Semiconductor light emitting device

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

What is claimed is: 
     
       1. A semiconductor light emitting device comprising:
 a light emitting structure having:
 a first conductive semiconductor layer; 
 a second conductive semiconductor layer above the first conductive semiconductor layer; 
 an active layer between the first and second conductive semiconductor layer; 
 an insulating layer on an upper surface of the second conductive semiconductor layer; 
 an electrode layer on the upper surface of the second conductive semiconductor layer; 
 a metal layer on the electrode layer; and 
 an upper metal layer on a top surface of the metal layer, 
   wherein the insulating layer includes a first region on the upper surface of the second conductive semiconductor layer, a second region on the upper surface of the second conductive semiconductor layer spaced apart from the first region, a first protrusion protruded from the first region, and a second protrusion protruded from the second region,   wherein the first and second protrusions extend from the upper surface of the second conductive semiconductor layer to at least an upper portion of the first conductive semiconductor layer so as to be spaced apart in the light emitting structure,   wherein the electrode layer is disposed between the first region and the second region of the insulating layer,   wherein a first portion of the second conductive semiconductor layer is disposed between the first and second protrusions,   wherein a first portion of the active layer is disposed between the first and second protrusions,   wherein the first protrusion includes a first inclined surface contacting the first portion of the second conductive semiconductor layer and the first portion of the active layer,   wherein the second protrusion includes a second inclined surface contacting the first portion of the second conductive semiconductor layer and the active layer,   wherein an interval between the first and second inclined surfaces is greater than an interval between the first and second regions,   wherein bottom surfaces of the first protrusion and the second protrusion are vertically overlapped with a bottom surface of the first conductive semiconductor layer,   wherein bottom portions of the first protrusion and the second protrusion are disposed in the first conductive semiconductor layer and are located at a lower position than a top surface of the first conductive semiconductor layer,   wherein the metal layer is disposed between the electrode layer and the upper metal layer,   wherein an entire bottom surface of the electrode layer is located at a higher position than a bottom surface of the second conductive semiconductor layer,   wherein a center portion of a bottom surface of the electrode layer is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer,   wherein the electrode layer disposed between the first region and the second region of the insulating layer contacts the second conductive semiconductor layer,   wherein the metal layer contacts the electrode layer,   wherein the metal layer is electrically connected to the electrode layer,   wherein the bottom portions of the first and second protrusions disposed in the first conductive semiconductor layer are not overlapped with an entire region of the metal layer in a vertical direction, and   wherein the entire region of the metal layer is overlapped with the bottom surface of the first conductive semiconductor layer in the vertical direction.   
     
     
       2. The semiconductor light emitting device of  claim 1 , wherein the electrode layer is formed of a reflective layer,
 wherein a top surface of the first region and a top surface of the second region of the insulating layer are located at a higher position than a top surface of the electrode layer which is disposed between the first region and the second region of the insulating layer,   wherein the first and second protrusions disposed in the light emitting structure are not overlapped with the entire region of the metal layer in the vertical direction, and   wherein the entire region of the metal layer is overlapped with the upper metal layer in the vertical direction.   
     
     
       3. The semiconductor light emitting device of  claim 1 , wherein the electrode layer is formed of an Ag layer. 
     
     
       4. The semiconductor light emitting device of  claim 1 , wherein the metal layer is formed of W material. 
     
     
       5. The semiconductor light emitting device of  claim 1 , wherein the metal layer has a thickness that is greater than a thickness of the electrode layer in the vertical direction, and
 wherein the entire region of the metal layer is overlapped with the upper metal layer in the vertical direction.   
     
     
       6. The semiconductor light emitting device of  claim 5 , wherein the thickness of the metal layer is about 1 μm to about 10 μm. 
     
     
       7. The semiconductor light emitting device of  claim 5 , further comprising a first electrode electrically connected to the first conductive semiconductor layer,
 wherein the first conductive semiconductor layer is formed of an n-type semiconductor,   wherein the first and second protrusions disposed in the light emitting structure are not overlapped with the entire region of the metal layer in the vertical direction, and   wherein the entire region of the metal layer is overlapped with the upper metal layer in the vertical direction.   
     
     
       8. The semiconductor light emitting device of  claim 7 , wherein the first electrode comprises Al, Ni and Ti. 
     
     
       9. The semiconductor light emitting device of  claim 4 , wherein the insulating layer is formed of a silicon nitride material. 
     
     
       10. The semiconductor light emitting device of  claim 9 , wherein the insulating layer has a thickness of about 2 μm or less. 
     
     
       11. The semiconductor light emitting device of  claim 9 , wherein the first protrusion is disposed within a range of about 1 μm to about 5 μm from a first lateral surface of the light emitting structure. 
     
     
       12. The semiconductor light emitting device of  claim 11 , wherein the second protrusion is disposed within a range of about 1 μm to about 5 μm from a second lateral surface of the light emitting structure, and
 wherein the first lateral surface is opposite to the second lateral surface based on the light emitting structure. 
 
     
     
       13. The semiconductor light emitting device of  claim 1 , wherein an angle between the first inclined surface of the first protrusion and the upper surface of the second conductive semiconductor layer is an obtuse angle. 
     
     
       14. The semiconductor light emitting device of  claim 13 , wherein an angle between the second inclined surface of the second protrusion and the upper surface of the second conductive semiconductor layer is an obtuse angle. 
     
     
       15. The semiconductor light emitting device of  claim 13 , wherein a second portion of the second conductive semiconductor layer overlapped with the first and second regions have different electrical characteristics than the first portion of the second conductive semiconductor layer. 
     
