Acceleration sensor and process for the production thereof

Abstract

A single crystal silicon substrate ( 1 ) is bonded through an SiO 2 film ( 9 ) to a single crystal silicon substrate ( 8 ), and the single crystal silicon substrate ( 1 ) is made into a thin film. A cantilever ( 13 ) is formed on the single crystal silicon substrate ( 1 ), and the thickness of the cantilever ( 13 ) in a direction parallel to the surface of the single crystal silicon substrate ( 1 ) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate ( 1 ), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever ( 13 ) and the part of the single crystal silicon substrate ( 1 ), opposing the cantilever ( 13 ), are, respectively, coated with an SiO 2 film ( 5 ), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit ( 10 ) is formed on the single crystal silicon substrate ( 1 ), so that signal processing is performed as the cantilever ( 13 ) moves.

1. An acceleration sensor comprising:
 a first substrate formed of a silicon material which is used as a conductive material;    a second substrate provided on the lower side of said first substrate and electrically insulated from the first substrate;    said first substrate including: 
 a support beam having a mass portion forming capacitive electrodes for displacement in a parallel direction to a surface of said second substrate according to the degree of acceleration, a fixed portion for fixing said support beam to said second substrate and a support portion for intermediately supporting said mass portion to said fixed portion,  
 an insulating groove extending through a thickness of said first substrate around the entire periphery of said support beam, and stationary blocks forming capacitive electrodes defined by said insulating groove on the outer sides of said support beam separately across said insulating groove and fixed to said second substrate; and  
 gap means forming a gap space in order to space said mass portion and said supporting portion from a surface of said second substrate; and  
   said second substrate being separated from said first substrate by an insulating layer which is at least provided on the lower side of said fixed portion and stationary blocks.    
     
     
       2. An acceleration sensor as defined in  claim 1 , wherein said insulating groove defines a narrow detection groove between said mass portion of said support beam and each of said stationary blocks, and movable and stationary electrodes are formed on lateral side surfaces of said support beam and said stationary blocks in face to face relation with each other across said detection groove. 
     
     
       3. An acceleration sensor as defined in  claim 1 , wherein said support beam is securely fixed to said second substrate at said fixed end, and reduced in a width in said support portion to provide at least one support for said mass portion in a fore free end portion to be displayed horizontally according to the degree of acceleration in the fashion of at least one fulcrum point type acceleration sensor. 
     
     
       4. An acceleration sensor as defined in  claim 3 , wherein said width of said support portion is smaller than a thickness of said fixed portion and said support beam provides a cantilever type support. 
     
     
       5. An acceleration sensor as defined in  claim 1 , wherein said first substrate is formed of silicon material with a (100) crystal face. 
     
     
       6. An acceleration sensor as defined in  claim 5 , wherein said first substrate is formed of a n-type silicon material. 
     
     
       7. An acceleration sensor as defined in  claim 1 , wherein said second substrate is formed of a silicon material having a surface covered with an insulating oxidation film. 
     
     
       8. An acceleration sensor comprising:
 a substrate which is selected from the group consisting of an insulating material and oxidized semiconductor material;    a support beam which includes a mass portion forming a predetermined mass and first capacitive electrodes on side surfaces of said mass portion, a fixed portion for fixing said support beam to said substrate and a thin support portion for intermediately connecting between said mass portion and said fixed portion;    a pair of stationary blocks arranged on both sides of said support beam separately across an air gap and fixed to said substrate, said stationary blocks provided with second capacitive electrodes on the opposite sides of first capacitive electrodes of said mass portion;    gap means forming a gap space in order to space said mass portion and thin support portion from a surface of said substrate; and    said mass portion being displace in a parallel direction to the surface of said substrate according to the degree of acceleration and said support beam and stationary blocks formed of a silicon material which is used as a conductive material and electrically insulated from said substrate.    
     
     
       9. An acceleration sensor as defined in  claim 8 , wherein said gap means is formed of an insulating layer at least between said substrate and said fixed portion of the support beam and said stationary blocks. 
     
     
       10. An acceleration sensor as defined in  claim 8 , wherein movable and stationary electrodes are formed on lateral side surfaces of said mass portion and said stationary blocks in face to face relation with each other across said air gap. 
     
     
       11. An acceleration sensor as defined in  claim 8 , wherein a width of said thin support portion is smaller than a thickness of said fixed portion. 
     
     
       12. An acceleration sensor as defined in  claim 8 , wherein said support beam and stationary blocks are formed of a n-type silicon material with a (100) crystal face. 
     
     
       13. An acceleration sensor as defined in  claim 8 , wherein said substrate is formed of a silicon material having a surface covered with an insulating oxidation film. 
     
