Surface acoustic wave device and communication device

Abstract

A surface acoustic wave device including a LiTaO 3 substrate, and an interdigital transducer is provided on the LiTaO 3 substrate. The interdigital transducer includes as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W, and the interdigital transducer has a normalized film thickness H/λ of approximately 0.05 or less so as to excite a shear horizontal wave.

1. A surface acoustic wave device comprising:
 a LiTaO 3  substrate; and    an interdigital transducer provided on the LiTaO 3  substrate, said interdigital transducer containing as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W; wherein    said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 001  to approximately  0 . 05  so as to excite a shear horizontal wave.    
     
     
       2. A surface acoustic wave device according to  claim 1 , wherein said interdigital transducer includes Au as a major component,  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate, said interdigital transducer containing Au as a major component; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 001  to approximately  0 . 05  so as to excite a shear horizontal wave; and 
 said substrate has Euler angles of approximately ( 0 °,  125 °- 146 °,  0 °± 5 °).  
 
     
     
       3. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 002  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Ag as a major component, ; and  
 said substrate has Euler angles of approximately (0°, 125°-140°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 002  to  0 . 05  .  
 
     
     
       4. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 002  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Ta as a major component, ; and  
 said substrate has Euler angles of approximately (0°, 125°-140°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 002  to  0 . 05  .  
 
     
     
       5. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 005  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Mo as a major component, ; and 
 said substrate has Euler angles of approximately (0°, 125°-134°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 005  to  0 . 05  .  
 
     
     
       6. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 003  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Cu as a major component, ; and 
 said substrate has Euler angles of approximately (0°, 125°-137°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 003  to  0 . 05  .  
 
     
     
       7. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 006  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Ni as a major component, ; and 
 said substrate has Euler angles of approximately (0°, 125°-133°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 006  to  0 . 05  .  
 
     
     
       8. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 003  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Cr as a major component, ; and 
 said substrate has Euler angles of approximately (0°, 125°-147°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 003  to  0 . 05  .  
 
     
     
       9. A surface acoustic wave device according to  claim 1 , wherein  A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 003  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes Zn as a major component, ; and  
 said substrate has Euler angles of approximately (0°, 125°-138°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 003  to  0 . 05  .  
 
     
     
       10. A surface acoustic wave device according to  claim 1 , wherein A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 002  to approximately  0 . 05  so as to excite a shear horizontal wave; 
 said interdigital transducer includes W as a major component, ; and 
 said substrate has Euler angles of approximately (0°, 125°-138°, 0°±5°), and said normalized film thickness H/λ is within the range of approximately  0 . 002  to  0 . 05  .  
 
     
     
       11. A communication device including the surface acoustic wave device according to  claim 1 . 
     
     
       12. A communication device including the surface acoustic wave device according to  claim 2 . 
     
     
       13. A communication device including the surface acoustic wave device according to  claim 3 . 
     
     
       14. A communication device including the surface acoustic wave device according to  claim 4 . 
     
     
       15. A communication device including the surface acoustic wave device according to  claim 5 . 
     
     
       16. A communication device including the surface acoustic wave device according to  claim 6 . 
     
     
       17. A communication device including the surface acoustic wave device according to  claim 7 . 
     
     
       18. A communication device including the surface acoustic wave device according to  claim 8 . 
     
     
       19. A communication device including the surface acoustic wave device according to  claim 9 . 
     
     
       20. A communication device including the surface acoustic wave device according to  claim 10 . 
     
     
       21. A surface acoustic wave device comprising:
 a LiTaO 3    substrate; and    
 an interdigital transducer provided on the LiTaO 3    substrate, said interdigital transducer containing as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W; wherein    
 said interdigital transducer has a normalized film thickness H/λ within a range of approximately  0 . 001  to approximately  0 . 05 ;  
 the substrate has Euler angles of approximately ( 0 °,  136 ° to  147 °,  0 °± 5 °). 
 
     
     
       22. A surface acoustic wave device according to  claim 21 , wherein the substrate has Euler angles of approximately ( 0 °,  136 ° to  137 °,  0 °± 5 °). 
     
     
       23. A surface acoustic wave device according to  claim 21 , wherein the substrate has Euler angles of approximately ( 0 °,  136 . 5 °,  0 °± 5 °). 
     
     
       24. A surface acoustic wave device according to  claim 21 , wherein the normalized thickness H/λ is within a range of approximately  0 . 03  to approximately  0 . 05 . 
     
     
       25. A surface acoustic wave device according to  claim 21 , wherein the normalized thickness H/λ is approximately  0 . 04 . 
     
     
       26. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu;
 the normalized thickness H/λ is within a range of approximately  0 . 03  to approximately  0 . 05 ; and    the substrate has Euler angles of approximately ( 0 °,  136 ° to  137 °,  0 °± 5 °).   
     
     
       27. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu;
 the normalized thickness H/λ is approximately  0 . 04 ; and    the substrate has Euler angles of approximately ( 0 °,  136 ° to  137 °,  0 °± 5 °).   
     
     
       28. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu;
 the normalized thickness H/λ is within a range of approximately  0 . 03  to approximately  0 . 05 ; and    the substrate has Euler angles of approximately ( 0 °,  136 . 5 °,  0 °± 5 °).   
     
     
       29. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu;
 the normalized thickness H/λ is approximately  0 . 04 ; and    the substrate has Euler angles of approximately ( 0 °,  136 . 5 °,  0 °± 5 °).   
     
     
       30. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu; and
 the substrate has Euler angles of approximately ( 0 °,  136 ° to  137 °,  0 °± 5 °).   
     
     
       31. A surface acoustic wave device according to  claim 21 , wherein the major component is Cu; and
 the substrate has Euler angles of approximately ( 0 °,  136 . 5 °,  0 °± 5 °).