     
       16. The semiconductor light emitting device of  claim 1 , wherein a space between the first and second regions is free of the insulating layer. 
     
     
       17. The semiconductor light emitting device of  claim 1 , wherein the first and second protrusions extend into the upper portion of the first conductive semiconductor layer,
 wherein the bottom surfaces of the first protrusion and the second protrusion directly contact an inner region of the first conductive semiconductor layer, and   wherein the first and second protrusions disposed in the light emitting structure are not overlapped with the entire region of the metal layer in the vertical direction.   
     
     
       18. The semiconductor light emitting device of  claim 1 , wherein
 the upper metal layer includes Au on the metal layer.   
     
     
       19. The semiconductor light emitting device of  claim 18 , wherein the upper metal layer has a protrusion portion, and
 wherein a thickness of the upper metal layer is about 30 μm to about 150 μm.   
     
     
       20. The semiconductor light emitting device of  claim 1 , further comprising a plurality of patterns disposed on the second conductive semiconductor layer. 
     
     
       21. A semiconductor light emitting device comprising:
 a conductive support member;   a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;   an electrode disposed between the light emitting structure and the conductive support member; and   an insulation layer disposed between the light emitting structure and the conductive support member,   wherein the insulation layer includes a protrusion passing through the second conductive semiconductor layer and the active layer so as to be in contact with the first conductive semiconductor layer,   wherein the protrusion separates the light emitting structure into an active region and a non-active region,   wherein the electrode is electrically connected to the second conductive semiconductor layer in the active region,   wherein the electrode is electrically disconnected to the second conductive semiconductor layer in the non-active region,   wherein the second conductive semiconductor layer in the non-active region vertically overlaps with the electrode,   wherein an entire bottom surface of the electrode is located at a higher position than a bottom surface of the second conductive semiconductor layer, and   wherein a center portion of a bottom surface of the electrode is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer.   
     
     
       22. The semiconductor light emitting device of claim 21, wherein the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer provided in the active region are normally operated, and the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer provided in the non-active region are abnormally operated. 
     
     
       23. The semiconductor light emitting device of claim 21, wherein the first conductive semiconductor layer provided in the non-active region is partially used as a current path. 
     
     
       24. The semiconductor light emitting device of claim 21, wherein the protrusion of the insulation layer continuously extends along the light emitting structure. 
     
     
       25. The semiconductor light emitting device of claim 24, wherein the protrusion of the insulation layer has a closed loop shape. 
     
     
       26. The semiconductor light emitting device of claim 25, wherein the protrusion of the insulation layer has a band shape, a ring shape, or a frame shape. 
     
     
       27. The semiconductor light emitting device of claim 21, wherein the non-active region of the active layer surrounds the protrusion. 
     
     
       28. The semiconductor light emitting device of claim 21, wherein the electrode includes an ohmic-contact layer, and
 wherein the ohmic-contact layer includes at least one at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Pt, Ni, Au, Rh and Pd.   
     
     
       29. The semiconductor light emitting device of claim 28, wherein the electrode further comprises a reflective layer, and
 wherein the reflective layer includes at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or Hf.   
     
     
       30. The semiconductor light emitting device of claim 28, wherein the electrode further comprises an adhesion layer, and the adhesion layer includes at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. 
     
     
       31. The semiconductor light emitting device of claim 28, wherein the ohmic-contact layer includes a plurality of patterns. 
     
     
       32. The semiconductor light emitting device of claim 21, wherein the first conductive semiconductor layer and the second conductive semiconductor layer includes an AlGaN-based semiconductor. 
     
     
       33. The semiconductor light emitting device of claim 21, wherein the insulation layer includes at least one selected from the group consisting of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 . 
     
     
       34. The semiconductor light emitting device of claim 21, wherein the insulation layer has a thickness of 2 μm or less. 
     
     
       35. The semiconductor light emitting device of claim 21, further comprising a shock supporting member between the electrode and the conductive support member. 
     
     
       36. The semiconductor light emitting device of claim 21, further comprising a pad electrically connected with the first conductive semiconductor layer. 
     
     
       37. The semiconductor light emitting device of claim 36, wherein the pad is disposed on the first conductive semiconductor layer. 
     
     
       38. The semiconductor light emitting device of claim 21, wherein a surface of the first conductive semiconductor layer opposite to the electrode has an uneven surface. 
     
     
       39. A semiconductor light emitting device comprising:
 a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and   an electrode electrically connected to the light emitting structure,   wherein the light emitting structure includes an active region, and a non-active region,   wherein the second conductive semiconductor layer in the non-active region is separated from the second conductive semiconductor layer in the active region,   wherein the electrode includes a contact portion electrically connected to the active region, and an extended portion extended from the contact portion to an outermost side surface of the light emitting structure,   wherein the extended portion is electrically disconnected to the second conductive semiconductor layer in the non-active region,   wherein the extended portion overlaps with the non-active region vertically,   wherein an entire bottom surface of the electrode is located at a higher position than a bottom surface of the second conductive semiconductor layer, and   wherein a center portion of a bottom surface of the electrode is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer.   
     
     
       40. The semiconductor light emitting device of claim 39, wherein a groove separates the active layer and the second conductive semiconductor layer into an active region and a non-active region. 
     
     
       41. The semiconductor light emitting device of claim 40, wherein the groove continuously extends along the light emitting structure. 
     
     
       42. The semiconductor light emitting device of claim 41, wherein the groove has a closed loop shape. 
     
     
       43. The semiconductor light emitting device of claim 42, wherein the groove has a band shape, a ring shape, or a frame shape. 
     
     
       44. The semiconductor light emitting device of claim 40, wherein the non-active region of the active layer surrounds the groove.