Solid state imaging device and manufacturing method, and electronic apparatus

Abstract

A solid state imaging device includes a substrate, in which the substrate includes a photoelectric conversion unit that generates a charge according to a light amount of incident light by a pixel unit, an accumulation unit that divides the charge of the pixel unit which is generated in the photoelectric conversion unit and accumulates the charge, a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the pixel unit, and a second element isolation unit that is formed at a boundary of the accumulation unit of a divided unit of the pixel.

What is claimed is: 
     
       1. An imaging device comprising:
 a plurality of pixels, wherein at least one pixel of the plurality of pixels includes including:
 a photoelectric conversion unit region disposed in a substrate and that generates a charges for the at least one pixel according to an amount of incident light, 
 a plurality of accumulation units regions that divides the charge of the at least one pixel generated in the photoelectric conversion unit and photoelectric conversion region such that each accumulation region accumulates a portion of the divided charges, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel, 
 an on-chip lens including a convex portion that passes the incident light, the convex portion covering at least part of each accumulation region,  
 a first isolation element isolation unit that is formed at a boundary of the photoelectric conversion unit of the at least one pixel and region so as to be between a the photoelectric conversion unit of region and an adjacent pixel, and 
 a second isolation element isolation unit that is formed between each accumulation unit region of the plurality of accumulation units regions of the at least one pixeland between another accumulation unit of an adjacent pixel, wherein the first isolation element and the second isolation element are formed to different depths in the substrate. 
 
 
     
     
       2. The imaging device according to  claim 1 ,
 wherein the photoelectric conversion unit is formed on a side of a substrate which is irradiated with the incident light, and   the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.   
     
     
       3. The imaging device according to  claim 1 , further comprising a light shielding unit that is arranged on a substrate of the first element isolation unit to shield the incident light. 
     
     
       4. The imaging device according to  claim 1 , wherein a color filter is arranged on a substrate of the photoelectric conversion unit. 
     
     
       5. The imaging device according to  claim 1 , further comprising a lens that is arranged on a substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       6. The imaging device of  claim 1 , wherein the plurality of accumulation units is located between the photoelectric conversion unit and a surface side of a substrate containing the at least one pixel. 
     
     
       7. A method of manufacturing an imaging device, comprising:
 forming, on a substrate, a photoelectric conversion unit that generates a charge for a pixel according to an amount of incident light;   forming, on the substrate, a plurality of accumulation units that divides the charge of the pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the pixel;   forming, on the substrate, a first element isolation unit at a boundary of the photoelectric conversion unit of the pixel and between a photoelectric conversion unit of an adjacent pixel; and   forming, on the substrate, a second element isolation unit between each accumulation unit of the plurality of accumulation units of the pixel and between another accumulation unit of an adjacent pixel.   
     
     
       8. The method of manufacturing according to  claim 7 , further comprising:
 forming the photoelectric conversion unit on a side which is irradiated with the incident light, and   forming the first element isolation unit on the side which is irradiated with the incident light.   
     
     
       9. The manufacturing method according to  claim 7 , further comprising forming a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light. 
     
     
       10. The manufacturing method according to  claim 7 , further comprising forming a color filter on the substrate of the photoelectric conversion unit. 
     
     
       11. The manufacturing method according to  claim 7 , further comprising forming a lens on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       12. An electronic apparatus comprising:
 a substrate including a plurality of pixels, wherein at least one pixel of the plurality of pixels includes:
 a photoelectric conversion unit that generates a charge for the at least one pixel according to an amount of incident light, 
 a plurality of accumulation units that divides the charge of the at least one pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel, 
 a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the at least one pixel and between a photoelectric conversion unit of an adjacent pixel, and 
 a second element isolation unit that is formed between each accumulation unit of the plurality of accumulation units of the at least one pixel and between another accumulation unit of an adjacent pixel. 
   
     
     
       13. The electronic apparatus according to  claim 12 ,
 wherein the photoelectric conversion unit is formed on a side of the substrate which is irradiated with the incident light, and   the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.   
     
     
       14. The electronic apparatus according to  claim 12 , further comprising a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light. 
     
     
       15. The electronic apparatus according to  claim 12 , further comprising a color filter arranged on the substrate of the photoelectric conversion unit. 
     
