Two section blue laser diode with reduced output power droop

Abstract

A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.

1. A semiconductor laser structure comprising:
 a sapphire substrate;  
 a plurality of III-V nitride semiconductor layers formed on said sapphire substrate such that at least one of said plurality of III-V nitride semiconductor layers forms an active layer;  
 a first active region formed in said active layer, including at least one junction between p-type and n-type material, for functioning as an amplifier;  
 a second active region formed in said active layer, including at least one junction between p-type and n-type material, for functioning as an optical modulator;  
 wherein a sufficient forward bias is applied to said first active region such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region, and the optical loss of said second active region is varied to cause lasing from said semiconductor laser structure.  
 
     
     
       2. The semiconductor laser structure of  claim 1  wherein said optical loss of said second region of said semiconductor laser structure is varied by applying a forward bias current to said second active region. 
     
     
       3. The semiconductor laser structure of  claim 1  wherein said optical loss of said second region of said semiconductor laser structure is varied by applying a reverse bias voltage to said second active region. 
     
     
       4. The semiconductor laser structure of  claim 1  further comprising
 a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.  
 
     
     
       5. The semiconductor laser structure of  claim 2  further comprising
 a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.  
 
     
     
       6. The semiconductor laser structure of  claim 3  further comprising
 a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.  
 
     
     
       7. The semiconductor laser structure of  claim 4  wherein said trench is formed in said plurality of III-V nitride semiconductor layers to said active layer. 
     
     
       8. The semiconductor laser structure of  claim 1  wherein said semiconductor laser structure emits light with a wavelength within a range including 360 nm to 650 nm. 
     
     
       9. A semiconductor laser structure comprising:
   a substrate;        a plurality of III-V nitride semiconductor layers formed on said substrate such that at least one of said plurality of III-V nitride semiconductor layers forms an active layer;        a first active region formed in said active layer, including at least one junction between p - type and n - type material, for functioning as an amplifier;        a second active region formed in said active layer, including at least one junction between p - type and n - type material, for functioning as an optical modulator;        wherein a sufficient forward bias is applied to said first active region such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region, and the optical loss of said second active region is varied to cause lasing from said semiconductor structure.     
     
     
       10. The semiconductor laser structure of  claim 9  wherein said optical loss of said second region of said semiconductor laser structure is varied by applying a forward bias current to said second active region. 
     
     
       11. The semiconductor laser structure of  claim 9  wherein said optical loss of said second region of said semiconductor laser structure is varied by applying a reverse bias voltage to said second active region. 
     
     
       12. The semiconductor laser structure of  claim 9  further comprising:
   a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.     
     
     
       13. The semiconductor laser structure of  claim 10  further comprising:
   a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.     
     
     
       14. The semiconductor laser structure of  claim 11  further comprising
   a trench formed in at least one of said plurality of III-V nitride semiconductor layers, said trench forming said first active region and said second active region.     
     
     
       15. The semiconductor laser structure of  claim 12  wherein said trench is formed in said plurality of III-V nitride semiconductor layers to said active layer. 
     
     
       16. The semiconductor laser structure of  claim 9  wherein said semiconductor laser structure emits light with a wavelength within a range including  360  nm to  650  nm.