Semiconductor device having multi-layered wiring

Abstract

A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.

1. A semiconductor device comprising:
 a substrate; 
 a first insulating film;  
 a first wiring layer formed in the first insulating film;  
 a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film whose specific dielectric constant is not more than 3;  
 a second wiring layer formed in the second insulating film, wherein a part of the second wiring layer is embedded in the low dielectric constant film, and coupled to the first wiring layer through a first connection section; and  
 a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, the third insulating film covering the second wiring layer, and at least one of the first and third insulating films being one of: a film consisting essentially of SiON, a film consisting essentially of SiN, and a laminated film being the films consisting essentially of SiON or SiN, respectively,  
   wherein the first wiring layer is physically connected to the substrate through a contact plug, and    
   the third insulating layer is formed above a diffusion preventing film.    
 
     
     
       2. A semiconductor device comprising:
 a first insulating film;  
 a first wiring layer formed above the first insulating film;  
 a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film whose specific dielectric constant is no more than 3;  
 a second wiring layer formed in the second insulating film, wherein a part of the second wiring layer is embedded in the low dielectric constant film, and coupled to the first wiring layer through a first connection section; and  
 a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, the third insulating film covering the second wiring layer, and at least one of the first and third insulating films being one of: a film consisting essentially of SiON, a film consisting essentially of SiN, and a laminated film including the films consisting essentially of SiON or SiN, respectively.  
 
     
     
       3. A semiconductor device according to  claim 1 , further comprising:
 a fourth insulating film interposed between the second and third insulating films and serving as an interlayer insulating film; and  
 a third wiring layer formed in the fourth insulating film and coupled to the second wiring layer through a second connection section, said fourth insulating film including one of a film consisting essentially of SiON, a film consisting essentially of SiN, and a film consisting essentially of SiO.  
 
     
     
       4. A semiconductor device according to  claim 2 , further comprising:
 a fourth insulating film interposed between the second and third insulating films and serving as an interlayer insulating film; and  
 a third wiring layer formed in the fourth insulating film and coupled to the second wiring layer through a second connection section, said fourth insulating film including one of a film consisting essentially of SiON, a film consisting essentially of SiN, and a film consisting essentially of SiO.  
 
     
     
       5. A semiconductor device according to  claim 1 , wherein each of the film consisting essentially of SiON, the film consisting essentially of SiN, and the laminated film being the films consisting essentially of SiON or SiN respectively has a thickness of not less than 100 nm. 
     
     
       6. A semiconductor device according to  claim 2 , wherein each of the film consisting essentially of SiON, the film consisting essentially of SiN, and the laminated film being the films consisting essentially of SiON or SiN respectively has a thickness of not less than 100 nm. 
     
     
       7. A semiconductor device according to  claim 3 , wherein each of the film consisting essentially of SiON, the film consisting essentially of SiN, and the laminated film being the films consisting essentially of SiON or SiN respectively has a thickness of not less than 100 nm. 
     
     
       8. A semiconductor device according to  claim 4 , wherein each of the film consisting essentially of SiON, the film consisting essentially of SiN, and the laminated film being the films consisting essentially of SiON or SiN respectively has a thickness of not less than 100 nm. 
     
     
       9. A semiconductor device according to  claim 1 , wherein said first wiring layer is a local wiring layer. 
     
     
       10. A semiconductor device according to  claim 2 , wherein said first wiring layer is a local wiring layer. 
     
     
       11. A semiconductor device according to  claim 3 , wherein said third wiring layer is one of a power supply line and a grounding line. 
     
     
       12. A semiconductor device according to  claim 4 , wherein said third wiring layer is one of a power supply line and a grounding line. 
     
     
       13. A semiconductor device according to  claim 1 , wherein said first and second wiring layers and said first connection section form of a via-ring structure. 
     
     
       14. A semiconductor device according to  claim 2 , wherein said first and second wiring layers and said first connection section form of a via-ring structure. 
     
     
       15. A semiconductor device according to  claim 13 , wherein the first and second wiring layers, which are part of the via-ring structure, are located close or adjacent to the first and third insulating films, respectively. 
     
