Dynamic testing of electrical conductors

Abstract

A technique is described that permits direct and accurate evaluation of a thin film conductor's reliability which requires only a few hours to carry out. The technique involves a temperature ramp procedure which dynamically exposes a conductor operating under constant current stress to a linear (in time) rise in temperature. Changes in resistivity of the conductor provides kinetic data that is directly related to both the electromigration process and the reliability of the device.

We claim: 
     
       1. A method for determining the kinetic parameters of activation energy and pre-exponential factor which characterizes electromigration failure in a thin film conductor that is subject to high current densities at elevated temperatures, said method .[.includes.]. .Iadd.including .Iaddend.the steps of placing a thin film conductor in a .[.predetermined atmosphere.]. .Iadd.testing device.Iaddend.,   electrically stressing the thin film conductor, while in said .[.atmosphere.]. .Iadd.testing device.Iaddend., by applying a uniform current thereto,   heating the stressed conductor to increase the conductor temperature at a linear rate with respect to time,   measuring changes in resistance of the current stressed conductor as it is being heated at a linear rate,   reducing the measured changes in resistance by those changes due to the temperature dependent components of resistance to determine the changes in resistance produced by the electromigration failure process,   determining the activation energy and pre-exponential factor by relating the measured changes in resistance with respect to time produced by the electromigration failure process to the following zeroth order rate expression:   1/R.sub.o dR/dt=A exp (-Q/kT)     where: R o  is the initial resistance of the thin film conductor, dR/dt is the variation in the conductor resistance produced by the electromigration process, Q is the activation energy for the process, A is the pre-exponential for the process, k is Boltzmann's constant and T is absolute temperature.     
     
     
       2. The method of claim 1 that further includes the step of annealing the .[.unstressed.]. conductor prior to heating the said conductor at a linear rate. 
     
     
       3. The method of claim 1 including the further step of determining the activation energy for the electromigration process by plotting:   1n [T.sup.-2 (ΔR.sub.em /R.sub.o)]vs 1/T     where: ΔR em  is the change in resistance of the conductor produced by the electromigration process.   
     
     
       4. The method of claim 3 wherein the activation energy of the process is determined from the plot according to the relationship   Q=-ks     where: s is the slope of the plotted line.   
     
     
       5. The method of claim 3 that includes the further step of determining the pre-exponential factor from the relationship:   A=-βs exp I     where: β is the heating rate, and I is the intercept of the plotted line.   
     
     
       6. The method of claim 5 that includes the further step of determining the life expectancy of the conductor by the relationship: ##EQU7## where: t is time in seconds. 
     
     
       7. Apparatus for testing a thin film conductor to determine the kinetic parameters of activation energy and pre-exponential factor which lead to electromigration failure in the conductor that includes .[.a hermetically sealed chamber having.]. means to support a thin film conductor .[.in said chamber.].,   .[.means to maintain a controlled atmosphere within the chamber.].   heating means to increase .[.the temperature of the atmosphere within the chamber.]. at a linear rate .[.whereby.]. the temperature of the conductor .[.is also heated at a linear rate.].,   electrical means for maintaining a constant current flow through the conductor as .[.is.]. .Iadd.the letter .Iaddend.is being heated .Iadd.by said heating means .Iaddend.at said linear rate,   first means to measure the changes in resistance of the conductor as the temperature thereof is changed .Iadd.by said heating means .Iaddend.at a linear rate over a preselected given period of time, and   said means to measure the change in temperature of the .[.atmosphere within the chamber.]. .Iadd.thin film conductor .Iaddend.whereby the increase changes in the conductor resistance due to the electromigration failure process can be determined by relating said changes to an activation energy and pre-exponential factor, wherein a record of the changes in resistance over said given time period .[.time.]. is obtained.   
     
     
       8. The apparatus of claim 7 which further includes a recording means operatively connected to said first and second means for providing the record of the changes in resistance and temperature over the given .Iadd.time .Iaddend.period .[.of time..]. 
     
     
       9. The apparatus of claim 7 wherein .[.the.]. .Iadd.said means to support the thin film conductor includes a hermetically sealed chamber, and .Iaddend.means to control the chamber atmosphere .[.further.]. .Iadd.which .Iaddend.includes valve means for regulating pressure of the atmosphere within the chamber. 
     
     
       10. The apparatus of claim 7 wherein said heating means includes an electrical heater .[.that is wrapped about the outside of the chamber.]..