Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therof

Abstract

A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate comprises multiple regions. Each of the regions on the patterned substrate is specifically tailored for adsorption of specific nucleic acid structure in the directed self-assembly.

What is claimed is: 
     
       1. A method of forming a nanostructure, the method comprising:
 forming a patterned semiconductive substrate comprising one or more regions, each of the one or more regions comprising one or more spacers, and each of the one or more spacers comprising functional groups tailored to adsorb a specific nucleic acid structure; 
 contacting the patterned semiconductive substrate with nucleic acid structures comprising the specific nucleic acid structures; and 
 selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate to form a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate. 
 
     
     
       2. The method of  claim 1 , wherein forming a patterned semiconductive substrate comprises patterning the semiconductive substrate to create the one or more regions formulated to exhibit chemical specificity to the specific nucleic acid structures. 
     
     
       3. The method of  claim 1 , wherein forming a patterned semiconductive substrate comprises patterning the semiconductive substrate to create the one or more regions configured to exhibit topological specificity to the specific nucleic acid structures. 
     
     
       4. The method of  claim 1 , wherein forming a patterned semiconductive substrate comprising one or more regions comprises patterning the semiconductive substrate to comprise regions corresponding in at least one of size or morphology to at least one of size or morphology of the specific nucleic acid structures. 
     
     
       5. The method of  claim 1 , wherein selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate comprises achieving a lowest energy configuration between adsorption of the specific nucleic acid structures to the one or more regions of the patterned semiconductive substrate. 
     
     
       6. The method of  claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate comprises forming the directed self-assembly comprising sublithographic openings in the nucleic acid structures. 
     
     
       7. The method of  claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate comprises forming the directed self-assembly comprising isotropic nucleic acid structures. 
     
     
       8. The method of  claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate comprises forming the directed self-assembly comprising sublithographic features at a sublithographic pitch on the patterned semiconductive substrate. 
     
     
       9. The method of  claim 8 , further comprising transferring the sublithographic features to the patterned semiconductive substrate. 
     
     
       10. The method of  claim 1 , wherein forming a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate comprises forming the directed self-assembly comprising anisotropic nucleic acid structures. 
     
     
       11. The method of  claim 10 , wherein forming the directed self-assembly comprising anisotropic nucleic acid structures comprises providing orientational control and sequential control during the adsorption of the anisotropic nucleic acid structures to the patterned semiconductive substrate. 
     
     
       12. The method of  claim 11 , wherein providing orientational control and sequential control during the adsorption of the anisotropic nucleic acid structures comprises forming the directed self-assembly of nucleic acid structures with minimum orientational and sequential errors. 
     
     
       13. The method of  claim 1 , further comprising using the directed self-assembly of nucleic acid structures as a mask. 
     
     
       14. The method of  claim 1 , wherein selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate comprises selectively adsorbing specific deoxyribonucleic acid structures to the respective one or more regions. 
     
     
       15. The method of  claim 1 , wherein selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate comprises selectively adsorbing specific ribonucleic acid structures to the respective one or more regions. 
     
     
       16. The method of  claim 1 , wherein selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate comprises chemically interacting the specific nucleic acid structures with the respective one or more regions. 
     
     
       17. A method of forming a nanostructure, the method comprising:
 forming a patterned semiconductive substrate comprising at least one region tailored to adsorb a specific nucleic acid structure, the specific nucleic acid structure formulated to exhibit at least one of topological specificity or chemical specificity to the at least one region; 
 contacting the a patterned semiconductive substrate with nucleic acid structures comprising the a specific nucleic acid structure, the patterned semiconductive substrate comprising at least one region, the at least one region comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to adsorb the specific nucleic acid structure, and the specific nucleic acid structure formulated to exhibit at least one of topological specificity or chemical specificity to the at least one region; 
 adsorbing the specific nucleic acid structure to the at least one region of the patterned semiconductive substrate to form a directed self-assembly of nucleic acid structures comprising sublithographic features on the patterned semiconductive substrate; and 
 transferring the sublithographic features to the patterned semiconductive substrate. 
 
     
     
       18. The method of  claim 17 , further comprising removing the directed self-assembly of nucleic acid structures. 
     
     
       19. A nanostructure comprising:
 a directed self-assembly of nucleic acid structures on a patterned semiconductive substrate, the patterned semiconductive substrate comprising regions and a specific nucleic acid structure of the directed self-assembly of nucleic acid structures selectively adsorbed to each of the regions of the patterned semiconductive substrate, each of the regions corresponding in at least one of size or morphology to at least one of size or morphology of the specific nucleic acid structure, and each of the regions comprising one or more spacers, each of the one or more spacers comprising functional groups. 
 
     
     
       20. A nanostructure comprising:
 a directed self-assembly of nucleic acid structures on a patterned semiconductive substrate, the patterned semiconductive substrate comprising regions and a specific nucleic acid structure of the directed self-assembly of nucleic acid structures selectively adsorbed to each of the regions of the patterned semiconductive substrate, each of the regions comprising one or more spacers, and each of the one or more spacers comprising functional groups formulated to exhibit chemical specificity to the specific nucleic acid structure. 
 
     
     
       21. The method of  claim 1 , wherein forming a patterned semiconductive substrate comprising one or more regions comprises forming the patterned semiconductive substrate comprising regions, each of the regions tailored to adsorb the same specific nucleic acid structure. 
     
