SiC single crystal and method for producing same

Abstract

A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution.

What is claimed is: 
     
       1. A method for producing a SiC single crystal wherein a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient in which temperature falls from an interior toward a surface, to grow the SiC single crystal, the method comprising:
 using, as the Si—C solution, a solution containing Si, Cr and Al, wherein an Al content is 3 at % or greater based on a total of Si, Cr and Al; and 
 making a temperature gradient y (° C./cm) in a surface region of the Si—C solution satisfy the following formula (1):
     y≧ 0.15789 x+ 21.52632  (1)
 
 
 
       wherein x represents the Al content (at %) of the Si—C solution. 
     
     
       2. The method for producing a SiC single crystal according to  claim 1 , comprising limiting the temperature gradient in the surface region of the Si—C solution to a range of 28 to 55° C./cm with the Al content in a range of 3 to 41 (at %) in the Si—C solution.