Single-wall domain arrangement

Abstract

The transfer of a domain from one channel to another in a single-wall domain memory is effected by a transfer loop into which a domain is moved by a field from a pulsed conductor and from which a domain exits in response to a magnetic field rotating in the plane of the layer in which domains move. The transfer loop includes two "exit-entrance" positions associated with the two channels between which transfer occurs. The exit of a domain from the transfer loop may be aided by a pulsed conductor also.

What is claimed is: 
     
       1. A magnetic arrangement comprising a layer of material in which single-wall domains can be moved, a pattern of magnetically soft elements for defining a path for moving a domain therealong to a first or a second position in response to a reorienting in-plane field, said elements also defining first and second propagation channels associated with said first and second positions, respectively, said elements at each of said first and second positions being adapted such that a domain moving in said path to one of said first or second positions moves into the associated channel in response to said in-plane field, and first and second conductor means coupled to said layer at said first and second positions for selectively moving a domain from said first and second channels respectively into said path. 
     
     
       2. A magnetic arrangement comprising a layer of material in which single-wall domains can be moved, a pattern of magnetically soft elements for defining a path for moving a domain therealong to a first or a second position in response to a reorienting in-plane field, said elements also defining first and second propagation channels associated with said first and second positions, respectively, said elements at each of said first and second positions being adapted such that a domain moving in said path to one of said first or second positions moves into the associated channel in response to said in-plane field, first conductor means coupled to said layer at one of said first or second positions for selectively moving a domain from said first or second channels there into said path, and second conductor means coupled to said layer at the other of said first or second positions for selectively moving a domain from said path into said first or second channel. 
     
     
       3. An arrangement in accordance with claim 2 including means for pulsing said first and second conductors in a timed sequence for moving a domain to and removing a domain from said path. 
     
     
       4. An arrangemnt in accordance with claim 2 wherein the elements defining said path are of a geometry such that two cycles of aid rotating field move a domain from said first to said second position and said pulses on said first and second conductors are timed one and one-half cycles apart. 
     
     
       5. An arrangement in accordance with claim 4 wherein said path comprises first and second legs between said first and second positions, said elements defining said legs being of a geometry to move a domain introduced at said first and second positions along said first and second legs, respectively. 
     
     
       6. An arrangement in accordance with claim 2 wherein the elements defining said path are of a geometry such that one cycle of said rotating field moves a domain from said first to said second position and said pulses on said first and second conductors are timed one-half cycle apart. 
     
     
       7. An arrangement in accordance with claim 6 wherein said path comprises first and second legs between said first and second positions, said elements defining said legs being of a geometry to move a domain introduced at said first and second positions along said first and second legs, respectively. 
     
     
       8. An arrangement in accordance with claim 2 wherein the elements defining said path and said first or second channels at said first or second positions respectively define domain positions corresponding to first and second orientations of said field in each cycle thereof, also including auxiliary elements at said first and second positions for defining a domain position intermediate said domain positions for said first and second orientations of said field. 
     
     
       9. An arrangement in accordance with claim 2 wherein said path is a closed loop. 
     
     
       10. An arrangement in accordance with claim 9 wherein each of said first and second channels is a closed loop for recirculating information thereabout. 
     
     
       11. A magnetic memory including a plurality of arrangements each in accordance with claim 10 wherein said first conductor means includes an electrical conductor coupled to said layer at one of said first or second positions of each of said arrangements. 
     
     
       12. A magnetic memory in accordance with claim 11 also including a second electrical conductor coupled to the other of said first or second positions of each of said arrangements. .Iadd. 13. A rapid access cylindrical magnetic domain memory comprising a plurality of main storage loops and an auxiliary loop, each loop being formed of a plurality of bars of highly permeable material in close proximity to a thin magnetic cylindrical domain sustaining platelet,   a magnetic domain sustaining structure including means for producing a bias magnetic field applied transverse to a surface of the platelet for stable cylindrical domains and means producing a rotating magnetic field within the plane of the thin platelet to drive the cylindrical domains from bar to bar,   said auxiliary loop having at least partially separate infeed and outfeed transfer tracks with one of said infeed and one of said outfeed transfer tracks being coupled to each of the main storage cylindrical domain circulating loops,   said auxiliary loop having a number of bit positions selected to accommodate a predetermined whole multiple of the number of bits transferred from each main storage loop, and further having a number of bit positions selected to provide domain position synchronization between the auxiliary loop and each main storage loop, and   a cylindrical domain detector arranged to detect domains in the auxiliary loop..Iaddend..Iadd. 14. The rapid access cylindrical magnetic domain memory as claimed in claim 13 and further including   a conductor pattern deposited on the platelet with selective proximity to predetermined bars to form domain path switches actuated by current pulses applied to the conductor pattern..Iaddend.