Active matrix liquid crystal display device and method for production thereof

Abstract

Metal-insulator-metal devices having an insulation layer between two metal layers wherein the relative dielectric constant of the insulation layer is less than the relative dielectric constant of oxidized Ta, and CCFxCLC/[(CCF+CLC)xCMIM]>2 where CCF is the capacitance of the second substrate, CLC is the capacitance of the liquid crystal material, and CMIM is the capacitance of the metal-insulator-metal elements and an active matrix liquid crystal display panel including the metal-insulator-metal devices are provided. A method for producing such an active matrix liquid crystal display panel is also provided.

What is claimed is: 
     
       1. An active matrix liquid crystal display device, comprising: (a) a first active substrate with a plurality of spaced apart row electrodes disposed on the first substrate;   (b) a second substrate with a plurality of column electrodes disposed on a second opposed substrate spaced apart from the first substrate to form a space therebetween, wherein the column electrodes oppose the row electrodes and are perpendicular thereto with a plurality of picture elements arranged in a matrix-like pattern of columns and rows at the intersections of the electrodes;   (c) a plurality of non-linear resistor switching elements, one disposed on one of the substrates adjacent to each picture element electrode and electrically connecting the picture element electrodes to the electrodes; and   (d) a liquid crystal material located in the space between the first and second substrates; wherein the non-linear resistor switching elements are metal-insulator-metal two-terminal elements having an insulation layer disposed between two metal layers, the relative dielectric constant of the insulation layer is less than 30, and the capacitance C CF  of the second substrate, the capacitance C LC  of the liquid crystal material, and the capacitance C MIM  of the metal-insulator-metal elements is governed by the relationship:     C.sub.CF ×C.sub.LC [(C.sub.CF +C.sub.LC)×C.sub.MIM ]>2.       
     
     
       2. The active matrix liquid crystal display device of claim 1, further including a color filter layer disposed on the column electrodes on the second substrate and wherein C CF  is the same as the capacitance of the color filter layer. 
     
     
       3. The active matrix liquid crystal display device of claim 1, further including a color filter layer disposed on the second substrate, the column electrodes on the color filter layer, and wherein the C CF  is the same as capacitance of the color filter layer which approaches a value of ∞. 
     
     
       4. The active matrix liquid crystal display device of claim 1, further including driving means for driving the active matrix liquid crystal display device in a normally black display mode or a normally white display mode. 
     
     
       5. The active matrix liquid crystal display device of claim 1, wherein the concentration of water in the liquid crystal material is less than 100 ppm. 
     
     
       6. The active matrix liquid crystal display device of claim 1, wherein the metal-insulator-metal two-terminal elements include a first metal layer on the substrate, an insulation layer formed on the first metal layer and a second metal layer on the insulating layer. 
     
     
       7. The active matrix liquid crystal display device of claim 6, wherein the first metal layer is Ta, the insulation layer is A-TaO x  with x being any number which forms a stable oxide of Ta, and A is at least one additional component which is capable of lowering the relative dielectric constant of the insulation layer to less than the relative dielectric constant of TaO x , and the second metal layer is Cr. 
     
     
       8. The active matrix liquid crystal display device of claim 7, wherein the relative dielectric constant of the insulation layer is ≦22. 
     
     
       9. The active matrix liquid crystal display device of claim 7, wherein the relative dielectric constant of the insulation layer is ≦10. 
     
     
       10. The active matrix liquid crystal display device of claim 7, wherein the additional component in the insulation layer is N or Si. 
     
     
       11. The active matrix liquid crystal display device of claim 10, wherein the insulating layer further includes an oxidated Ta and N derivative. 
     
     
       12. The active matrix liquid crystal display device of claim 7, wherein the additional component in the insulation layer is an oxide, nitride or oxynitride of Ta. 
     
     
       13. The active matrix liquid crystal display device of claim 7, wherein the crystal structure of the Ta first metal layer is α-Ta. 
     