     
       14. An acceleration sensor comprising:
 A. a first single crystalline silicon substrate having a first surface and a second surface opposite said first surface;    B. a second single crystalline silicon substrate connected to a side of said first surface of said first single crystalline silicon substrate with an insulating layer interposed therebetween;    C. said first single crystalline silicon substrate including; 
 i. a movable beam defined by a trench which is disposed to surround said movable beam and extend from said second surface to said first surface, said movable beam being supported by said second single crystalline silicon substrate through said insulating layer to be displaceable in a direction parallel to said first surface of said first single crystalline silicon substrate,  
 ii. a stationary block disposed to be spaced apart from said movable beam via said trench, facing said movable beam to form a pair of capacitive electrodes with said movable beam, and fixed to said second single crystalline silicon substrate; and  
   D. a signal-processing circuit element for carrying out a processing operation based on a change of a capacitance between said capacitive electrodes.    
     
     
       15. An acceleration sensor according to  claim 14 , wherein said movable beam has a first thickness along said direction parallel to said first surface of said first single crystal silicon substrate and a second thickness in a direction perpendicular to said first surface of said first crystal silicon substrate, said first thickness being smaller than said second thickness. 
     
     
       16. An acceleration sensor according to  claim 14 , wherein at least one of a surface of said movable beam exposed to said trench and a surface of said first single crystal silicon substrate facing said movable beam is covered with an insulator. 
     
     
       17. An acceleration sensor according to  claim 14 , wherein said movable beam or said stationary block comprise an impurity-doped region to form said capacitive electrodes. 
     
     
       18. An acceleration sensor according to  claim 14 , further comprising first, second and third stationary blocks, each of which is formed of a part of said first single crystal silicon substrate, and wherein said movable beam includes a first branch and a second branch, said first branch being interposed between said stationary block and said first stationary block with a first air gap defined therebetween, said second branch of said movable beam being interposed between said second and said third stationery blocks with a second air gap defined therebetween, said stationary block and said second stationary block being electrically connected with each other, said first and said third stationary blocks being electrically connected with each other. 
     
     
       19. An acceleration sensor according to  claim 14 , wherein said signal-processing circuit is disposed on said first single crystal silicon substrate. 
     
     
       20. An acceleration sensor comprising:
 A. a first single crystalline silicon substrate having a first surface and a second surface opposite said first surface;    B. a second single crystalline silicon substrate connected to a side of said first surface of said first single crystalline silicon substrate with an insulating layer interposed therebetween;    C. said first single crystalline silicon substrate being divided by a trench extending from said second surface to said first surface; 
 i. a movable beam portion surrounded by said trench, said movable beam portion being supported by said second single crystalline silicon substrate through said insulating layer to be displaceable in a direction parallel to said first surface of said first single crystalline silicon substrate, said movable beam portion having a movable electrode,  
 ii. a stationary portion disposed to be spaced apart from said movable beam via said trench, having a stationary electrode which faces said movable beam via said trench to form a pair of capacitive electrodes with said movable electrode, and fixed to said second single crystalline silicon substrate; and  
   D. an insulator covering at least one of a surface of said movable electrode and a surface of said stationary electrode.    
     
     
       21. An acceleration sensor according to  claim 20 , further comprising a signal-processing circuit defined in the first single crystal silicon substrate for carrying out a processing operation based on a change of a capacitance between said movable electrode and said stationary electrode. 
     
     
       22. A semiconductor dynamic amount sensor comprising:
   a silicon layer;        a silicon substrate located on the lower side of said silicon layer and electrically insulated from the silicon layer with an insulating layer provided on a peripheral portion of the silicon substrate interposed therebetween;        said silicon layer including:        a support beam having a mass portion which is horizontally displaceable according to a degree of dynamic amount;        an insulating groove extending through the entire thickness of the silicon layer around the entire periphery of the support beam; and        stationary portions provided spaced apart from both sides of said support beam via said insulating groove and fixed to said silicon substrate;        wherein said insulating layer forms a gap between the upper surface of said silicon substrate and the lower surface of said support beam and mass portion.     
     
     
       23. The semiconductor dynamic amount sensor according to  claim 22 , wherein at least lateral surfaces of said support beam and said stationary portions facing said insulating groove are made of a silicon material having a low resistivity. 
     
     
       24. The semiconductor dynamic amount sensor according to  claim 23 , wherein a highly concentrated n +    electrode is provided on said support beam and said stationary portions.   
     
     
       25. The semiconductor dynamic amount sensor according to  claim 22 , wherein said silicon layer comprises therein a signal- processing circuit for processing signal resulting from an action of said mass portion.   
     
     
       26. The semiconductor dynamic amount sensor according to  claim 25 , wherein said signal- processing circuit is a closed - loop circuit.   
     
     
       27. The semiconductor dynamic amount sensor according to  claim 22 , wherein said support beam has a thickness greater than a width thereof. 
     
     
       28. The semiconductor dynamic amount sensor according to  claim 22 , wherein said support beam has a thickness in the direction of the silicon layer thickness greater than a width in the direction of the silicon substrate surface. 
     
     
       29. The semiconductor dynamic amount sensor according to  claim 28 , wherein at least either of the surface of said support beam and the surface of said stationary portions facing said mass portion is covered with an insulating material. 
     