     
       22. The method of  claim 1 , wherein forming a patterned semiconductive substrate comprising one or more regions comprises forming the patterned semiconductive substrate comprising regions, each of the regions tailored to adsorb a different specific nucleic acid structure. 
     
     
       23. The method of  claim 17 , wherein adsorbing the specific nucleic acid structure to the at least one region of the patterned semiconductive substrate comprises adsorbing the specific nucleic acid structure to the at least one region by chemical specificity. 
     
     
       24. The method of  claim 17 , wherein adsorbing the specific nucleic acid structure to the at least one region of the patterned semiconductive substrate comprises adsorbing the specific nucleic acid structure to the at least one region by topological specificity. 
     
     
       25. A method of forming a nanostructure, the method comprising:
 providing a patterned semiconductive substrate comprising one or more regions, each of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to adsorb a specific nucleic acid structure;   contacting the patterned semiconductive substrate with nucleic acid structures comprising the specific nucleic acid structures; and   selectively adsorbing the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate to form a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate.   
     
     
       26. A method of forming a nanostructure, the method comprising:
 contacting a patterned semiconductive substrate with nucleic acid structures comprising specific nucleic acid structures, the patterned semiconductive substrate comprising one or more regions, each of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to adsorb a specific nucleic acid structure of the specific nucleic acid structures; and   adsorbing the specific nucleic acid structure to each of the one or more regions of the patterned semiconductive substrate to form a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate.   
     
     
       27. A method of forming an assembly, the method comprising:
 forming a patterned semiconductive substrate comprising regions, each of the regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to couple with specific nucleic acid structures;   contacting the patterned semiconductive substrate with a mixture comprising the specific nucleic acid structures; and   coupling at least some of the specific nucleic acid structures to at least some of the regions to assemble a pattern of the specific nucleic acid structures on the patterned semiconductive substrate.   
     
     
       28. A method of forming an assembly, the method comprising:
 forming a patterned semiconductive substrate comprising regions, each of the regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to receive and retain specific nucleic acid structures;   contacting the patterned semiconductive substrate with a mixture comprising the specific nucleic acid structures; and   retaining at least some of the specific nucleic acid structures to at least some of the regions to assemble a distribution of the specific nucleic acid structures on the patterned semiconductive substrate.   
     
     
       29. A method of forming an assembly, the method comprising:
 forming a patterned silicon-containing substrate comprising regions, each of the regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to receive and retain nucleotide-containing structures;   contacting the patterned substrate with a mixture comprising the nucleotide-containing structures; and   retaining at least some of the nucleotide-containing structures to at least some of the regions to form a distribution of the nucleotide-containing structures on the substrate.   
     
     
       30. A method of forming a nanostructure, the method comprising:
 contacting (a) a patterned semiconductive substrate comprising one or more regions with (b) nucleic acid structures,   each region of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups configured to chemically interact with functional groups on the nucleic acid structures,   each nucleic acid structure of the nucleic acid structures comprising (i) a functional group and (ii) a specific nucleic acid structure capable of being adsorbed to the one or more regions of the patterned semiconductive substrate,   to allow selective adsorption of the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate, thereby forming the nanostructure.   
     
     
       31. The method of  claim 30 , wherein the nanostructure comprises a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate. 
     
     
       32. A method of forming a nanostructure, the method comprising:
 contacting a patterned semiconductive substrate with nucleic acid structures, the patterned semiconductive substrate comprising one or more regions, each of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to adsorb one or more nucleic acid structures,   each nucleic acid structure comprising (i) a functional group and (ii) a specific nucleic acid structure capable of being adsorbed to the one or more regions of the patterned semiconductive substrate,   to allow selective adsorption of the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate, thereby forming the nanostructure,   wherein the nanostructure comprises a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate.   
     
     
       33. The method of  claim 1 , wherein each nucleic acid structure further comprises a functional group. 
     
     
       34. The method of  claim 17 , wherein each nucleic acid structure further comprises a functional group. 
     
     
       35. The nanostructure of  claim 19 , wherein each nucleic acid structure further comprises a functional group. 
     
     
       36. The nanostructure of  claim 20 , wherein each nucleic acid structure further comprises a functional group. 
     
     
       37. A method of forming a nanostructure, the method comprising:
 contacting (a) a patterned semiconductive substrate comprising one or more regions with (b) nucleic acid structures,   each region of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups configured to chemically interact with the nucleic acid structures,   each nucleic acid structure comprising (i) a functional group and (ii) a specific nucleic acid structure formulated to be adsorbed to the one or more regions of the patterned semiconductive substrate,   to allow selective adsorption of the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate to form the nanostructure.   
     
     
       38. A method of forming a nanostructure, the method comprising:
 contacting a patterned semiconductive substrate with nucleic acid structures, the patterned semiconductive substrate comprising one or more regions, each of the one or more regions comprising one or more spacers, each of the one or more spacers comprising functional groups tailored to adsorb nucleic acid structures,   each nucleic acid structure comprising (i) a functional group and (ii) a specific nucleic acid structure formulated to be adsorbed to the one or more regions of the patterned semiconductive substrate,   to allow selective adsorption of the specific nucleic acid structures to the respective one or more regions of the patterned semiconductive substrate to form the nanostructure,   wherein the nanostructure comprises a directed self-assembly of nucleic acid structures on the patterned semiconductive substrate.