USRE30556EExpiredUtility

Indicating element and method of manufacturing same

Priority: Nov 22, 1974Filed: Jan 26, 1979Granted: Mar 24, 1981
Est. expiryNov 22, 1994(expired)· nominal 20-yr term from priority
H10H 29/14H10H 20/831G09F 2013/222G09F 13/22
1
PatentIndex Score
0
Cited by
9
References
1
Claims

Abstract

An indicating element comprises a base plate of P-type or N-type epitaxial crystals, a N-type or P-type indicating layer of diffusion or growth planarly formed on the base plate, and an electrode layer provided on the planar indicating layer and having a desired pattern thereon. The element is manufactured by forming an electrode on a rear surface of the base plate, forming the N-type or P-type planar indicating layer on an upper surface of the base plate by means of diffusion or crystal growth, and mounting on the planar indicating layer the electrode layer having the desired pattern thereon.

Claims

exact text as granted — not AI-modified
What is claimed is:  .[.1. An indicating element comprising: 
     
        pattern..]. 2. An indicating element according to claim .[.1,.]. .Iadd.21, .Iaddend.wherein said electrode mask layer (3) has a large peripheral portion (3'--FIGS. 3 and 4) around said planar layer (2) and over said protective layer (4) such that errors in bonding an electrode thereto over said protective layer do not damage the portion of said electrode mask layer defining said indicating pattern, and comprising an electrical 
     
     
        conductor bonded on said peripheral portion. 3. An indicating element according to claim .[.1.]. .Iadd.21.Iaddend., including a plurality of electrode mask layers on .Iadd.at least one of .Iaddend.said planar .[.layer.]. .Iadd.layers.Iaddend., each electrode mask layer having light blocking portions defining a respective predetermined indicating pattern. .[.4. An indicating element according to claim 1, including two of said planar layers provided on respective opposite sides of said base plate; and respective protective layers over the exposed junction portions between said base plate and said planar layers, whereby the indication is performed on both opposite surfaces of the indicating element..]. .[.5. An indicating element according to claim 1, wherein said semiconductor base plate comprises transparent material and said first electrode comprises a further electrode mask layer disposed on the surface of said base plate opposite to the surface on which said planar layer is disposed, said further electrode mask layer having light blocking portions defining a predetermined pattern, whereby the indication is obtained on two surfaces 
     
     
        of the indicating element..]. 6. An indicating element according to claim .[.1.]. .Iadd.21.Iaddend., wherein said first conductivity type is P-type 
     
     
        and said second conductivity type is N-type. 7. An indicating element according to claim .[.1.]. .Iadd.21.Iaddend., wherein said first conductivity type is N-type and said second conductivity type is P-type. 
     
     
           An indicating element according to claim .[.1.]. .Iadd.21.Iaddend., wherein said planar .[.layer is a diffusion layer.]. .Iadd.layers are 
     
     
        diffusion layers .Iaddend.formed in said base plate. 9. An indicating element according to claim .[.1.]. .Iadd.21.Iaddend., wherein said planar .[.layer is a growth layer.]. .Iadd.layers are growth layers 
     
     
        .Iaddend.formed in said base plate. 10. An indicating element according to claim 3, further comprising means for selecting at least one of said 
     
     
        indicating patterns of said plurality of electrode layers. 11. An indicating element according to claim 10, wherein said selecting means comprises respective electrodes coupled to said plurality of electrode layers which are adapted to be optionally selected to provide indication of their respective indicating patterns.  .[.12. An indicating element according to claim 1, wherein said first electrode is disposed on the rear surface of said base plate which is opposite to the surface of which said planar layer is provided..]. .[.13. An indicating element according to claim 4, wherein said first electrode is provided on an edge surface of the said base plate..]. .[.14. An indicating element according to claim 13, wherein said first electrode is provided around the complete periphery of said base plate..]. .[.15. An indicating element according to claim 4, comprising respective electrode mask layers provided on said planar layers, said respective electrode mask layers having respective light blocking portions defining respective predetermined indicating 
     
     
        patterns..]. 16. An indicating element according to claim .[.15,.]. .Iadd.21, .Iaddend.wherein said predetermined indicating patterns are different patterns.  .[.17. An indicating element according to claim 5, wherein said predetermined patterns defined by said electrode mask layer 
     
     
        and by said further electrode mask layer are different patterns..]. 18. An indicating element according to claim .[.5.]. .Iadd.21 .Iaddend.further comprising respective electrodes connected to peripheral portions of said electrode mask layers for application of electric power to said luminescent diode.  .[.19. An indicating element according to claim 1 further comprising an electrode (7) connected to said electrode mask layer 
     
