Wafers, panels, semiconductor devices, and glass treatment methods

Abstract

Glass treatment methods, wafer, panels, and semiconductor devices are disclosed. In some embodiments, a method of forming a wafer or panel includes forming an opening through a glass substrate, forming a composite film on the glass substrate and on sidewalls of the opening, and filling the opening.

What is claimed is: 
     
       1. A method of forming a wafer or panel, the method comprising:
 forming an opening through a glass substrate; 
 forming a composite film on the glass substrate and on sidewalls of the opening, wherein the forming the composite film comprises:
 forming a first film on the glass substrate and along the sidewalls of the opening; and 
 forming a second film on the first film, wherein the first film has a first porosity that is lower than a second porosity of the second film; 
 
 after forming the composite film, performing an annealing process; and 
 filling the opening. 
 
     
     
       2. The method of  claim 1 , wherein the composite film comprises a material that reduces out-diffusion of mobile ions from the glass substrate. 
     
     
       3. The method of  claim 1 , wherein the first film and the second film are formed using a similar deposition method and at a similar temperature. 
     
     
       4. The method of  claim 1 , wherein the composite film reduces warpage of the glass substrate. 
     
     
       5. The method of  claim 1 , wherein the annealing process is performed at a temperature of about 400 C.° for about 90 minutes in an ambient N 2  flow. 
     
     
       6. The method of  claim 1 , wherein the filling the opening uses a semiconductive filling material. 
     
     
       7. The method of  claim 6 , further comprising:
 after the filling the opening, removing excess filling material using a lithography or a chemical-mechanical polishing process. 
 
     
     
       8. A method of forming a wafer or panel, the method comprising:
 forming a plurality of openings in a glass substrate; 
 forming a first film on the glass substrate and on sidewalls of the plurality of openings; 
 forming a second film on the first film, the second film comprising an electrically insulating material; and 
 filling the plurality of openings using a semiconductive material to form a plurality of vias extending through the glass substrate. 
 
     
     
       9. The method of  claim 8 , wherein the first film and second film form a composite film to reduce out-diffusion of mobile ions from the glass substrate. 
     
     
       10. The method of  claim 8 , wherein the first film has a first porosity that is lower than a second porosity of the second film. 
     
     
       11. The method of  claim 8 , wherein the first film comprises a semiconductive or conductive material. 
     
     
       12. The method of  claim 8 , wherein the first film contacts an exterior surface of the glass substrate and extends away from the glass substrate, wherein two end surfaces of each of the plurality of vias raise above or recess below a respective nearest surface of the second film. 
     
     
       13. A method comprising:
 providing a glass substrate having a first side and a second side; 
 forming a plurality of vias extending from the first side to the second side; and 
 depositing a composite film on sidewalls of the plurality of vias, comprising:
 depositing a first film; and 
 depositing a second film on the first film, wherein a first porosity of the first film is lower than a second porosity of the second film. 
 
 
     
     
       14. The method of  claim 13 , wherein the composite film is further deposited on at least one of the first side and the second side. 
     
     
       15. The method of  claim 13 , wherein the depositing the first film comprises depositing a semiconductive or conductive material. 
     
     
       16. The method of  claim 13 , wherein the depositing the second film comprises depositing an electrically insulating material. 
     
     
       17. The method of  claim 1 , wherein the first film has a porosity of less than about 5%. 
     
     
       18. The method of  claim 8 , further comprising annealing the first film and the second film after the forming the second film on the first film. 
     
     
       19. The method of  claim 8 , further comprising forming a redistribution layer on the second film. 
     
     
       20. The method of  claim 19 , further comprising attaching a semiconductor die to the redistribution layer.