USRE28928EExpiredUtility
Integrated circuit comprising supply polarity independent current injector
Priority: Jan 8, 1972Filed: Oct 14, 1975Granted: Aug 10, 1976
Est. expiryJan 8, 1992(expired)· nominal 20-yr term from priority
H10D 84/65H10D 84/63H03K 19/091
8
PatentIndex Score
3
Cited by
6
References
10
Claims
Abstract
Integrated circuit suitable for any desired supply polarity by means of a rectifier bridge two rectifiers of which are designed as current injectors.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. An integrated circuit comprising: a. a semiconductor body comprising semiconductor circuit elements and a carrier zone, b. means for supplying electrical potential to said semiconductor body, c. a rectifier bridge disposed at said semiconductor body and comprising bridge arms, said bridge comprising two respective first rectifier elements disposed in said carrier zone and .[.said rectifier.]. included in respective first ones of said bridge arms to form part of said bridge, said rectifier elements being electrically connected between said potential supplying means and said carrier zone, d. further rectifier elements disposed in second ones of said bridge arms, and e. means for automatically ensuring the appropriate supply current polarity to said semiconductor elements, said means comprising current injector elements respectively disposed in said second bridge arms and being in current supply relationship with said circuit elements.
2. An integrated circuit as claimed in claim 1, wherein said current injector elements comprise lateral transistors.
3. An integrated circuit as claimed in claim 1, wherein said circuit elements comprise circuit zones for receiving current from respective said current injector elements and said current injector elements comprise a zone having an edge area substantially larger than that of each of said circuit element zones.
4. An integrated circuit as claimed in claim 1, wherein said first rectifiers comprise vertical transistors disposed in said carrier zone and that respectively comprise collector regions, emitter regions that are connected to said potential supply means .Iadd.and base regions that are cross-connected to said supply means .Iaddend.through resistors.
5. An integrated circuit as claimed in claim 4, wherein said resistors comprise extensions of said base zones of said vertical transistors provided in said carrier zone.
6. An integrated circuit as claimed in claim 5, wherein said extensions further comprise a part of said current injector elements.
7. An integrated circuit as claimed in claim 5, wherein said resistors comprise extensions of said emitter zones of said vertical transistors, said extensions projecting into said base zones.
8. An integrated circuit as claimed in claim 1, wherein said first rectifiers comprise vertical transistors provided in said carrier zone and disposed proximity to said current injector elements so as to be supplied with the required base currents thereby.
9. An integrated circuit as claimed in claim 1, wherein said current injector element and the zones of said circuit elements to be supplied with current are laterally surrounded by a highly doped zone, so as to prevent injection currents from leaking away.
10. An integrated circuit as claimed in claim 1 suitable for alternating-current supply, wherein a capacitor element is connected between an injecting zone of the current injector element and the carrier zone. .Iadd. 11. An integrated circuit, comprising: a. at least one circuit element; b. bias supply terminals for biasing said circuit element; and c. means for automatically ensuring the appropriate polarity bias to said circuit element, said means comprising a bridge rectifier circuit electrically connected to said terminals and that comprises in each of two arms thereof a current injector coupled to said bias receiving circuit element, said current injectors comprising respective rectifying junctions, which, upon forward biasing, can inject carriers from a region outside said circuit element and cause collection of carriers by an active zone of said circuit element so as to bias said circuit element. .Iaddend..Iadd. 12. An integrated circuit as in claim 11, wherein said bridge rectifier circuit further comprises first rectifiers in respective other arms thereof. .Iaddend..Iadd. 13. An integrated circuit as in claim 12, wherein said first rectifiers comprise respective vertical n,p,n, transistor structures and each of said current injectors comprises a lateral pnp, transistor, said vertical transistor structures having their respective base regions electrically connected to their respective collector regions. .Iaddend. .Iadd. 14. An integrated circuit as in claim 13, wherein said integrated circuit comprises a semiconductor body comprising a carrier zone that forms part of said rectifying junction and that comprises said collector regions of said vertical transistor structures..Iaddend..Iadd. 15. An integrated circuit as in claim 13, wherein said vertical transistor structures have common base regions and common collector regions. .Iaddend..Iadd. 16. An integrated circuit as in claim 13, wherein said supply terminals are connected to respective emitter regions of said vertical transistor structures and to respective emitter regions of said lateral transistors. .Iaddend..Iadd. 17. An integrated circuit as in claim 13, wherein each said supply terminal is connected to a respective said emitter region of said vertical transistor structures and cross-connected through a resistor to a respective said base region of said vertical transistor. .Iaddend..Iadd. 18. An integrated circuit as in claim 11, wherein each of said current injectors comprises at least three successive regions separated from each other by rectifying junctions, said regions respectively constituting an injecting region that is separated from said circuit element by at least one rectifying junction, an intermediate region adjoining said injecting region and a collecting region adjoining said intermediate region. .Iaddend. .Iadd. 19. An integrated circuit as in claim 18, wherein said collecting region comprises said active zone of said circuit element, said active zone being separated from said injecting region by at least two rectifying junctions and being biased by said supplied current. .Iaddend..Iadd. 20. An integrated circuit as in claim 18, wherein said collecting region comprises an intermediate injector zone disposed between said injecting region and said zone of said further circuit element. .Iaddend..Iadd. 21. An integrated circuit as in claim 18, wherein said collecting region forms a collector zone of a first transistor and an emitter zone of a second transistor, wherein said active zone comprises the collector zone of said second transistor. .Iaddend..Iadd. 22. An integrated circuit comprising a circuit element a rectifier bridge that comprises plural rectifiers included in respective arms of said bridge, a number of said rectifiers comprising current injector means for supplying current to a circuit element and biasing a zone of said element so that said element is rendered conductive. .Iaddend..Iadd. 23. An integrated circuit comprising: a. a circuit element; b. a semiconductor element comprising a carrier zone; c. plural supply terminals; d. means for ensuring the appropriate supply polarity to said circuit element, said means comprising a rectifier bridge that includes plural rectifiers electrically connected between said carrier zone and respective said supply terminals and located in respective arms of said bridge; and e. said rectifier bridge further comprising p,n junctions formed with said carrier zone and located in respective other bridge arms, said p,n junctions comprising a current injector for supplying current to said
further circuit element. .Iaddend..Iadd. 24. An integrated circuit as in claim 17, wherein said resistors comprise extensions of said vertical transistor emitter regions which form islands within said vertical transistor base regions. .Iaddend.Join the waitlist — get patent alerts
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