     
       16. A semiconductor device according to  claim 14 , wherein the first and second wiring layers, which are part of the via-ring structure, are located close or adjacent to the first and third insulating films, respectively. 
     
     
       17. A semiconductor device according to  claim 3 , wherein said first, second and third wiring layers and said first and second connection sections form of a via-ring structure. 
     
     
       18. A semiconductor device according to  claim 4 , wherein said first, second and third wiring layers and said first and second connection sections form of a via-ring structure. 
     
     
       19. A semiconductor device according to  claim 17 , wherein the first and third wiring layers, which are part of the via-ring structure, are located close or adjacent to the first and third insulating films, respectively. 
     
     
       20. A semiconductor device according to  claim 18 , wherein the first and third wiring layers, which are part of the via-ring structure, are located close or adjacent to the first and third insulating films, respectively. 
     
     
       21. The semiconductor according to  claim 1 , comprising:
   a fourth insulating layer formed between said first and second insulating layers, said fourth insulating layer including a plurality of low dielectric constant films whose specific dielectric constant is not more than  3 , said plurality of low dielectric constant films being respectively formed on diffusion preventing films; and        a plurality of third wiring layers formed in said fourth insulating layer and connected to said first and second wiring layers, said plurality of third wiring layers being respectively formed in said plurality of low dielectric constant films.     
     
     
       22. The semiconductor device according to  claim 21 , wherein said second and fourth insulating layers have substantially the same thickness. 
     
     
       23. The semiconductor device according to  claim 21 , wherein:
   said low dielectric constant films in said second and fourth insulating layers have substantially the same thickness; and        said diffusion preventing films in said second and fourth insulating layers have substantially the same thickness.     
     
     
       24. The semiconductor device according to  claim 21 , wherein:
   said diffusion preventing films in said second and fourth insulating layers are formed directly on said low dielectric constant film in said fourth insulating layer; and        said diffusion preventing films in said second and third insulating layers are formed directly on said low dielectric constant film in said second insulating layer.     
     
     
       25. The semiconductor device according to  claim 21 , wherein:
   said first insulating layer comprises Si and N; and        each of said diffusion preventing films in said second, third and fourth insulating layers comprises one of SiN, SiC, SiOC and SiCN.     
     
     
       26. The semiconductor device according to  claim 21 , wherein:
   said fourth insulating layer comprises at least two layers each containing Si and N.     
     
     
       27. The semiconductor device according to  claim 21 , wherein said first, second and third wiring layers form a via- ring structure.   
     
     
       28. The semiconductor device according to  claim 27 ,
   wherein said contact plug, said first wiring layer, said second wiring layer, said third wiring layer, said first insulating layer, and said third insulating layer surround said second insulating layer and said fourth insulating layer.     
     
     
       29. The semiconductor device according to  claim 21 , wherein:
   an upper surface of said second wiring layer and an upper surface of said low dielectric constant film in said second insulating layer are substantially coplanar; and        an upper surface of said third wiring layer and an upper surface of said low dielectric constant film in said fourth insulating layer are substantially coplanar.     
     
     
       30. The semiconductor device according to  claim 1 , comprising:
   a connection member formed in said third insulating layer and connected to said second wiring layer.     
     
     
       31. The semiconductor device according to  claim 1 , wherein said first and second wiring layers form a via- ring structure.   
     
     
       32. The semiconductor device according to  claim 31 ,
   wherein said first wiring layer, said second wiring layer, said first insulating layer, and said third insulating layer surround said second insulating layer.     
     
     
       33. The semiconductor device according to  claim 1 , comprising:
   an opening formed in said third insulating layer on a portion of said second wiring layer.     
     
     
       34. The semiconductor device according to  claim 33 , wherein said portion of said second wiring layer serves as a pad electrode. 
     
     
       35. The semiconductor device according to  claim 1 ,
   wherein said first and third insulating films include a film with low water absorption and water permeability.     
     
     
       36. The semiconductor device according to  claim 1 ,
   wherein said diffusion preventing film in said third insulating layer has a thickness of about  70  nm.