Photoelectric conversion device

Abstract

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickness direction of the I-type layer.

What is claimed is:  
     
       1. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single-crystal semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction;  
       wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains oxygen at a concentration less than 5×10 19  atoms/cm 3 .  
     
     
       2. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction;  
       wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein be  the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains oxygen at a concentration less than 5×10 19  atoms/cm 3 .  
     
     
       3. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single-crystal semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction;  
       wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18  atoms/cm 3 .  
     
     
       4. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single-crystal semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity, an I-type non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction;  
       wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18  atoms/cm 3 .  
     
     
       5. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single-crystal semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction;  
       wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continusouly decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorus at a concentration less than 5×10 15  atoms/cm 3 .  
     
     
       6. A photoelectric conversion device comprising: 
       a substrate having a conductive surface;  
       a non-single-crystal semiconductor laminate member formed on the substrate; and  
       a conductive layer formed on the non-single-crystal semiconductor laminate member;  
       wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity type, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction;  
       wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident;  
       wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and  
       wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorous at a concentration less than 5×10 15  atoms/cm 3 .  
     
     
       7. A photoelectric conversion device according to any one of claims  1  to  6 , wherein the ratio of P-type impurity concentrations in the second non-single-crystal semiconductor layer at both ends thereof adjoining the first and third non-single-crystal semiconductor layers, respectively, is in the range of 1/10 to 1/100. 
     
     
       8. A photoelectric conversion device according to any one of claims  1 ,  3 , or  5 , wherein the substrate is light-transparent. 
     
     
       9. A photoelectric conversion device according to claim  8 , wherein the P-type impurity introduced into the first non-single-crystal semiconductor layer is boron. 
     
     
       10. A photoelectric conversion device according to claim  8 , wherein the concentration of the P-type impurity in the first non-single-crystal semiconductor layer is above 10 18  atoms/cm 3 , wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration in the range of 2×10 15  to 2×10 17  atoms/cm 3  at one end of the second layer adjoining the first non-single-crystal semiconductor layer, and wherein the ratio of the concentration of the P-type impurity in the second non-single-crystal semiconductor layer at the other end thereof adjoining the third non-single-crystal semiconductor to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100. 
     
     
       11. A photoelectric conversion device according to claim  10 , wherein the first non-single-crystal semiconductor layer has a larger energy band gap than does the second non-single-crystal semiconductor layer. 
     
     
       12. A photoelectric conversion device according to claim  11 , wherein the first non-single-crystal semiconductor layer is formed of Si x C 1−x  (  where 0<x< 1) , and wherein the second non-single crystal semiconductor layer is formed of silicon.    
     
     
       13. A photoelectric conversion device according to any one of claims  1 ,  4 , or  5 , wherein the P-type impurity introduced into the third non-single-crystal semiconductor layer is boron. 
     
     
       14. A photoelectric conversion device according to any one of claims  2 ,  4 , or  5 , wherein the concentration of the P-type impurity in the third non-single-crystal semiconductor layer is above 10 18  atoms/cm 3 , wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration in the range of 2×10 15  to 2×10 17  atoms/cm 3  at one end of the second layer adjoining the third non-single-crystal semiconductor layer, and wherein the ratio of the concentration of the P-type impurity in the second non-single-crystal semiconductor layer at the other end thereof adjoining the first non-single-crystal semiconductor to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100. 
     
     
       15. A photoelectric conversion device according to claim  14 , wherein the third non-single-crystal semiconductor layer has a larger energy band gap than does the second non-single-crystal semiconductor layer. 
     
     
       16. A photoelectric conversion device according to claim  15 , wherein the third non-single-crystal semiconductor layer is formed of Si x C 1−x  (  where 0<x< 1) , and wherein the second non-single-crystal semiconductor layer is formed of silicon.