USRE44469EActiveUtility

Nanoelectronic differential amplifiers and related circuits having graphene nanoribbons

Individually held — no corporate assignee on recordPriority: Feb 17, 2007Filed: Apr 11, 2012Granted: Sep 3, 2013
Est. expiryFeb 17, 2027(~0.6 yrs left)· nominal 20-yr term from priority
H10D 62/882H03F 2203/45008H03F 3/45076H03F 2203/45136G11C 13/025Y10S977/938Y10S977/953H03F 2203/45466H03F 3/45183B82Y 10/00H03F 3/45475H10K 10/466H10K 19/10H10K 85/221
78
PatentIndex Score
3
Cited by
86
References
14
Claims

Abstract

A multiple transistor differential amplifier is implemented on a single graphene nanoribbon. Differential amplifier field effect transistors are formed on the graphene nanoribbon from a first group of electrical conductors in contact with the graphene nanoribbon and a second group of electrical conductors insulated from, but exerting electric fields on, the graphene nanoribbon thereby forming the gates of the field effect transistors. A transistor in one portion of the differential amplifier and a transistor in another portion of the differential amplifier are responsive to an incoming electrical signal. A current source, also formed on the graphene nanoribbon, is connected with the differential amplifier, and the current source and the differential amplifier operating together generate an outgoing signal responsive to the incoming electrical signal.

Claims

exact text as granted — not AI-modified
I claim: 
     
       1. A multiple transistor differential amplifier implemented on a single graphene nanoribbon sensor, the differential amplifier comprising:
 a first plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion of a single graphene nanoribbon; 
 a second plurality of electrical conductors, each conductor separated from the graphene nanoribbon by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the graphene nanoribbon sufficient to form a gate of a field effect transistor; 
 a current source formed in a first section of the graphene nanoribbon of at least one of the electrical contacts and at least one of the gates; 
 a differential amplifier formed in a second section of the graphene nanoribbon of at least one of the electrical contacts and at least one of the gates, and connected with the current source; 
 at least a first portion of the differential amplifier comprising a first graphene nanoribbon transistor electrically responsive to an incoming electrical signal presented to the first graphene nanoribbon transistor; and 
 at least a second portion of the differential amplifier comprising a first graphene nanoribbon transistor electrically responsive to the incoming electrical signal; 
 wherein the differential amplifier and current source together operate as a differential amplifier configured to generate an outgoing signal responsive to the incoming electrical signal. 
 
     
     
       2. The differential amplifier of  claim 1 , wherein the first section of the graphene nanoribbon and the second section of the graphene nanoribbon are adjacent and share a common electrical contact comprising one of the first plurality of electrical conductors. 
     
     
       3. The differential amplifier of  claim 1 , wherein the differential amplifier additionally comprises a graphene nanoribbon field effect transistor used as an active load. 
     
     
       4. The differential amplifier of  claim 1 , wherein the current source comprises an additional graphene nanoribbon field effect transistor. 
     
     
       5. A method for forming a multiple transistor differential amplifier on a single graphene nanoribbon sensor, the method comprising:
 forming a first plurality of electrical conductors on a single graphene nanoribbon, each conductor configured to form an electrical contact at a separate portion of the graphene nanoribbon; 
 forming a second plurality of electrical conductors, each conductor being separated from the graphene nanoribbon by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the graphene nanoribbon sufficient to form a gate of a field effect transistor; 
 forming a current source in a first section of the graphene nanoribbon wherein the current source comprises least one of the electrical contacts and at least one of the gates; and 
 forming a differential amplifier formed in a second section of the graphene nanoribbon wherein the differential amplifier comprises at least one of the electrical contacts and at least one of the gates, and the differential amplifier is connected with the current source, 
 wherein at least a first portion of the differential amplifier comprising a first graphene nanoribbon transistor is electrically responsive to a incoming electrical signal presented to the first graphene nanoribbon transistor, 
 wherein at least a second portion of the differential amplifier comprising a first graphene nanoribbon transistor electrically is responsive to the incoming electrical signal, and 
 wherein the differential amplifier and current source together operate as a differential amplifier configured to generate an outgoing signal responsive to the incoming electrical signal. 
 
     
     
       6. The method of  claim 5 , wherein the first section of the graphene nanoribbon and the second section of the graphene nanoribbon are adjacent and share a common electrical contact comprising one of the first plurality of electrical conductors. 
     
     
       7. The method of  claim 5 , wherein the differential amplifier additionally comprises a graphene nanoribbon field effect transistor used as an active load. 
     
     
       8. The method of  claim 5 , wherein the current source comprises an additional graphene nanoribbon field effect transistor. 
     
     
       9. An optically interconnected graphene nanoribbon electronic system, the system comprising:
 a first plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion of a single graphene nanoribbon; 
 a second plurality of electrical conductors, each conductor separated from the graphene nanoribbon by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the graphene nanoribbon sufficient to form a gate of a first field effect transistor in a first portion of the graphene nanoribbon; 
 a first graphene nanoribbon sensor in a second portion of the graphene nanoribbon, the graphene nanoribbon sensor electrically responsive to an incoming optical stimulus presented to the first graphene nanoribbon sensor; 
 a third plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion of the graphene nanoribbon; 
 a fourth plurality of electrical conductors, each conductor separated from the graphene nanoribbon by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the graphene nanoribbon sufficient to form a gate of a second field effect transistor in a second portion of the graphene nanoribbon; 
 a graphene nanoribbon light emission element in the second portion of the graphene nanoribbon, the graphene nanoribbon light emission element responsive to electrical signals from the second field effect transistor; 
 wherein the graphene nanoribbon implements a first field effect transistor electrical circuit and a second field effect transistor electrical circuit; and 
 wherein the first field effect transistor electrical circuit provides a first optical signal to the second field effect transistor electrical circuit. 
 
     
     
       10. The system of  claim 9 , wherein the system comprises at least a third field effect transistor electrical circuit and wherein the optical signal is additionally directed to the third field effect transistor electrical circuit. 
     
     
       11. The system of  claim 9 , wherein the system comprises at least a third field effect transistor electrical circuit and wherein a second optical signal is generated by the third field effect transistor electrical circuit. 
     
     
       12. The system of  claim 11 , wherein the larger graphene nanoribbon electronic system further comprises at least a fourth field effect transistor electrical circuit and wherein the first and second optical signals implement wavelength division multiplexing. 
     
     
       13. The system of  claim 9 , wherein the system is part of a larger graphene nanoribbon electronic system comprising at least a third field effect transistor electrical circuit utilizing an electrical signal associated with at least one of the first and second field effect transistor electrical circuits. 
     
     
       14. The system of  claim 9 , wherein the optical signal is transmitted by an optical structure.

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