     
       16. The electronic apparatus according to  claim 12 , further comprising a lens that is arranged on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       17. A back side irradiation type imaging device comprising:
 a first pixel comprising:
 a first divided pixel and a second divided pixel; 
 a first isolation region disposed between the first divided pixel and the second divided pixel; 
 a first on-chip lens corresponding to the first pixel; and 
 a first color filter corresponding to the first pixel; and 
   a second pixel disposed adjacent to the first pixel, the second pixel comprising:
 a second on-chip lens corresponding to the second pixel; and 
 a second color filter corresponding to the second pixel; and 
   a second isolation region disposed between the first pixel and the second pixel,
 wherein a length of the first isolation region is different from a length of the second isolation region, and 
 wherein the length of the first isolation region and the length of the second isolation region are in a depth direction of a semiconductor substrate.  
   
     
     
       18. The back side irradiation type imaging device according to claim 17, wherein the depth direction of the semiconductor substrate is perpendicular to a first surface of the semiconductor substrate.  
     
     
       19. The back side irradiation type imaging device according to claim 17, wherein the length of the first isolation region is smaller than the length of the second isolation region.  
     
     
       20. The back side irradiation type imaging device according to claim 17, wherein the first isolation region comprises a first end and a second end in the depth direction of the semiconductor substrate, wherein the first end is disposed between a first surface of the semiconductor substrate and a second surface of the semiconductor substrate, the second surface being opposite the first surface.  
     
     
       21. The back side irradiation type imaging device according to claim 20, wherein the second end is disposed at the first surface of the semiconductor substrate.  
     
     
       22. The back side irradiation type imaging device according to claim 21, wherein the first surface of the semiconductor substrate is opposite a light incident side of the semiconductor substrate.  
     
     
       23. The back side irradiation type imaging device according to claim 17, wherein the second isolation region comprises a first end and a second end in the depth direction of the semiconductor substrate, wherein the first end is disposed at a first surface of the semiconductor substrate.  
     
     
       24. The back side irradiation type imaging device according to claim 23, wherein the second end is disposed at a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being opposite the first surface of the semiconductor substrate.  
     
     
       25. The back side irradiation type imaging device according to claim 17, wherein the first isolation region comprises an impurity.  
     
     
       26. The back side irradiation type imaging device according to claim 17, wherein the second isolation region comprises an impurity.  
     
     
       27. The back side irradiation type imaging device according to claim 17, further comprising a light shield disposed between the first pixel and the second pixel and disposed above a first surface of the semiconductor substrate, the first surface being a light incident side of the semiconductor substrate.  
     
     
       28. The back side irradiation type imaging device according to claim 17, wherein the second pixel comprises:
 a third divided pixel and a fourth divided pixel; and   a third isolation region disposed between the third divided pixel and the fourth divided pixel.    
     
     
       29. The back side irradiation type imaging device according to claim 28, wherein a length of the third isolation region is different from the length of the second isolation region and wherein the length of the third isolation region is in the depth direction of the semiconductor substrate.  
     
     
       30. The back side irradiation type imaging device according to claim 17, wherein the first color filter bandpasses first light and wherein the second color filter bandpasses second light which is different from the first light.  
     
     
       31. The back side irradiation type imaging device according to claim 17, wherein the first color filter bandpasses green light.  
     
     
       32. The back side irradiation type imaging device according to claim 31, wherein the second color filter bandpasses blue light or red light.  
     
     
       33. The back side irradiation type imaging device according to claim 17, wherein the first color filter bandpasses blue light.  
     
     
       34. The back side irradiation type imaging device according to claim 17, wherein the first color filter bandpasses red light.  
     
     
       35. The back side irradiation type imaging device according to claim 17, wherein the first pixel further comprises a third divided pixel and a fourth divided pixel.  
     
     
       36. The back side irradiation type imaging device according to claim 35, wherein the first pixel further comprises third, fourth, and fifth isolation regions disposed between the first divided pixel and the third divided pixel, the third divided pixel and the fourth divided pixel, and the second divided pixel and the fourth divided pixel, respectively.  
     
     
       37. An imaging apparatus comprising:
 an optical unit   the back side irradiation type imaging device according to claim 17;   a digital signal processing circuit; and   a display unit.