Methods for growing semiconductors and devices thereof the alloy semiconductor gainnas

Abstract

A method is disclosed for growing a nitrogen-containing III-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity. There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.

1. A method for growing at least one layer of III-V alloy semiconductor on a semiconductor substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by a conventional low pressure MOCVD method, using a nitrogen containing organic compound as a source material for nitrogen and AsH 3  for arsenic, wherein said III-V alloy semiconductor comprises GaInNAs. 
     
     
       2. The method according to  claim 1 , wherein said semiconductors substrate comprises GaAs. 
     
     
       3. The method according to  claim 1 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       4. The method according to  claim 1 , further comprising controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium. 
     
     
       5. A method for growing at least one layer of III-V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by a conventional low pressure MOCVD method under specified conditions of temperatures and pressures, using a nitrogen containing organic compound as a source material for nitrogen and AsH 3  for arsenic, wherein said III-V alloy semiconductor comprises GaInNAs. 
     
     
       6. The method according to  claim 5 , wherein said specified conditions are a partial pressure of said AsH 3  in a reactor of equal to or more than 2 Pa and a temperature of said semiconductor substrate of equal to or more than 550° C. 
     
     
       7. The method according to  claim 5 , wherein said specified conditions are a partial pressure of said AsH 3  in a reactor of equal to or more than 10 Pa and a temperature of said semiconductor substrate of equal to or more than 600° C. 
     
     
       8. The method according to  claim 5 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       9. The method according to  claim 5 , further comprising controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium. 
     
     
       10. A method for growing at least one layer of III-V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising:
 forming said alloy semiconductor by a conventional low pressure MOCVD method, using a nitrogen containing organic compound as a source material for nitrogen and AsH 3  for arsenic, under conditions such as a partial pressure of said AsH 3  in a reactor of equal to or more than 2 Pa and a temperature of said semiconductor substrate of equal to or more than 550° C., wherein said III-V alloy semiconductor comprises GaInNAs.  
 
     
     
       11. The method according to  claim 10 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       12. The method according to  claim 10 , further comprising:
 controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of selenium, zinc, and magnesium.  
 
     
     
       13. A method for growing at least one layer of III-V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising:
 forming said alloy semiconductor by a conventional low pressure MOCVD method using a nitrogen containing organic compound as a source material for nitrogen and AsH 3  for arsenic, under conditions such as a partial pressure of said AsH 3  in a reactor of equal to or more than 10 Pa and a temperature of said semiconductor substrate of equal to or more than 600° C., wherein said III-V alloy semiconductor comprises GaInNAs.  
 
     
     
       14. The method according to  claim 13 , wherein said nitrogen containing organic compound as said source material for nitrogen is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       15. The method according to  claim 13 , further comprising:
 controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium.  
 
     
     
       16. A method for fabricating a semiconductor device, having at least one layer of a III-V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising:
 forming said alloy semiconductor by a conventional low pressure MOCVD method, using a nitrogen containing organic compounds as a source material for nitrogen and AsH 3  for arsenic, under conditions such as a partial pressure of said AsH 3  in a reactor of equal to or more than 2 Pa and a temperature of said semiconductor substrate of equal to or more than 550° C., wherein said III-V alloy semiconductor comprises GaInNAs.  
 
     
     
       17. The method according to  claim 16 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       18. The method according to  claim 16 , further comprising:
 controlling conductive properties of, and carrier concentrations in said semiconductors by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium.  
 
     
     
       19. A method for fabricating a semiconductor device, having at least one layer of a III-V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising:
 forming said alloy semiconductor by a conventional low pressure MOCVD method using a nitrogen containing organic compound as a source material for nitrogen and AsH 3  for arsenic, under conditions such as a partial pressure of said AsH 3  in a reactor of equal to or more than 10 Pa and a temperature of said semiconductor substrate of equal to or more than 600° C.,  
 wherein said III-V alloy semiconductor comprises at least Ga, In, N and As. 
 
     
     
       20. The method according to  claim 19 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       21. The  A method according to  claim 19 , further  for fabricating a semiconductor device, having at least one layer of a III-V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising:
 forming said alloy semiconductor by a conventional low pressure MOCVD method using a nitrogen containing organic compound as a source material for nitrogen and AsH 3    for arsenic, under conditions such as a partial pressure of said AsH   3    in a reactor of equal to or more than  10  Pa and a temperature of said semiconductor substrate of equal to or more than  600 ° C.; and    
 controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium.  
 
     
     
       22. A method for growing at least one layer of III- V alloy semiconductor on a semiconductor substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, wherein said III - V alloy semiconductor comprises at least Ga, In, N, and As.   
     
