GaAs1-x Px electroluminescent device doped with isoelectronic impurities

Abstract

The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs 1-x P x , doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

We claim: 
     
       1. An article of manufacture comprising an electroluminescent .Iadd.vapor-grown epitaxial .Iaddend.material having the formula GaAs 1-x  P x , wherein x has a value within the range of .[.>0.2 and >1.0.]. .Iadd.0.4 to 0.9.Iaddend., containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms and impurity atoms of conductivity type opposite to that of said first type to define a P-N junction in said material .Iadd.and means for making ohmic contact to opposite sides of said P-N junction..Iaddend. 
     
     
       2. Article according to claim 1 wherein said isoelectronic impurity atoms are nitrogen atoms. .[.3. Article according to claim 1 wherein x has a 
     
     
        value within the range of 0.3 to <1.0..]. 4. Article according to claim 1 
     
     
        wherein x has a constant value throughout said material. 5. Article according to claim 1 wherein x has a value which continuously changes with 
     
     
        distance from the lower surface to the upper surface of said material. 6. Article according to claim 4 having an additional region extending below and contiguous with the lower surface of said material, wherein the 
     
     
        value of x continuously changes with distance from said lower surface. 7. Article according to claim 6 wherein said material is in epitaxial 
     
     
        relationship with a suitable substrate. 8. Article according to claim 7 
     
     
        wherein said substrate is GaP. 9. Article according to claim 7 wherein said substrate is GaAs. .[.10. Article according to claim 4 further including ohmic contacts and leads to an external circuit attached to 
     
     
        surfaces of opposite conductivity type of said material..]. .[.11. Article according to claim 5 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity type of said material..]. .[.12. Article according to claim 8 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity of said material..]. .[.13. Article according to claim 9 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity type of said material..]. 
     
     
            Article according to claim 1 wherein said impurity atoms of first 
     
     
        conductivity type are of N-type conductivity. 15. Article according to claim 1 wherein said isoelectronic atoms are present through said 
     
     
        material. 16. Article according to claim 15 wherein said impurity atoms of first conductivity type are of P-type conductivity. .Iadd. 17. Article according to claim 1 wherein said electroluminescent material produces an average brightness of at least 600 foot-Lamberts at a current density of 20 amperes/square centimeter over the entire range of said x values from 0.4 to 0.9..Iaddend..Iadd. 18. Article according to claim 1 wherein said isoelectronic impurity atoms are present only in the region of said P-N junction..Iaddend..Iadd. 19. An article of manufacture comprising an electroluminescent vapor-grown epitaxial material having the formula GaAs 1-x  P x , wherein x has a value within the range of 0.4 to 0.6, containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms of a conductivity type opposite to that of said first type to define a P-N junction in said material and means for making ohmic contact to opposite sides of said P-N junction, said electroluminescent material being red light-emitting and producing an average brightness of at least 600 foot-Lamberts at a current density of 20 amperes/square centimeter over the entire range of said x values from 0.4 to 0.6..Iaddend..Iadd. 20. An article of manufacture comprising an electroluminescent vapor-grown epitaxial material having the formula GaAs 1-x  P x , wherein x has a value within the range of 0.6 to 0.9, containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms of a conductivity type opposite to that of said first type to define a P-N junction in said material and means for making ohmic contact to opposite sides of said P-N junction, said electroluminescent material being yellow light-emitting and producing an average brightness of at least 600 foot-Lamberts at a current density of 20 amperes/square centimeter over the entire range of said x values from 0.6 to 0.9..Iaddend. .Iadd. 21. An article of manufacture comprising an electroluminescent vapor-grown epitaxial material having the formula GaAs 1-x  P x , wherein x has a value within the range of 0.4 to about 0.9), containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms of a conductivity type opposite to that of said first type to define a P-N junction in said material and means for making ohmic contact to opposite sides of said P-N junction, said electroluminescent material being yellow or orange light-emitting and producing an average brightness of at least 600 foot-Lamberts at a current density of 20 amperes/square centimeter over the entire range of said x values from 0.4 to about 0.92. .Iaddend. .Iadd. 22. An article of manufacture comprising an electro-luminescent vapor-grown epitaxial material having the formula GaAs 1-x  P x , wherein x has a value within the range of 0.6 to about 0.92 containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms of a conductivity type opposite to that of said first type to define a P-N junction in said material and means for making ohmic contact to opposite sides of said P-N junction, said electroluminescent material being yellow light-emitting and producing an average brightness of at least 600 foot-Lamberts at a current density of 20 amperes/square centimeter over the entire range of said x values from 0.6 to about 0.92.