Methods of packaging semiconductor devices and packaged semiconductor devices

Abstract

Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes providing a semiconductor device comprising an integrated circuit die, connectors disposed over the integrated circuit die, and an insulating material disposed over the connectors and the integrated circuit die. The insulating material is removed from over corner regions of the integrated circuit die, and a molding material is disposed over the insulating material and the integrated circuit die. A top portion of the molding material and the insulating material is removed to expose the connectors.

What is claimed is: 
     
       1. A method of packaging a semiconductor device, the method comprising:
 providing a semiconductor device comprising an integrated circuit die, a plurality of connectors disposed over the integrated circuit die, and an insulating material disposed over the plurality of connectors and the integrated circuit die; 
 removing the insulating material from over corner regions of the integrated circuit die; 
 after removing the insulating material, disposing a molding material over the insulating material and the integrated circuit die; and 
 removing a top portion of the molding material and the insulating material to expose the plurality of connectors. 
 
     
     
       2. The method according to  claim 1 , wherein removing the top portion of the molding material and the insulating material comprises a grinding process. 
     
     
       3. The method according to  claim 1 , further comprising coupling the integrated circuit die to a carrier, before disposing the molding material, and wherein disposing the molding material further comprises disposing the molding material around the integrated circuit die. 
     
     
       4. The method according to  claim 1 , wherein removing the insulating material from over the corner regions of the integrated circuit die comprises a photolithography process. 
     
     
       5. The method according to  claim 1 , further comprising forming an interconnect structure over the molding material, the insulating material, and the plurality of connectors, wherein portions of the interconnect structure are coupled to the plurality of connectors. 
     
     
       6. The method according to  claim 5 , wherein the plurality of connectors comprises a plurality of first connectors, and wherein the method further comprises coupling a plurality of second connectors to the interconnect structure. 
     
     
       7. The method according to  claim 5 , wherein forming the interconnect structure comprises forming fan-out regions for the plurality of connectors. 
     
     
       8. A method of packaging a semiconductor device, the method comprising:
 providing a wafer including a plurality of integrated circuit dies, a plurality of connectors disposed over the plurality of integrated circuit dies, and an insulating material disposed over the plurality of connectors and the plurality of integrated circuit dies; 
 removing the insulating material from corner regions of the plurality of integrated circuit dies using a photolithography process; 
 singulating the plurality of integrated circuit dies; 
 coupling one of the plurality of integrated circuit dies to a carrier; 
 after removing the insulating material from corner regions, disposing a molding material over the insulating material, the one of the plurality of integrated circuit dies, and portions of the carrier; and 
 removing a top portion of the molding material and the insulating material to expose the plurality of connectors. 
 
     
     
       9. The method according to  claim 8 , wherein removing the insulating material from the corner regions of the plurality of integrated circuit dies comprises exposing a corner stress relief (CSR) pattern, a seal ring, or an alignment mark of the plurality of integrated circuit dies. 
     
     
       10. The method according to  claim 8 , wherein the one of the plurality of integrated circuit dies comprises a first integrated circuit die, and wherein the method further comprises coupling a second integrated circuit die to the carrier, before disposing the molding material. 
     
     
       11. The method according to  claim 8 , wherein the method comprises coupling a plurality of the integrated circuit dies to the carrier, before disposing the molding material. 
     
     
       12. The method according to  claim 8 , wherein the plurality of connectors comprises a plurality of first connectors disposed on a first side of the plurality of integrated circuit dies, and wherein the method further comprises removing the carrier, and coupling a plurality of second connectors to a second side of the one of the plurality of integrated circuit dies, the second side being opposite the first side. 
     
     
       13. A packaged semiconductor device, comprising:
 an integrated circuit die including a plurality of connectors disposed thereon; 
 an insulating material disposed between the plurality of connectors over the integrated circuit die, wherein the insulating material is not disposed in corner regions of the integrated circuit die; 
 a molding material disposed around the integrated circuit die and over the corner regions of the integrated circuit die, the insulating material interposed between the molding material and the integrated circuit die; and 
 an interconnect structure disposed over the plurality of connectors, the insulating material, and the molding material. 
 
     
     
       14. The packaged semiconductor device according to  claim 13 , wherein the insulating material comprises polybenzoxazole (PBO), polybenzobisoxazole, or polymide. 
     
     
       15. The packaged semiconductor device according to  claim 13 , wherein the plurality of connectors comprises a plurality of pillars. 
     
     
       16. The packaged semiconductor device according to  claim 15 , wherein the plurality of pillars comprises copper or a copper alloy. 
     
     
       17. The packaged semiconductor device according to  claim 13 , wherein the corner regions substantially comprise a shape selected from the group consisting essentially of a triangle, a square, a rectangle, a triangle with a curved side, and combinations thereof. 
     
     
       18. The packaged semiconductor device according to  claim 17 , wherein the corner regions comprise a shape of a triangle, and wherein the triangle comprises an isosceles right triangle. 
     
     
       19. The packaged semiconductor device according to  claim 13 , wherein the integrated circuit die comprises a plurality of contact pads disposed thereon, and wherein each of the plurality of connectors is coupled to one of the plurality of contact pads. 
     
     
       20. The packaged semiconductor device according to  claim 13 , wherein the plurality of connectors comprises a plurality of first connectors, wherein the packaged semiconductor device comprises a first packaged semiconductor device, and wherein the first packaged semiconductor device is coupled to a second packaged semiconductor device by a plurality of second connectors.