Layed photosensitive material and electrophotography comprising selenium, arsenic and tellurium

Abstract

A photosensitive material for electrophotography is provided, which comprises in sequence an electroconductive substrate, a carrier transport layer composed of a selenium-arsenic alloy, a carrier generation layer composed of a selenium-tellurium alloy and a surface coating layer composed of a selenium-arsenic alloy. The present invention further relates to a photosensitive material having a carrier transport layer that is doped with iodine as well.

I claim: .[.1. A photosensitive material for electrophotography, which comprises in sequence 
     
        coating layer is from 5 to 40 atopmic %..]. 6. .[.The.]. .Iadd.A .Iaddend.photosensitive material for electrophotography which comprises in sequence: (a) an electroconductive substrate;   (b) a carrier transport layer composed of a selenium-arsenic .[.ally.]. .Iadd.alloy .Iaddend.comprising .[.5.]. .Iadd.30 .Iaddend.to 40 atomic % arsenic;   (c) a carrier generation layer composed of a selenium-tellurium alloy comprising 20 to 40 atomic % tellurium; and   (d) a surface coating layer composed of a selenium-arsenic alloy comprising .[.5 to.]. 40 atomic % arsenic.Iadd., wherein the composition of the selenium-arsenic alloy in the carrier transport layer prevents cracking of the surface coating layer due to differences in the heat expansion coefficients of the surface coating layer and the carrier generation   
     
     
        layer.Iaddend.. .[.7.  The photosensitive material according to claim 6, wherein the carrier transport layer also contains from 100 to 10,000 ppm iodine..]. .[.8. The photosensitive material according to claim 1, wherein the concentration of arsenic in the carrier transport layer is at such a level to maintain crystallization resistance and high temperature stability..]. .[.9. The photosensitive material according to claim 8, wherein the concentration of tellurium in the carrier generation layer is not so high as to cause an increase in dark decay and promote crystallization of the layer..]. .[.10. The photosensitive material according to claim 9, wherein the concentration of arsenic in the surface coating layer is not so high as to decrease the hardness of the layer..].