Assignee
SHANGHAI IC R & D CT
CN·1 granted patent·1 pending application·13 citations·filing 2006–2008
Top patents by PatentIndex Score
2 records- 0180US7602038B2Damascene structure having a reduced permittivity and manufacturing method thereofSHANGHAI IC R & D CT·Filed 2006·Granted Oct 13, 2009·13 cites·11 claims
- 0243US2008246087A1Mos transistor for reducing short-channel effects and its productionSHANGHAI IC R & D CT·Filed 2008·Application pending·0 cites
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