAN E·Filed 2009·Granted Dec 18, 2012·58 cites·15 claims
- 4091US11217444B2Method for forming an ultraviolet radiation responsive metal oxide-containing filmASM IP HOLDING BV·Filed 2018·Granted Jan 4, 2022·2 cites·26 claims
- 4190US9711396B2Method for forming metal chalcogenide thin films on a semiconductor deviceASM IP HOLDING BV·Filed 2015·Granted Jul 18, 2017·7 cites·20 claims
- 4289US12365984B2Transition metal deposition processes and deposition assemblyASM IP HOLDING BV·Filed 2023·Granted Jul 22, 2025·1 cites·19 claims
- 4388US12406881B2Methods and systems for filling a gapASM IP HOLDING BV·Filed 2022·Granted Sep 2, 2025·1 cites·17 claims
- 4488US11447861B2Sequential infiltration synthesis apparatus and a method of forming a patterned structureASM IP HOLDING BV·Filed 2016·Granted Sep 20, 2022·4 cites·13 claims
- 4588US10056249B2Atomic layer deposition of antimony oxide filmsASM INT NV·Filed 2016·Granted Aug 21, 2018·4 cites·20 claims
- 4687US11022879B2Method of forming an enhanced unexposed photoresist layerASM IP HOLDING BV·Filed 2018·Granted Jun 1, 2021·3 cites·21 claims
- 4787US9478419B2Sulfur-containing thin filmsASM IP HOLDING BV·Filed 2013·Granted Oct 25, 2016·7 cites·19 claims
- 4886US9741815B2Metal selenide and metal telluride thin films for semiconductor device applicationsASM IP HOLDING BV·Filed 2015·Granted Aug 22, 2017·5 cites·23 claims
- 4986US9520562B2Method of making a resistive random access memoryASM IP HOLDING BV·Filed 2014·Granted Dec 13, 2016·7 cites·56 claims
- 5086US9236247B2Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2014·Granted Jan 12, 2016·5 cites·22 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →