Solid state imaging device and manufacturing method, and electronic apparatus

Abstract

A solid state imaging device includes a substrate, in which the substrate includes a photoelectric conversion unit that generates a charge according to a light amount of incident light by a pixel unit, an accumulation unit that divides the charge of the pixel unit which is generated in the photoelectric conversion unit and accumulates the charge, a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the pixel unit, and a second element isolation unit that is formed at a boundary of the accumulation unit of a divided unit of the pixel.

What is claimed is: 
     
       1. An imaging device comprising:
 a plurality of pixels, wherein at least one pixel of the plurality of pixels includes including: 
 a photoelectric conversion unit that generates a charge for the at least one pixel according to an amount of incident light, 
 a plurality of accumulation units that divides the charge of the at least one pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel, 
 a first element isolation unit that is formed at a boundary of between the photoelectric conversion unit of the at least one pixel and between a photoelectric conversion unit of an adjacent pixel, and 
 a second element isolation unit that is formed between each accumulation unit of the plurality of accumulation units of the at least one pixel and between another accumulation unit of an adjacent pixel, wherein a length of the first element isolation unit is greater than a length of the second element isolation unit. 
 
     
     
       2. The imaging device according to  claim 1 ,
 wherein the photoelectric conversion unit is formed on a side of a substrate which is irradiated with the incident light, and   the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.   
     
     
       3. The imaging device according to  claim 1 , further comprising a light shielding unit that is arranged on a substrate of the first element isolation unit to shield the incident light. 
     
     
       4. The imaging device according to  claim 1 , wherein a color filter is arranged on a substrate of the photoelectric conversion unit. 
     
     
       5. The imaging device according to  claim 1 , further comprising a lens that is arranged on a substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       6. The imaging device of  claim 1 , wherein the plurality of accumulation units is located between the photoelectric conversion unit and a surface side of a substrate containing the at least one pixel. 
     
     
       7. A method of manufacturing an imaging device, comprising:
 forming, on a substrate, a photoelectric conversion unit that generates a charge for a pixel according to an amount of incident light;   forming, on the substrate, a plurality of accumulation units that divides the charge of the pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the pixel;   forming, on the substrate, a first element isolation unit at a boundary of the photoelectric conversion unit of the pixel and between a photoelectric conversion unit of an adjacent pixel; and   forming, on the substrate, a second element isolation unit between each accumulation unit of the plurality of accumulation units of the pixel and between another accumulation unit of an adjacent pixel.   
     
     
       8. The method of manufacturing according to  claim 7 , further comprising:
 forming the photoelectric conversion unit on a side which is irradiated with the incident light, and   forming the first element isolation unit on the side which is irradiated with the incident light.   
     
     
       9. The manufacturing method according to  claim 7 , further comprising forming a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light. 
     
     
       10. The manufacturing method according to  claim 7 , further comprising forming a color filter on the substrate of the photoelectric conversion unit. 
     
     
       11. The manufacturing method according to  claim 7 , further comprising forming a lens on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       12. An electronic apparatus comprising:
 a substrate including a plurality of pixels, wherein at least one pixel of the plurality of pixels includes:
 a photoelectric conversion unit that generates a charge for the at least one pixel according to an amount of incident light, 
 a plurality of accumulation units that divides the charge of the at least one pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel, 
 a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the at least one pixel and between a photoelectric conversion unit of an adjacent pixel, and 
 a second element isolation unit that is formed between each accumulation unit of the plurality of accumulation units of the at least one pixel and between another accumulation unit of an adjacent pixel. 
   
     
     
       13. The electronic apparatus according to  claim 12 ,
 wherein the photoelectric conversion unit is formed on a side of the substrate which is irradiated with the incident light, and   the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.   
     
     
       14. The electronic apparatus according to  claim 12 , further comprising a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light. 
     
     
       15. The electronic apparatus according to  claim 12 , further comprising a color filter arranged on the substrate of the photoelectric conversion unit. 
     
     
       16. The electronic apparatus according to  claim 12 , further comprising a lens that is arranged on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit. 
     
     
       17. A back side irradiation type imaging device comprising:
 a substrate having a first side as a light incident side and a second side opposite to the first side;   a plurality of pixels disposed in the substrate and including a first pixel and a second pixel disposed adjacent to the first pixel in a cross-section view;   a plurality of dividing regions disposed in the substrate and including a first dividing region, a second dividing region and a third dividing region; and   a color filter disposed over the first side of the substrate and including a first color filter corresponding to a first color and a second filter corresponding to a second color different from the first color,   wherein, in the cross-section view,   the first pixel includes a first divided pixel and a second divided pixel divided by the first dividing region,   the second pixel includes a third divided pixel and a fourth divided pixel divided by the second dividing region,   the first pixel and the second pixel are divided by the third dividing region,   the first color filter is disposed over, at least in part, the first divided pixel and the second divided pixel,   the second color filter is disposed over, at least in part, the third divided pixel and the fourth divided pixel, and   a length of the first dividing region is different from a length the third dividing region.   
     
     
       18. The backside irradiation type imaging device according to claim 17, further comprising a first lens and a second lens, wherein,
 the first lens is disposed over the first color filter, the first divided pixel and the second divided pixel, and   the second lens is disposed over the second color filter, the third divided pixel and the fourth divided pixel.   
     
     
       19. The backside irradiation type imaging device according to claim 18, further comprising a light shielding unit disposed at a boundary of the first color filter and the second color filter. 
     
     
       20. The backside irradiation type imaging device according to claim 19, wherein
 the first pixel includes a fifth divided pixel and a sixth divided pixel, and   the first divided pixel, the second divided pixel, the fifth divided pixel and the sixth divided pixel are divided by the first dividing region.   
     
     
       21. The backside irradiation type imaging device according to claim 20, wherein the first color green and the second color is blue or red. 
     
     
       22. The backside irradiation type imaging device according to claim 21, wherein the plurality of the dividing regions extend from the second side of the substrate to the first side of the substrate. 
     
     
       23. The backside irradiation type imaging device according to claim 17, wherein the plurality of the dividing regions extend from the second side of the substrate to the first side of the substrate. 
     
     
       24. The backside irradiation type imaging device according to claim 17, wherein each pixel of the plurality of pixels includes an accumulation unit and photoelectric conversion unit. 
     
     
       25. The backside irradiation type imaging device according to claim 17, further comprising a pixel array unit including the plurality of the pixels; and
 a signal processing circuit coupled to the pixel array unit,   wherein, the signal processing circuit receives a pixel signal from the pixel array unit and performs analog-to-digital conversion processing with the pixel signal.   
     
     
       26. The backside irradiation type imaging device according to claim 25, further comprising a drive unit that sends a control signal to the pixel array unit such that the pixel array unit outputs the pixel signal. 
     
     
       27. The backside irradiation type imaging device according to claim 26, further comprising a system control unit that controls at least the signal processing circuit and the drive unit. 
     
     
       28. The backside irradiation type imaging device according to claim 27, further comprising a signal processing unit coupled to the signal processing circuit, wherein the signal processing circuit receives a digital signal from the signal processing unit and processes the digital signal. 
     
     
       29. The backside irradiation type imaging device according to claim 17, wherein the first dividing region includes a first impurity region and the second dividing region includes a second impurity region. 
     
     
       30. The backside irradiation type imaging device according to claim 29, wherein the third dividing region includes a third impurity region. 
     
     
       31. The backside irradiation type imaging device according to claim 17, wherein the plurality of dividing regions are formed from the first side of the substrate. 
     
     
       32. The backside irradiation type imaging device according to claim 17, wherein the plurality of dividing regions are in a lattice shape in a plan view.