Semiconductor component and method for contacting said semiconductor component

Abstract

The semiconductor component has several regularly arranged active cells (1), each comprising at least one main defining line (8). A bonding wire (18, 20) is fixed to at least one bonding surface (14, 16) by bonding with a bonding tool, oscillating in a main oscillation direction (22, 24), for external electrical contacting. The bonding surfaces (14, 16) are of such a size and oriented such that the main oscillation direction (22, 24) runs at an angle (α), with a difference of 90° to the main defining line (8).

I claim: 
     
       1. A semiconductor component comprising:
 a plurality of regularly arranged active cells, each of the active cell cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, each of the active cells having at least one main boundary line that lies substantially parallel to an outer edge of the semiconductor component, the main boundary line extending parallel to a longitudinal direction of the active cells, and 
 at least one bonding area arranged to be at a top side and in electrical contact with at least one of said active cells, on which at least one bonding wire is fixed by bonding by means of a bonding tool oscillating in a main oscillation direction, the at least one bonding wire, bonded to the at least one bonding area, extends lengthwise in a bonding direction along the at least one bonding area, the at least one bonding area being dimensioned and oriented such that the main oscillation direction a lengthwise boundary line of the at least one bonding area is parallel to the bonding direction of the at least one bonding wire, and the lengthwise boundary line of the at least one bonding area is set at an angle that is different from 90° with respect to the main boundary line; 
 wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of 0° to about 45° with respect to the main boundary line that extends parallel to the longitudinal direction of the active cells. 
 
     
     
       2. The semiconductor component as claimed in  claim 1 , wherein it being possible for the main oscillation direction to be set the lengthwise boundary line of the at least one bonding area is parallel to the main boundary line. 
     
     
       3. The semiconductor component as claimed in  claim 1 , wherein the main boundary line lying parallel to an outer edge of the semiconductor component. 
     
     
       4. The semiconductor component as claimed in  claim 1 , wherein the active cells being embodied in strip form. 
     
     
       5. The semiconductor component as claimed in  claim 1 , wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90° with respect to the large rhombus diagonal. 
     
     
       6. The semiconductor component as claimed in  claim 5 , wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal. 
     
     
       7. A semiconductor component comprising:
 a plurality of regularly two-dimensionally arranged active cells, each of the active cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, and each active cell having at least one main boundary line, and 
 at least one bonding area arranged to be at a top side and in electrical contact with at least one of said active cells, on which at least one bonding wire is fixed by bonding by means of a bonding tool oscillating in a main oscillation direction such that the at least one bonding wire, bonded to the at least one bonding area, extends lengthwise in a bonding direction along the at least one bonding area, the at least one bonding area being dimensioned and oriented such that the main oscillation direction a longitudinal side of the at least one bonding area is parallel to the bonding direction of the at least one bonding wire, and the longitudinal side of the at least one bonding area is set at an angle that is different from 90° with respect to the main boundary lines; 
 wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through about 45° relative to a rectangular outer contour of the semiconductor component, and the at least one bonding area being embodied in rectangular fashion and running with the longitudinal side parallel to an outer edge of the outer contour. 
 
     
     
       8. The semiconductor component as claimed in  claim 7 , wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through 45° relative to a rectangular outer contour of the semiconductor component, and the bonding area being embodied in rectangular fashion and running with its longer rectangle side parallel to an outer edge of the outer contour. 
     
     
       9. The semiconductor component as claimed in  claim 7 , wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90° with respect to the large rhombus diagonal. 
     
     
       10. The semiconductor component as claimed in  claim 9 , wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal. 
     
     
       11. A semiconductor component comprising:
 a plurality of regularly arranged active cells, each of the active cell cells being embodied in strip form having a rectangular stripe shape and being separated by a rectangular stripe of semiconductor body, each of the active cells having at least one main boundary line that lies substantially parallel to an outer edge of the semiconductor component, the main boundary line extending parallel to the longitudinal direction of the active cells, wherein the at least one active cell is sensitive to force components acting transversely to said at least one main boundary line during wire bonding, and 
 at least one metallic bonding area arranged to be at a top side and in electrical contact with at least one of said active cells, on which at least one bonding wire is bonded by means of a bonding tool oscillating in a main oscillation direction, the at least one bonding wire, bonded to the at least one metallic bonding area, extends lengthwise in a bonding direction along the at least one metallic bonding area, the at least one metallic bonding area being dimensioned and oriented such that the main oscillation direction a lengthwise boundary line of the at least one metallic bonding area is parallel to the bonding direction of the at least one boding wire, and the lengthwise boundary line of the at least one bonding area is set at an angle that is substantially different from 90° with respect to the main boundary line that extends parallel to the longitudinal direction of the active cells, the angle being configured to substantially reduce a force component that acts transversely to the main boundary line. 
 
