Semiconductor device package with improved cooling

Abstract

A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom. The metal clip or drain clip has a plurality, a parallel spaced fins extending from its outwardly facing surface.

1. A semiconductor device comprising:
 a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;  
 an electrically conductive web portion having a first major surface electrically connected to said first electrode;  
 a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface; and  
 at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion wherein said second electrode of said semiconductor die is adapted to be directly connected electrically and mechanically to a conductive pad and said conductive post includes a connection surface for electrical and mechanical connection to another conductive pad so that said package  semiconductor die may become externally connectable to a substrate having said conductive pads with a conductive adhesive without the necessity for an auxiliary element for external connection.  
 
     
     
       2. A semiconductor device according to  claim 1 , wherein said electrically conductive web portion is electrically connected to said first electrode by a layer of conductive adhesive. 
     
     
       3. A semiconductor device according to  claim 2 , wherein said conductive adhesive comprises of solder. 
     
     
       4. A semiconductor device according to  claim 2 , wherein said conductive adhesive comprises of conductive epoxy. 
     
     
       5. A semiconductor device according to  claim 1 , wherein said plurality of heat conductive structures and said at least one conductive post are integral with said electrically conductive web portion thereby forming a unitary body. 
     
     
       6. A semiconductor device according to  claim 5 , wherein said unitary body comprises a thermally conductive material. 
     
     
       7. A semiconductor device according to  claim 5 , wherein said unitary body comprises one of aluminum and a metal matrix polymer. 
     
     
       8. A semiconductor device according to  claim 1 , further comprising at least another conductive post extending from another edge of said web portion in a direction away from said first major surface of said web portion. 
     
     
       9. A semiconductor device according to  claim 1 , wherein said semiconductor die is a power switching device. 
     
     
       10. A semiconductor device according to  claim 9 , wherein said power switching device is a MOSFET. 
     
     
       11. A semiconductor device according to  claim 10 , wherein said drain electrode of said MOSFET is electrically connected to said web portion. 
     
     
       12. A semiconductor device according to claim  1    5 , wherein said unitary body comprises one of copper and copper alloy. 
     
     
       13. A semiconductor device according to  claim 1 , wherein each of said heat conductive structures is one of a fin and a pin. 
     
     
       14. A semiconductor device comprising:
 a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;  
 an electrically conductive web portion having a first major surface electrically connected to said first electrode;  
 a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface; 
 at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and  
 an insulation filler disposed between said die and said at least one conductive post.  
 
     
     
       15. A semiconductor device comprising:
 a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;  
 an electrically conductive web portion having a first major surface electrically connected to said first electrode;  
 a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface;  
 at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and  
 a third electrode disposed on said second major surface of said die.  
 
     
     
       16. A semiconductor device comprising:
 a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;  
 an electrically conductive web portion having a first major surface electrically connected to said first electrode;  
 a plurality of heat conductive structures extending away from a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface;  
 at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion; and  
 a third electrode disposed on said second major surface of said die;  
 a passivation layer disposed over at least portions of said second electrode and said third electrode of said semiconductor die.  
 
     
     
       17. A clip comprising:
 an electrically conductive web portion having a first major surface for adhesion and electrical connection to an electrode of a semiconductor die, and a second major surface opposite to said first major surface;  
 a plurality of fins connected to and extending away from said second major surface of said electrically conductive web portion; and  
 at least one conductive post connected to an edge of said electrically conductive web portion and extending away from said first major surface;  
 wherein said unitary body  clip is comprised of a metal matrix polymer.  
 
     
     
       18. A clip according to  claim 17 , wherein said plurality of fins and said at least one conductive post are integrally connected to said electrically conductive web portion thereby forming a unitary body. 
     
     
       19. A clip according to  claim 17 , further comprising at least another conductive post connected to another edge of said electrically conductive web portion and extending away from said first major surface of said web portion. 
     
     
       20. A semiconductor device comprising:
   a semiconductor die having a first electrode disposed on a first major surface thereof and a second electrode disposed on a second major surface thereof;        an electrically conductive web portion having a first major surface electrically connected to said first electrode;        a plurality of heat conductive structures thermally and mechanically coupled to a second major surface of said web portion, said second major surface of said web portion being opposite to its first major surface; and        at least one conductive post extending from an edge of said web portion in a direction away from said first major surface of said web portion wherein said second electrode of said semiconductor die is adapted to be directly connected electrically and mechanically to a conductive pad and said conductive post includes a connection surface for electrical and mechanical connection to another conductive pad so that said semiconductor die may become externally connectable to a substrate having said conductive pads with a conductive adhesive without the necessity for an auxiliary element for external connection.     
     
     
       21. A semiconductor device according to  claim 20 , wherein said electrically conductive web portion is electrically connected to said first electrode by a layer of conductive adhesive. 
     
     
       22. A semiconductor device according to  claim 21 , wherein said conductive adhesive comprises of solder. 
     
     
       23. A semiconductor device according to  claim 21 , wherein said conductive adhesive comprises of conductive epoxy. 
     
     
       24. A semiconductor device according to  claim 20 , wherein said plurality of heat conductive structures and said at least one conductive post are integral with said electrically conductive web portion thereby forming a unitary body. 
     
     
       25. A semiconductor device according to  claim 24 , wherein said unitary body comprises a thermally conductive material. 
     
     
       26. A semiconductor device according to  claim 24 , wherein said unitary body comprises one of aluminum and a metal matrix polymer. 
     
     
       27. A semiconductor device according to  claim 20 , further comprising an insulation filler disposed between said die and said at least conductive post. 
     
     
       28. A semiconductor device according to  claim 20 , further comprising at least another conductive post extending from another edge of said web portion in a direction away from said first major surface of said web portion. 
     
     
       29. A semiconductor device according to  claim 20 , wherein said semiconductor die is a power switching device. 
     
     
       30. A semiconductor device according to  claim 29 , wherein said power switching device is a MOSFET. 
     
     
       31. A semiconductor device according to  claim 30 , wherein said drain electrode of said MOSFET is electrically connected to said web portion. 
     
     
       32. A semiconductor device according to  claim 20 , wherein said semiconductor die further includes a third electrode disposed on said second major surface of said die. 
     
     
       33. A semiconductor device according to  claim 32 , further comprising a passivation layer disposed over at least portions of said second electrode and said third electrode of said semiconductor die. 
     
     
       34. A semiconductor device according to  claim 24 , wherein said unitary body comprises one of copper and copper alloy. 
     
     
       35. A semiconductor device according to  claim 20 , wherein said heat conductive structures comprise fins. 
     
     
       36. A semiconductor device according to  claim 20 , wherein said heat conductive structures comprise pins.