     
       14. The active matrix liquid crystal display device of claim 7, wherein the additional component is N in a molar concentration of between about 5 and 25%. 
     
     
       15. The active matrix liquid crystal display device of claim 7, wherein each picture element electrode at the intersection of the row and column electrodes is divided into at least sections, and wherein metal-insulator-metal two-terminal element couples each picture element electrode section to the line electrode. 
     
     
       16. The active matrix liquid crystal display device of claim 15, wherein the additional component in the insulation layer of the metal-insulator-metal element is N or Si. 
     
     
       17. The active matrix liquid crystal display device of claim 7, wherein the Ta first metal layer includes nitrogen at a molar concentration of between about 5 and 45%. 
     
     
       18. The active matrix liquid crystal display device of claim 17, wherein the crystal structure of the Ta first metal layer is a mixture of α-Ta and Ta 2  N. 
     
     
       19. The active matrix liquid crystal display device of claim 17, wherein the specific resistivity of the Ta first metal layer is between 60 and 300 μohm.cm. 
     
     
       20. The active matrix liquid crystal display device of claim 6, including an insulation film of oxide, nitride or oxynitride formed on the first active substrate, the metal-insulator-metal two-terminal element formed on the insulation film. 
     
     
       21. The active matrix liquid crystal display device of claim 20, wherein the oxynitride film formed on the substrate is Ta oxynitride. 
     
     
       22. A metal-insulator-metal element in an acitve matrix substrate, comprising: a substrate;   an insulating underlying film including N-TaO x  on the substrate, wherein x is any number such that TaO x  is a stable oxide of Ta;   a first metal film of one of Ta and N-Ta on the underlying film;   an element insulation layer on the first metal film, the insulation layer including N-TaO x  having 5 to 25 atomic % N; and   a second metal film on the element insulation layer.   
     
     
       23. The metal-insulator-metal element of claim 22, wherein the first metal film includes N-Ta including about 5 to 45 atomic percent N. 
     
     
       24. The metal-insulator-metal element of claim 23, wherein the second metal film includes Cr. .Iadd. 
     
     
       25.  A matrix liquid crystal display device, comprising: (a) a first substrate and a plurality of first electrodes supported by the first substrate;   (b) a second substrate with a plurality of second electrodes supported thereby spaced apart from the first substrate to form a space therebetween, wherein the first electrodes oppose the second electrodes and a plurality of picture element electrodes are arranged in a matrix-like pattern on one of said substrates at the intersections of the first and second electrodes;   (c) a plurality of two-terminal switching elements, supported by the same substrate as the picture element electrodes, each of the two-terminal switching elements being coupled to one of the picture element electrodes for electrically connecting each of the picture element electrodes to one of the first or second electrodes; and   (d) a liquid crystal material located in the space between the first and second substrates; wherein the two-terminal switching elements are constructed with a non-linear resistor layer disosed between two conductive portions and the capacitance C CF  of the second substrate, the capacitance C LC  of the liquid crystal material, and the capacitance C MIM  of the two-terminal switching elements is governed by the relationship:     C.sub.CF ×C.sub.LC /[(C.sub.CF +C.sub.LC)×C.sub.MIM ]>2. .Iaddend..Iadd.26. The matrix liquid crystal display device of claim 25, further including a color filter layer supported by the one of the first or second electrodes and wherein C.sub.CF is the same as the capacitance of the color filter layer. .Iaddend..Iadd.27. The matrix liquid crystal display device of claim 25, further including a color filter layer supported by one of the first or second substrates, the first or second electrodes being on the color filter layer, and wherein the C.sub.CF is the same as the capacitance of the color filter layer which approaches a value of infinity. .Iaddend..Iadd.28. The matrix liquid crystal display device of claim 25, further including driving means for driving the matrix liquid crystal display device in a normally black display mode or a normally white display mode. .Iaddend..Iadd.29. The matrix liquid crystal display device of claim 25, wherein the concentration of water in the liquid crystal material is less than 100 ppm. .Iaddend..Iadd.30. The matrix liquid crystal display device of claim 25, wherein the two-terminal switching elements include a first conductive portion supported by the substrate, a non-linear resistor layer on the first conductive portion and a second conductive portion on the non-linear resistor layer. .Iaddend..Iadd.31. The matrix liquid crystal display device of claim 30, wherein the non-linear resistor layer is A-TaO.sub.x with x being any number which forms a stable oxide of Ta, and A is at least one additional component which is capable of lowering the relative dielectric constant of the non-linear resistor layer to less than the relative dielectric constant of TaO.sub.x. .Iaddend..Iadd.32. The matrix liquid crystal display device of claim 31, wherein the relative dielectric constant of the non-linear resistor layer is <30. .Iaddend..Iadd.33. The matrix liquid crystal display device of claim 31, wherein the relative dielectric constant of the non-linear resistor layer is ≦22.       
     
