USRE46729EActiveUtility

Solid-state imaging device and electronic apparatus having a light blocking part

Assignee: SONY CORPPriority: Feb 23, 2009Filed: Jul 22, 2015Granted: Feb 20, 2018
Est. expiryFeb 23, 2029(~2.6 yrs left)· nominal 20-yr term from priority
Inventors:Koji Kikuchi
G02B 5/201H04N 25/61H04N 25/134G02B 3/0068H04N 9/045H04N 5/3572H04N 5/3696H01L 27/1464H01L 27/14629G02B 5/223H01L 27/1463H04N 25/702H10F 39/8067H10F 39/807H10F 39/806H10F 39/199H04N 25/00
56
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Cited by
35
References
21
Claims

Abstract

A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A solid-state imaging device comprising:
 a plurality of pixel units disposed in a matrix in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one pixel unit; and   a light blocking part provided corresponding to the plurality of pixel units and having apertures corresponding to the pixels in each of the pixel units,   wherein,
 the sizes of the apertures of the light blocking part for each of the pixels in each of the pixel units are so set as to differ depending on distances from a center of the imaging area to a center of the respective pixel unit and depending on a color of the respective pixel. 
   
     
     
       2. The solid-state imaging device according to  claim 1 , wherein a circuit that processes a signal obtained by the pixels is formed of a complementary metal-oxide semiconductor transistor. 
     
     
       3. The solid-state imaging device according to  claim 1 , wherein the pixels are so configured as to capture light from a surface on an opposite side to a surface over which an interconnect layer is formed, of a substrate. 
     
     
       4. The solid-state imaging device according to  claim 1 , wherein a transfer part that transfers a charge captured in the pixels by sequential applying of potential with different phases is provided between the plurality of pixel units. 
     
     
       5. An imaging device, comprising:
 an imaging area including a first region and second region, wherein the first region is closer to a center of the imaging area than the second region;   a light blocking part, including:
 a first aperture disposed corresponding to a first pixel of a first color in the first region; 
 a second aperture disposed corresponding to a second pixel of a second color in the first region; 
 a third aperture disposed corresponding to a third pixel of the first color in the second region; and 
 a fourth aperture disposed corresponding to a fourth pixel of the second color in the second region, 
   wherein a size of the first aperture is larger than a size of the third aperture, and   wherein a size of the second aperture is smaller than a size of the fourth aperture.    
     
     
       6. The imaging device of claim 5, wherein the first color is blue, and wherein the second color is red.  
     
     
       7. The imaging device of claim 6, wherein the light shielding region further includes:
 a fifth aperture disposed corresponding to a fifth pixel of a third color in the first region; and   a sixth aperture disposed corresponding to a sixth pixel of the third color in the second region,   wherein a size of the fifth aperture is the same as a size of the sixth aperture.    
     
     
       8. The imaging device of claim 7, wherein the third color is green.  
     
     
       9. The imaging device of claim 5, further comprising:
 a substrate, wherein the pixels are included in the substrate; and   a plurality of color filters adjacent a first surface of the substrate.    
     
     
       10. The imaging device according to claim 9, further comprising:
 an interconnect layer adjacent a second surface of the substrate.    
     
     
       11. The imaging device of claim 10, further comprising:
 an antireflection film, wherein the antireflection film is between the substrate and the color filters.    
     
     
       12. The imaging device of claim 11, wherein the antireflection film is an HfO film.  
     
     
       13. The imaging device of claim 12, wherein the antireflection film has a thickness of at least 64 nm.  
     
     
       14. The imaging device of claim 11, further comprising:
 an interlayer insulating film, wherein the interlayer insulating film is between the antireflection film and the color filters.    
     
     
       15. The imaging device of claim 14, further comprising:
 a plurality of microlenses, wherein the microlenses are provided on a side of the color filters opposite the substrate.    
     
     
       16. The imaging device of claim 5, wherein the light blocking part is composed of tungsten.  
     
     
       17. The imaging device of claim 5, further comprising:
 a vertical drive circuit, wherein the vertical drive circuit has a readout scanning system operable to selective scan the pixels.    
     
     
       18. The imaging device of claim 17, further comprising:
 a plurality of column circuits, wherein the column circuits receive signals output from respective pixels.    
     
     
       19. The imaging device of claim 18, wherein the column circuits execute correlated double sampling of the received signals.  
     
     
       20. The imaging device of claim 18, wherein the column circuits perform AD conversion.  
     
     
       21. An electronic apparatus comprising:
 the imaging device according to claim 5; and   a signal processing circuitry that processes a signal sent from the imaging device.

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