US9722099B2ActiveUtilityA1
Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Mar 14, 2013Filed: Jul 24, 2013Granted: Aug 1, 2017
Est. expiryMar 14, 2033(~6.6 yrs left)· nominal 20-yr term from priority
H01L 27/14685H01L 31/02161H01L 31/02164H01L 27/1462H01L 27/14623H01L 27/1464H10F 77/306H10F 39/8057H10F 39/805H10F 39/199H10F 39/024H10F 77/334
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References
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Claims
Abstract
A light sensing device includes a substrate, a light sensing area on the substrate, and a light shielding layer over the substrate. The light shielding layer does not cover the light sensing area. At least one outgassing hole is formed through the light shielding layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A light sensing device, comprising:
a substrate;
a light sensing area on the substrate;
an anti-reflective coating film over the substrate;
a light shielding layer over the anti-reflective coating film, the light shielding layer not covering the light sensing area, the light shielding layer comprising a conductive material; and
at least one outgassing hole formed through the light shielding layer, the at least one outgassing hole completely extending through the light shielding layer, the at least one outgassing hole at least partially extending through the anti-reflective coating film, portions of the conductive material exposed by all sidewalls of the at least one outgassing hole forming a single continuous region of the conductive material, an entire area of the substrate enclosed by a perimeter of the least one outgassing hole being free from the conductive material, the at least one outgassing hole being configured to release gasses and moisture absorbed in the anti-reflective coating film.
2. The light sensing device of claim 1 , wherein the anti-reflective coating film comprises high-k dielectric material.
3. The light sensing device of claim 1 , wherein the anti-reflective coating film comprises multiple layers.
4. The light sensing device of claim 1 , wherein the light shielding layer comprises copper, aluminum, or tungsten.
5. The light sensing device of claim 1 , wherein the at least one outgassing hole has a width or a diameter of at least 1 μm.
6. The light sensing device of claim 1 , wherein the at least one outgassing hole is at least 1 μm away from an edge of the light shielding layer.
7. The light sensing device of claim 1 , wherein the light shielding layer has a width of at least 10 μm.
8. The light sensing device of claim 1 , wherein the at least one outgassing hole has a linear, rectangular, square, circle, or oval shape.
9. The light sensing device of claim 1 , wherein four outgassing holes having a linear shape surrounding on four sides the light sensing area that has a rectangular shape.
10. The light sensing device of claim 1 , wherein multiple circular outgassing holes are distributed in a linear pattern along the light shielding layer with uniform spacing in between.
11. A method of fabricating a light sensing device:
forming an anti-reflective coating film over a substrate having a light sensing area;
forming a light shielding layer over the anti-reflective coating film, wherein the light shielding layer does not cover the light sensing area, the light shielding layer comprising a conductive material; and
patterning the light shielding layer to form at least one outgassing hole through the light shielding layer and at least partially through the anti-reflective coating film, a single continuous portion of the conductive material extending along all sidewalls of the at least one outgassing hole, an entire area of the substrate enclosed by a perimeter of the least one outgassing hole being free from the conductive material, the at least one outgassing hole being configured to release gasses and moisture absorbed in the anti-reflective coating film.
12. The method of claim 11 , wherein the at least one outgassing hole is formed at least partially through the anti-reflective coating film.
13. The method of claim 11 , wherein the anti-reflective coating film comprises high-k dielectric material.
14. The method of claim 11 , wherein the anti-reflective coating film comprises multiple layers.
15. The method of claim 11 , further comprising thinning the substrate.
16. The method of claim 11 , wherein the light shielding layer comprises copper, aluminum, or tungsten.
17. The method of claim 11 , wherein the at least one outgassing hole is formed at least 1 μm away from an edge of the light shielding layer, the at least one outgassing hole has a width or a diameter of at least 1 μm, and the light shielding layer has a width that is at least 10 μm.
18. A light sensing device, comprising:
a substrate;
a light sensing area on the substrate;
an anti-reflective coating film over the substrate;
a light shielding layer over the anti-reflective coating film, the light shielding layer not covering the light sensing area; and
at least one outgassing hole formed through the light shielding layer, the at least one outgassing hole extending below a bottommost surface of the light shielding layer and at least partially extending through the anti-reflective coating film, the at least one outgassing hole being configured to release unwanted gasses and moisture absorbed in the anti-reflective coating film, wherein the at least one outgassing hole is at least 1 μm away from an edge of the light shielding layer.
19. The light sensing device of claim 18 , wherein the at least one outgassing hole comprises a plurality of outgassing holes, wherein the plurality of outgassing holes forms a perimeter around the light sensing area.
20. The light sensing device of claim 18 , wherein the anti-reflective coating film comprises multiple layers.Join the waitlist — get patent alerts
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