     
        .Iaddend..Iadd.     The matrix liquid crystal display device of claim 31, wherein the relative dielectric constant of the non-linear resistor layer is ≦10. .Iaddend..Iadd.35. The matrix liquid crystal display device of claim 31, wherein the additional component in the non-linear resistor layer is N or Si. .Iaddend..Iadd.36. The matrix liquid crystal display device of claim 31, wherein the non-linear resistor layer further includes an oxidated Ta and N derivative. .Iaddend..Iadd.37. The matrix liquid crystal display device of claim 31, wherein the additional component in the non-linear resistor layer is an oxide, nitride or oxynitride of Ta. .Iaddend..Iadd.38. The matrix liquid crystal display device of claim 31, wherein the first conductive portion is Ta having a crystal structure of α-Ta. .Iaddend..Iadd.39. The matrix liquid crystal display device of claim 31, wherein the additional component is N in a molar concentration of between about 5 and 25%. .Iaddend..Iadd.40. The matrix liquid crystal display device of claim 31, wherein each picture element electrode is divided into sections, and wherein a two-terminal element couples each picture element electrode section to one of the first or second electrodes. .Iaddend..Iadd.41. The matrix liquid crystal display device of claim 40, wherein the additional component in the non-linear resistor layer of the two terminal element is N or Si. .Iaddend..Iadd.42. The matrix liquid crystal display device of claim 31, wherein the first conductive portion is Ta and includes nitrogen at a molar concentration of 
     
     
        between about 5 and 45%. .Iaddend..Iadd.43.  The matrix liquid crystal display device of claim 42, wherein the crystal structure of the Ta first conductive portion is a mixture of α-Ta and Ta 2  N. .Iaddend..Iadd.44. The matrix liquid crystal display device of claim 42, wherein the specific resistivity of the Ta first conductive portion is between 60 and 300 μohm-cm. .Iaddend..Iadd.45. The matrix liquid crystal display device of claim 31, including an insulation film of oxide, nitride or oxynitride formed on one of the first or second substrates, the two-terminal elements being formed on the insulation film. .Iaddend..Iadd.46. The matrix liquid crystal display device of claim 45, wherein the oxynitride film formed on the substrate is Ta oxynitride. .Iaddend..Iadd.47. A non-linear resistor element in a matrix substrate, comprising: a substrate;   an insulating underlying film including N-TaO x  on the substrate, wherein x is any number such that TaO x  is a stable oxide of Ta;   a first conductive film of one of Ta and N-Ta on the underlying film;   an element non-linear resistor layer on the first conductive film, the non-linear resistor layer including N-TaO x  having 5 to 25 atomic % N; and   a second conductive film on the element non-linear resistor layer. .Iaddend..Iadd.48. The non-linear resistor element of claim 47, wherein the first conductive film includes N-Ta including about 5 to 45 atomic   
     
     
        percent N. .Iaddend..Iadd.49.  The non-linear resistor element of claim 48, wherein the second conductive film includes Cr. .Iaddend.