RF transistor package and mounting pad

Abstract

An improved semiconductor package is provided wherein the mounting pad for the semiconductor is made from a material selected from the group consisting of aluminum nitride, diamond, alumina, and boron nitride.

I claim: 
     
       1. A semiconductor package having an input, output and a common terminal for connection therewith of respective terminals of a semiconductor which comprises: a support member;   a thermally conducting, electrically insulating pad deposited directly on said support member as a thin film without use of an intermediate material between said pad and said support member, said pad adapted to receive said semiconductor;   a semiconductor mounted on said pad; and   a protective lid,   said pad comprising . .a material selected from the group consisting of plasma deposited aluminum nitride,.!. vacuum deposited diamond. ., plasma deposited alumina, and plasma deposited boron nitride.!.. . .   
     
     
       2.  The package of claim 1 wherein said material is plasma deposited boron nitride..!.. .3. The package of claim 2 wherein said pad is between 7 and 8 mils thick..!.. .4. The package of claim 1 wherein said material is plasma deposited aluminum nitride..!.. .5. The package of claim 4 wherein said pad is between 7 and 8 mils thick..!.. .6. The package of claim 1 
     
     
        wherein said material is vacuum deposited diamond..!.7. The package of claim . .6.!. .Iadd.1 .Iaddend.wherein said pad is between 0.3 and 0.5 mils thick. . .8. The package of claim 1 wherein said material is plasma deposited alumina..!.. .9. The package of claim 8 wherein said pad is between 7 and 8 mils thick..!.