     
        (3) over a portion of said protective layer (4)..]. 20. An indicating element comprising: a transparent semi-conductor base plate (1) of a first conductivity type;   a second semiconductor layer (2) of a second conductivity type opposite to that of said first conductivity type disposed on said transparent base plate (1), said base plate (1) and second semiconductor layer forming a luminescent diode;   a first electrode mask layer (3) provided on said second layer (2), said first electrode mask layer having light blocking portions over a substantial portion of said second layer (2) which define a predetermined indicating pattern, said first electrode mask layer having void portions over the area of said indicating pattern;   a second electrode mask layer (5) on a surface of said base plate opposite the junction between said base plate and said second layer, said second electrode mask layer (5) having light blocking portions over a substantial portion of said base plate (1) which define a second predetermined indicating pattern, said electrode mask layer having void portions over the area of said second indicating pattern;   whereby when electric power is applied across said first and second electrode mask layers light is emitted from said luminescent diode and is blocked by said light blocking portions of said electrode mask layers and is passed through void portions thereof to display said predetermined patterns. .Iadd. 21. An indicating element comprising:   a semiconductor base plate (1) having opposing front and rear surfaces, said semiconductor base plate being of a first conductivity type;   a first planar semiconductor layer (2) of a second conductivity type opposite to that of said first conductivity type embedded in one of said front and rear surfaces of said base plate (1) to define an exposed junction therebetween, said base plate (1) and said first planar layer (2) forming a luminescent diode;   a first protective layer (4) over the exposed junction between said base plate (1) and first planar layer (2);   
     
     
       a first electrode mask layer (3) on said first planar layer (2), base plate (1) and first protective layer (4), said first electrode mask layer (3) defining a predetermined human intelligence conveying and information carrying indicating pattern, said first electrode mask layer having void portions and light blocking portions, said light blocking portions extending around the periphery of said first planar layer (2) and also extending inwardly over a substantial interior surface portion of said first planar layer (2) to define the boundaries of said predetermined indicating pattern; a second planar semiconductor layer (20) of said second conductivity type on the other of said front and rear surfaces of said base plate (1) and defining an exposed junction with said base plate, said base plate (1) and said second planar layer (20) forming a luminescent diode;   a second protective layer (4') over the exposed junction between said base plate (1) and said second planar layer (20); and   a second electrode mask layer (30) on said second planar layer (20), base plate (1) and second protective layer (4'), said second electrode mask layer (30) defining a predetermined human intelligence conveying and information carrying indicating pattern, said second electrode mask layer having void portions and light blocking portions, said light blocking portions extending around the periphery of said second planar layer (20) and also extending inwardly over a substantial interior surface portion of said second planar layer (20) to define the boundaries of said last-mentioned predetermined indicating pattern;   whereby when electric power is applied across said first and second electrode mask layers (3,30) light is emitted from said luminescent diode at the surfaces of said first and second planar layers (2,20), said light being blocked by said light blocking portions of said electrode mask layers and passed through said void portions to display said predetermined   
     
     
        indicating patterns. .Iaddend. .Iadd. 22.  An indicating element according to claim 21, comprising first and second electrical conductors on peripheral portions of said first and second electrode mask layers, respectively. .Iaddend..Iadd. 23. An indicating element according to claim 21, comprising a common electrode on the side surfaces of said base plate around the periphery of said base plate, whereby said indicating patterns may be selectively displayed by selectively applying electric power between said common electrode and an electrode mask layer. .Iaddend..Iadd. 24. An indicating element comprising: a transparent semiconductor base plate of a given conductivity type;   a semiconductor diffusion layer of a conductivity type opposite to that of said base plate formed on said base plate to define a light emitting junction therebetween, said base plate and said diffusion layer respectively defining opposite substantially planar surfaces on opposite sides of said junction and forming a luminescent diode;   a first electrode mask layer on said planar surface of said diffusion layer, said first electrode mask layer defining a predetermined human intelligence conveying and information carrying indicating pattern on said diffusion layer, said first electrode mask layer having void portions and light blocking portions, said light blocking portions extending around the periphery of said diffusion layer and also extending inwardly over a substantial interior surface portion of said diffusion layer to define the boundaries of said predetermined indicating pattern on said diffusion layer;   a second electrode mask layer on said planar surface of said transparent semiconductor base plate, said second electrode mask layer defining a predetermined human intelligence conveying and information carrying indicating pattern on said base plate, said second electrode mask layer having void portions and light blocking portions, said light blocking portions extending around the periphery of said base plate and also extending inwardly over a substantial interior surface portion of said base plate to define the boundaries of said last-mentioned predetermined indicating pattern on said base plate;   whereby when electric power is applied across said first and second electrode mask layers, light is emitted from said luminescent diode at said planar surfaces of said diffusion layer and base plate and is blocked by said light blocking portions of said respective electrode mask layers and is passed through said void portions to simultaneously display said respective predetermined indicating patterns on the two respective opposite surfaces of said indicating element. .Iaddend.

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