Semiconductor device for driving a light valve

Abstract

The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

What is claimed is: 
     
       1. A semiconductor device comprising: a composite substrate having a stacked-layer structure comprising a support substance composed of a light-transmitting electrically insulating material, a light-shielding thin film, and a semiconducting thin film composed of single crystal silicon having a lattice defect density smaller than 500 defects/cm 2  and thermo-compression bonded on the support substrate with the light-shielding thin film interposed therebetween;   a transparent electrode formed on a portion of said composite substrate where at least said light-shielding thin film is removed; and   a switching element connected electrically to said transparent electrode and comprising a transistor having a channel region formed in said semiconducting thin film and a main gate electrode for controlling the conduction in said channel region, wherein the light-shielding thin film layer is disposed on the side opposite to said main gate electrode with respect to said channel region.   
     
     
       2. A semiconductor device according to claim 1, wherein said support substrate is made of aluminum oxide. 
     
     
       3. A semiconductor device according to claim 1, wherein the light-shielding thin film is formed on the support substrate, and an insulating film is formed on at least the light-shielding thin film. 
     
     
       4. A semiconductor device according to claim 3, including a ground film interposed between the support substrate and the light-shielding thin film. 
     
     
       5. A semiconductor device according to claim 10, wherein said ground film is made of oxynitrile. 
     
     
       6. A semiconductor device according to claim 4, wherein said ground film is made of silicon oxide, and said support substrate is made of quartz consisting mainly of silicon oxide. 
     
     
       7. A semiconductor device according to claim 3, wherein said insulating film is made of silicon nitride. 
     
     
       8. A semiconductor device according to claim 3, wherein said insulating film is made of silicon oxide. 
     
     
       9. A semiconductor device according to claim 3, wherein said insulating film is a multi-layer film consisting of silicon nitride and silicon oxide. 
     
     
       10. A semiconductor device according to claim 1, including an insulating film formed on the semiconducting thin film at the side of the support substrate, the light-shielding thin film being formed on the insulating film. 
     
     
       11. A semiconductor device according to claim 1, wherein said light-shielding thin film is made of an electrically conductive material. 
     
     
       12. A semiconductor device according to claim 11, wherein said light-shielding thin film is made of polysilicon. 
     
     
       13. A semiconductor device according to claim 1, wherein said light-shielding thin film contains at least one of germanium, silicon-germanium, and silicon. 
     
     
       14. A light valve device comprising: a composite structure having a stacked-layer structure comprising a support substrate comprised of a light-transmitting electrically insulating material, a light-shielding thin film, and a semiconducting thin film composed of a single crystal silicon having a lattice defect density smaller than 500 defects/cm 2  and thermo-compression bonded on the support substrate with the light-shielding thin film interposed therebetween;   a pixel electrode formed on .[.said semiconducting thin film.]. .Iadd.a portion of said composite substrate where at least said light-shielding thin film is removed .Iaddend.and a switching element formed .[.on.]. .Iadd.in .Iaddend.said semiconducting thin film for energizing said pixel electrode;   an opposed substrate disposed opposite to said composite substrate at a predetermined gap; and   an electro-optical material filling up said gap for undergoing optical change in accordance with energization of said pixel electrode.   
     
     
       15. A light valve device according to claim 14, wherein said switching element comprises a transistor having a channel region formed in said semiconductor thin film and a main gate electrode for controlling the conduction of said channel region, and said light-shielding thin film is provided on the side opposite to said main gate electrode with respect to said channel region.