Assignee
LIN CHRONG-JUNG
TW·11 granted patents·9 pending applications·19 citations·filing 2006–2014
Top patents by PatentIndex Score
20 records- 0181US8107274B2Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory deviceLIN CHRONG-JUNG·Filed 2009·Granted Jan 31, 2012·8 cites·12 claims
- 0278US9209225B2Cell structure of resistive non-volatile memory and manufacturing method thereofLIN CHRONG-JUNG·Filed 2014·Granted Dec 8, 2015·3 cites·22 claims
- 0368US9130166B2Resistive non-volatile memory, cell structure and manufacturing method thereofLIN CHRONG-JUNG·Filed 2014·Granted Sep 8, 2015·2 cites·18 claims
- 0468US8184486B2Tunable current driver and operating method thereofLIN CHRONG-JUNG·Filed 2008·Granted May 22, 2012·1 cites·14 claims
- 0567US8093649B2Flash memory cellLIN CHRONG-JUNG·Filed 2009·Granted Jan 10, 2012·3 cites·4 claims
- 0663US9117750B2Resistive element and memory cell of non-volatile memory and manufacturing method thereofLIN CHRONG-JUNG·Filed 2014·Granted Aug 25, 2015·1 cites·32 claims
- 0763US8547728B2Non-volatile memory device and methods for manufacturing the sameLIN CHRONG-JUNG·Filed 2011·Granted Oct 1, 2013·1 cites·7 claims
- 0850US2013126820A1Variable and reversible resistive memory storage element and memory storage module having the sameLIN CHRONG-JUNG·Filed 2012·Application pending·0 cites
- 0949US2007109872A1Single-poly non-volatile memory device and its operation methodLIN CHRONG-JUNG·Filed 2006·Application pending·0 cites
- 1049US2007108508A1Single-poly non-volatile memory deviceLIN CHRONG-JUNG·Filed 2006·Application pending·0 cites
- 1149US2007109860A1Single-poly non-volatile memory device and its operation methodLIN CHRONG-JUNG·Filed 2006·Application pending·0 cites
- 1247US9653469B2Memory array and non-volatile memory device of the sameLIN CHRONG-JUNG·Filed 2014·Granted May 16, 2017·0 cites·9 claims
- 1346US7903444B2One-time programmable memory and operating method thereofLIN CHRONG-JUNG·Filed 2008·Granted Mar 8, 2011·0 cites·20 claims
- 1446US2012099361A1Semiconductor capacitor, one time programmable memory cell and fabricating method and operating method thereofLIN CHRONG-JUNG·Filed 2011·Application pending·0 cites
- 1542US2015063038A1Memory cell, memory array and operation method thereofLIN CHRONG-JUNG·Filed 2014·Application pending·0 cites
- 1639US8837227B2Non-volatile semiconductor device, and method of operating the sameLIN CHRONG-JUNG·Filed 2012·Granted Sep 16, 2014·0 cites·7 claims
- 1739US2015200013A1Non-volatile memory and memory cell thereofLIN CHRONG-JUNG·Filed 2014·Application pending·0 cites
- 1836US2011210385A1Non-volatile Semiconductor Device, Programmable Memory, Capacitor and Metal Oxide SemiconductorLIN CHRONG-JUNG·Filed 2010·Application pending·0 cites
- 1935US8724398B2Non-volatile semiconductor device, and method of operating the sameLIN CHRONG-JUNG·Filed 2012·Granted May 13, 2014·0 cites·7 claims
- 2035US2011260292A1Bipolar Junction Transistor Having a Carrier Trapping LayerLIN CHRONG-JUNG·Filed 2010·Application pending·0 cites
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