Method for programmable integrated passive devices

Abstract

A method for endowing an integrated passive device array structure with a programmable value during manufacturing. The method includes forming a substantially conductive first layer and forming a plurality of passive device array elements of the integrated passive device array structure above the substantially conductive first layer. The method further includes forming an insulating layer above the plurality of passive device array elements. There is further included selectively forming vais the insulating layer. The vias facilitate electrical connections between selected ones of the plurality of passive device array elements with a substantially conductive second layer subsequently deposited above the insulating layer.

What is claimed is:  
     
       1. A method for endowing an integrated passive device array structure with a programmable value during manufacturing, comprising: 
       forming a substantially conductive first layer;  
       forming a plurality of integrated passive device array elements of said integrated passive device array structure above said substantially conductive first layer, wherein some of the integrated passive array elements have a first value and others have a second value wherein the first value and the second value are different;  
       forming an insulating layer above said plurality of passive device array elements; and;  
       selectively forming vias in said insulating layer, said vias facilitating electric connection between selected ones of said plurality of passive device array elements with a substantially conductive second layer subsequently deposited above said insulating layer, thereby programming a pre- selected  value into the integrated passive device array structure.  
     
     
       2. The method of  claim 1  wherein said plurality of passive device array elements represent capacitors. 
     
     
       3. The method of  claim 2  wherein said capacitors have dielectric portions formed in an oxide layer, said oxide layer being disposed between said substantially conductive first layer and said insulating layer. 
     
     
       4. The method of  claim 3  wherein areas of said dielectric portions are selected to permit values of said plurality of said passive device array elements to relate to one another in a binary manner. 
     
     
       5. The method of  claim 1  wherein said selectively formning vias including selecting an appropriate mask to etch through said insulating layer. 
     
     
       6. A method for forming an integrated passive device array structure having a programmable value, comprising: 
       forming a substantially conductive first layer;  
       electrically coupling said substantially conductive first layer with a plurality of passive device array elements of said integrated passive device array structure, said plurality of passive device array elements being disposed above said substantially conductive first layer; and  
       electrically coupling selected ones of said plurality of passive device array elements with a substantially conductive second layer formed above said passive device array element to form said integrated passive device array structure, said selected ones of said plurality of passive device array elements representing a subset of said plurality of passive device array elements, thereby programming a value into the integrated passive device array structure.  
     
     
       7. The method of  claim 6  wherein a value of said integrated passive device array structure is substantially determined by an aggregate of values of said selected ones of said plurality of passive device array elements. 
     
     
       8. The method of  claim 6  wherein said selected ones of said plurality of passive device array elements are configured to be electrically coupled in parallel between said substantially conductive first layer and said substantially conductive second layer. 
     
     
       9. The method of  claim 6  further comprising forming said plurality of passive device array elements above said substantially conductive first layer, including 
       forming individual ones of said plurality of passive device array elements, values of said individual ones of said plurality of passive device array elements being related in a binary manner.  
     
     
       10. The method of  claim 6  further comprising forming said plurality of passive device array elements above said substantially conductive first layer, including 
       forming individual ones of said plurality of passive device array elements in an oxide layer, said oxide layer being disposed between said substantially conductive first layer and said substantially conductive second layer.  
     
     
       11. The method of  claim 10  further comprising: 
       forming an insulating layer above said oxide layer; and  
       furnishing each of said selected ones of said plurality of passive device array elements with a via through said insulating layer to permit said substantially conductive second layer to electrically couple with said each of said selected ones of said plurality of passive device array elements.  
     
     
       12. The method of  claim 11  wherein at least one of said plurality of passive device elements is selected to be electrically decoupled from said substantially conductive second layer. 
     
     
       13. The method of  claim 11  wherein said plurality of passive device array elements represent capacitors. 
     
     
       14. A method of forming a programmed integrated capacitor during manufacturing, the method comprising: 
       forming a substantially conductive first layer;  
       forming a plurality of integrated capacitor elements to create an integrated capacitor array structure, each of the integrated capacitor elements being electrically connected to the substantially conductive first layer;  
       forming an insulating layer that electrically isolates the plurality of integrated capacitor elements;  
       forming a substantially conductive second layer;  
       electrically coupling a selected number of the integrated capacitor elements to the substantially conductive to program a capacitance value into the integrated capacitor array structure.