     
       30. The semiconductor dynamic amount sensor according to  claim 22 , wherein at least either of the surface of said support beam and the surface of said stationary portions facing said mass portion is covered with an insulating material. 
     
     
       31. The semiconductor dynamic amount sensor according to  claim 22 , wherein said silicon layer comprises a single crystal silicon and has a resistivity of  1  to  20 Ω·cm. 
     
     
       32. The semiconductor dynamic amount sensor according to  claim 22 , wherein said support beam is set to have an almost constant electrical potential. 
     
     
       33. A semiconductor dynamic amount sensor comprising:
   a silicon layer;        a silicon substrate located on the lower side of said silicon layer and electrically insulated from the silicon layer through an insulating layer provided on a peripheral portion of the silicon substrate interposed therebetween;        said silicon layer including:        a support beam having a movable portion comprising a weight portion which is horizontally displaceable according to a degree of dynamic amount, a movable electrode and a beam portion;        an insulating groove extending through the entire thickness of the silicon layer around the entire periphery of the support beam; and        stationary portions provided spaced apart from said movable electrode via said insulating groove and fixed to said silicon substrate;        wherein said insulating layer ensures a gap between the upper surface of said silicon substrate and the lower surface of said movable portion comprising said weight portion, said movable electrode and said beam portion.     
     
     
       34. The semiconductor dynamic amount sensor according to  claim 33 , wherein at least surface portions of said stationary portions and said movable portion comprise a low resistant highly concentrated regions. 
     
     
       35. The semiconductor dynamic amount sensor according to  claim 34 , wherein a highly concentrated n +    electrode is provided on said support beam and said stationary portions.   
     
     
       36. The semiconductor dynamic amount sensor according to  claim 33 , wherein said silicon layer comprises therein a signal- processing circuit for processing signal resulting from an action of said movable portion.   
     
     
       37. The semiconductor dynamic amount sensor according to  claim 36 , wherein said signal- processing circuit is a closed - loop circuit.   
     
     
       38. A semiconductor dynamic amount sensor comprising:
   a silicon layer;        a silicon substrate located on the lower side of said silicon layer and electrically insulated from the silicon layer through an insulating member provided on a peripheral portion of the silicon substrate;        said silicon layer including:        a first movable portion comprising a weight portion which is horizontally displaced according to a degree of dynamic amount, a movable electrode and a beam portion;        a second movable portion different from said first movable portion is provided to said silicon substrate in such a manner that said second movable portion is electrically insulated from said first movable portion via an insulating material and is movable in a direction perpendicular to the moving direction of said first movable portion;        an insulating groove extending through the entire thickness of the silicon layer around the entire periphery of the support beam; and        stationary portions facing and spaced apart from said movable electrode via said insulating groove and fixed to said silicon substrate;        wherein said insulating member ensures a gap between the upper surface of said silicon substrate and the lower surface of said first movable portion comprising said weight portion, said movable electrode and said beam portion.     
     
     
       39. The semiconductor dynamic amount sensor according to  claim 38 , wherein a third movable portion different from said movable portion and said second movable portion is provided to said silicon substrate in such a manner that said third movable portion is electrically insulated from said movable portion and said second movable portion via an insulating material and is movable in a direction perpendicular to the moving directions of said movable portion and said second movable portion. 
     
     
       40. The semiconductor dynamic amount sensor according to  claim 33 , wherein said first movable portion is set to have an almost constant electrical potential. 
     
     
       41. A semiconductor dynamic amount sensor comprising:
   a silicon layer;        a silicon substrate located on the lower side of said silicon layer and electrically insulated from the silicon layer with an insulating layer provided on a peripheral portion of the silicon substrate interposed therebetween;        said silicon layer including:        a support beam having a mass portion which is horizontally displaceable;        stationary portions provided spaced apart from said support beam via an insulating groove and fixed to said silicon substrate; and        an insulating groove extending through the entire thickness of the silicon layer to insulate the support beam from stationery portions;        wherein said insulating layer forms a gap between the upper surface of said silicon substrate and the lower surface of said support beam and said mass portion.     
     
     
       42. The semiconductor dynamic sensor according to  claim 33 , wherein the sensor is able to detect a dynamic amount in a direction X and a dynamic amount in a direction Y. 
     
     
       43. The semiconductor dynamic sensor according to  claim 33 , wherein the sensor is able to detect a dynamic amount in a direction X, a dynamic amount in a direction Y, and a dynamic amount in a direction perpendicular to the direction X and the direction Y. 
     
     
       44. The semiconductor dynamic sensor according to  claim 41 , wherein the sensor is able to detect a dynamic amount in a direction X and a dynamic amount in a direction Y. 
     
     
       45. The semiconductor dynamic sensor according to  claim 41 , wherein the sensor is able to detect a dynamic amount in a direction X, a dynamic amount in a direction Y, and a dynamic amount in a direction perpendicular to the direction X and the direction Y.