Individual holder
SNYDER JOHN P
US·4 granted patents·6 pending applications·47 citations·filing 2005–2011
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
10 records- 0195US8760846B1Apparatus and method for capacitors having engineered electrodes with very high energy densitySNYDER JOHN P·Filed 2011·Granted Jun 24, 2014·13 cites·20 claims
- 0290US8058167B2Dynamic Schottky barrier MOSFET device and method of manufactureSNYDER JOHN P·Filed 2009·Granted Nov 15, 2011·15 cites·21 claims
- 0388US8154025B2Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2009·Granted Apr 10, 2012·13 cites·20 claims
- 0482US8084342B2Method of manufacturing a CMOS device with zero soft error rateSNYDER JOHN P·Filed 2010·Granted Dec 27, 2011·6 cites·7 claims
- 0550US2012056250A1Dynamic schottky barrier mosfet device and method of manufactureSNYDER JOHN P·Filed 2011·Application pending·0 cites
- 0648US2007187756A1Metal Source Power Transistor And Method Of ManufactureSNYDER JOHN P·Filed 2007·Application pending·0 cites
- 0747US2012126311A1Power transistor with metal source and method of manufactureSNYDER JOHN P·Filed 2011·Application pending·0 cites
- 0845US2007194353A1Metal source/drain Schottky barrier silicon-on-nothing MOSFET device and method thereofSNYDER JOHN P·Filed 2006·Application pending·0 cites
- 0945US2005287730A1Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2005·Application pending·0 cites
- 1038US2006079059A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateSNYDER JOHN P·Filed 2005·Application pending·0 cites
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