     
       23. The method according to  claim 22 , wherein said semiconductors substrate comprises GaAs. 
     
     
       24. The method according to  claim 22 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       25. The method according to  claim 22 , further comprising controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium. 
     
     
       26. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method under specified conditions of temperatures and at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       27. The method according to  claim 26 , wherein said specified conditions are a partial pressure of said source material for arsenic in a reactor of equal to or more than  2  Pa and a temperature of said semiconductor substrate of equal to or more than  550 ° C. 
     
     
       28. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method under specified conditions of temperatures and at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, wherein said III - V alloy semiconductor comprises at least N and As, wherein said specified conditions are a partial pressure of said source material for arsenic in a reactor of equal to or more than  10  Pa and a temperature of said semiconductor substrate of equal to or more than  600 ° C.   
     
     
       29. The method according to  claim 26 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       30. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method under specified conditions of temperatures and at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, and controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium, wherein said III - V alloy semiconductor comprises at least N and As.   
     
     
       31. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising: forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor of equal to or more than  2  Pa and a temperature of said semiconductor substrate equal to or more than  500 ° C., wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       32. The method according to  claim 31 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       33. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising:      forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor of equal to or more than  2  Pa and a temperature of said semiconductor substrate equal to or more that  500 ° C.        controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of selenium, zinc, and magnesium,        wherein said III - V alloy semiconductor comprises at least N and As.     
     
     
       34. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising: forming said alloy semiconductor by an MOCVD method using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor equal to or more than  10  Pa and a temperature of said semiconductor substrate equal to or more than  600 ° C., wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       35. The method according to  claim 34 , wherein said nitrogen containing organic compound as said source material for nitrogen is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       36. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor equal to or more than  10  Pa and a temperature of said semiconductor substrate equal to or more than  600 ° C., and controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium, wherein said III - V alloy semiconductor comprises at least N and As.   
     
     
       37. A method for fabricating a semiconductor device, having at least one layer of a III- V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising: forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compounds as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor equal to or more than  2  Pa and a temperature of said semiconductor substrate equal to or more than  500 ° C., wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       38. The method according to  claim 37 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       39. A method for fabricating a semiconductor device, having at least one layer of III- V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising:      forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compounds as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor of equal to or more than  2  Pa and a temperature of said semiconductor substrate equal to or more that  500 ° C.; and        controlling conductive properties of, and carrier concentrations in said semiconductors by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium, wherein said III - V alloy semiconductor comprises at least N and As.     
     
     
       40. A method for fabricating a semiconductor device, having at least one layer of a III- V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising: forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor equal to or more than  10  Pa and a temperature of said semiconductor substrate equal to or more than  600 ° C., wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       41. The method according to  claim 40 , wherein said nitrogen containing organic compound is selected from the group consisting of dimethylhydrazine and tertiary butyl amine. 
     
     
       42. A method for fabricating a semiconductor device, having at least one layer of III- V alloy semiconductor on a GaAs substrate, comprised of a plurality of group V elements including at least nitrogen and arsenic simultaneously, comprising:      forming said alloy semiconductor by an MOCVD method at a pressure of at least that of conventional low pressure MOCVD using a nitrogen containing organic compounds as a source material for nitrogen and using a source material for arsenic, under conditions such as a partial pressure of said source material for arsenic in a reactor equal to or more than  10  Pa and a temperature of said semiconductor substrate equal to or more that  600 ° C.; and        controlling conductive properties of, and carrier concentrations in said alloy semiconductor by adding a dopant, wherein said dopant is selected from the group consisting of beryllium, magnesium, zinc, carbon, silicon, germanium, tin, sulfur, tellurium, and selenium.     
     
     
       43. The method according to any one of claims  1 ,  5 ,  10 ,  13 ,  16 ,  19 ,  22 ,  26 ,  31 ,  34 ,  37  and  40  comprising the use of a horizontal type MOCVD apparatus to carry out said MOCVD method. 
     
     
       44. A method for growing at least one layer of III- V alloy semiconductor on a GaAs substrate, and including at least nitrogen and arsenic simultaneously, comprising forming said alloy semiconductor by an MOCVD method under specified conditions of at least one of temperatures and at a pressure of at least that of conventional low pressure MOCVD, using a nitrogen containing organic compound as a source material for nitrogen and using a source material for arsenic, wherein said III - V alloy semiconductor comprises at least Ga, In, N and As.   
     
     
       45. A method as in  claim 44  wherein the specified conditions comprise conditions of temperatures. 
     
     
       46. A method as in  claim 44  wherein the specified conditions comprise conditions of pressures.