Assignee
FORCE MOS TECHNOLOGY CORP
TW·10 granted patents·4 pending applications·110 citations·filing 2006–2009
Top patents by PatentIndex Score
14 records- 0195US7511357B2Trenched MOSFETs with improved gate-drain (GD) clamp diodesFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Mar 31, 2009·33 cites·12 claims
- 0290US8022471B2Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structuresFORCE MOS TECHNOLOGY CORP·Filed 2008·Granted Sep 20, 2011·13 cites·10 claims
- 0386US7929321B2Depletion mode trench MOSFET for improved efficiency of DC/DC converter applicationsFORCE MOS TECHNOLOGY CORP·Filed 2008·Granted Apr 19, 2011·10 cites·20 claims
- 0485US7800185B2Closed trench MOSFET with floating trench rings as terminationFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Sep 21, 2010·12 cites·11 claims
- 0584US7863685B2Trench MOSFET with embedded junction barrier Schottky diodeFORCE MOS TECHNOLOGY CORP·Filed 2008·Granted Jan 4, 2011·11 cites·19 claims
- 0683US7812409B2Trench MOSFET with cell layout, ruggedness, truncated cornersFORCE MOS TECHNOLOGY CORP·Filed 2006·Granted Oct 12, 2010·10 cites·6 claims
- 0781US7646058B2Device configuration and method to manufacture trench MOSFET with solderable front metalFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Jan 12, 2010·10 cites·17 claims
- 0877US7750398B2Trench MOSFET with trench termination and manufacture thereofFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Jul 6, 2010·7 cites·5 claims
- 0977US7633121B2Trench MOSFET with implanted drift regionFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Dec 15, 2009·4 cites·13 claims
- 1052US2008246082A1Trenched mosfets with embedded schottky in the same cellFORCE MOS TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 1145US2010193835A1Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemesFORCE MOS TECHNOLOGY CORP·Filed 2009·Application pending·0 cites
- 1242US2009085107A1Trench MOSFET with thick bottom oxide tubFORCE MOS TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 1342US2009026533A1Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvementsFORCE MOS TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 1426US7960787B2Configuration of trenched semiconductor power device to reduce masked processFORCE MOS TECHNOLOGY CORP·Filed 2008·Granted Jun 14, 2011·0 cites·10 claims
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