     
     
       12. The semiconductor component as claimed in  claim 11 , wherein it being possible for the main oscillation direction to be set the lengthwise boundary line of the at least one bonding area is parallel to the main boundary line. 
     
     
       13. The semiconductor component as claimed in  claim 11 , wherein the main boundary line lying is parallel to an outer edge of the semiconductor component. 
     
     
       14. The semiconductor component as claimed in  claim 11 , wherein the active cells being embodied in strip form. 
     
     
       15. The semiconductor component as claimed in  claim 11 , wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90° with respect to the large rhombus diagonal. 
     
     
       16. The semiconductor component as claimed in  claim 15 , wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal. 
     
     
       17. A semiconductor component comprising:
 a plurality of regularly two-dimensionally arranged active cells, which have at least first and second main boundary lines, wherein the active cell is sensitive to force components acting transversely to said first and second main boundary line during wire bonding, and   at least one metallic bonding area arranged to be in electrical contact with at least one of said active cells, on which at least one bonding wire is bonded by means of a bonding tool oscillating in a main oscillation direction, the bonding area being dimensioned and oriented such that the main oscillation direction is set at an angle that is different from 90° with respect to the first and second main boundary lines.   
     
     
       18. The semiconductor component as claimed in  claim 17 , wherein the active cells being embodied in rectangular fashion and being arranged in a manner rotated through 45° relative to a rectangular outer contour of the semiconductor component, and the bonding area being embodied in rectangular fashion and running with its longer rectangle side parallel to an outer edge of the outer contour. 
     
     
       19. The semiconductor component as claimed in  claim 17 , wherein the active cells being embodied in rhomboid fashion, and the bonding area being dimensioned and oriented such that the main oscillation direction can be set at an angle that differs from 90° with respect to the large rhombus diagonal. 
     
     
       20. The semiconductor component as claimed in  claim 19 , wherein the bonding area being dimensioned and oriented such that the main oscillation direction can be set parallel to the large rhombus diagonal. 
     
     
       21. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45° with respect to the main boundary line. 
     
     
       22. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° with respect to the main boundary line. 
     
     
       23. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° to about 45° with respect to the main boundary line. 
     
     
       24. The semiconductor component as claimed in claim 1, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° or less with respect to the main boundary line. 
     
     
       25. The semiconductor component as claimed in claim 1, wherein an end region of the least one bonding wire extends in the bonding direction. 
     
     
       26. The semiconductor component as claimed in claim 1, wherein the lengthwise boundary line of the at least one bonding area extends across multiple active cells. 
     
     
       27. The semiconductor component as claimed in claim 7, wherein the longitudinal side of the at least one bonding area extends across multiple active cells. 
     
     
       28. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45° with respect to the main boundary line. 
     
     
       29. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° with respect to the main boundary line. 
     
     
       30. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° to about 60° with respect to the main boundary line. 
     
     
       31. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° to about 45° with respect to the main boundary line. 
     
     
       32. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 45° or less with respect to the main boundary line. 
     
     
       33. The semiconductor component as claimed in claim 11, wherein the at least one bonding area is dimensioned and oriented such that the lengthwise boundary line of the at least one bonding area is at an angle of about 30° or less with respect to the main boundary line. 
     
     
       34. The semiconductor component as claimed in claim 11, wherein the angle is set such that the force component that acts transversely to the main boundary line is reduced by about 50% or more. 
     
     
       35. The semiconductor component as claimed in claim 11, wherein the angle is set such that the force component that acts transversely to the main boundary line is at least about 50% less than another force component that results from the lengthwise boundary line of the at least one bonding area being set at 90° with respect to the main boundary line. 
     
     
       36. The semiconductor component as claimed in claim 11, wherein the lengthwise boundary line of the at least one metallic bonding area extends across multiple active cells.