Method of manufacturing a thin film having a high tolerance to etching and non-transitory computer-readable recording medium

Abstract

A thin film containing boron and a borazine ring structure is formed on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound. The cycle includes: supplying a source gas containing boron and a halogen element to the substrate; and supplying a reactive gas including a borazine compound to the substrate.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising forming a thin film containing boron and a borazine ring structure on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound, the cycle comprising:
 (a) supplying a source gas containing boron and a halogen element to the substrate; and 
 (b) supplying a reactive gas including the borazine compound to the substrate, 
 wherein a first layer containing boron and the halogen element is formed in the step (a), and a second layer containing boron and the borazine ring structure is formed by reacting the first layer with the borazine compound to modify the first layer in the step (b), and 
 wherein the step (b) comprises:
 (b-1) reacting the halogen element included in the first layer with a ligand included in the borazine compound; 
 (b-2) separating the halogen element from the first layer and separating the ligand from the borazine compound after performing the step (b-1); and 
 (b-3) binding nitrogen included in a borazine ring of the borazine compound with the boron included in the first layer after performing the step (b-2). 
 
 
     
     
       2. The method of  claim 1 , wherein the step (b) is performed under a condition where the halogen element included in the first layer reacts with a ligand included in the borazine compound; the halogen element is separated from the first layer after reacting with the ligand; the ligand is separated from the borazine compound after reacting with the halogen element; and nitrogen included in a borazine ring of the borazine compound binds with the boron included in the first layer after the ligand is separated from the borazine compound. 
     
     
       3. The method of  claim 1 , wherein a temperature of the substrate in the step (b) is a temperature whereat the halogen element included in the first layer reacts with a ligand included in the borazine compound; the halogen element is separated from the first layer after reacting with the ligand; the ligand is separated from the borazine compound after reacting with the halogen element; and nitrogen included in a borazine ring of the borazine compound binds with the boron included in the first layer after the ligand is separated from the borazine compound. 
     
     
       4. The method of  claim 1 , wherein the steps (a) and (b) are alternately performed a predetermined number of times. 
     
     
       5. The method of  claim 1 , wherein the cycle further comprises (c) supplying a gas containing at least one selected from the group consisting of nitrogen and carbon to the substrate. 
     
     
       6. The method of  claim 1 , wherein the cycle further comprises (d) supplying a nitriding gas to the substrate. 
     
     
       7. The method of  claim 6 , wherein the cycle comprising the steps (a), (b) and (d) are performed a predetermined number of times in a manner that the step (d) is performed after alternately performing the steps (a) and (b) a predetermined number of times in each cycle. 
     
     
       8. The method of  claim 6 , wherein the nitriding gas is thermally activated in the step (d). 
     
     
       9. The method of  claim 6 , wherein the nitriding gas is plasma-activated in the step (d). 
     
     
       10. The method of  claim 1 , wherein the cycle further comprises (e) supplying a carbon-containing gas to the substrate. 
     
     
       11. The method of  claim 1 , wherein the cycle further comprises (f) supplying a gas containing nitrogen and carbon to the substrate. 
     
     
       12. The method of  claim 11 , wherein the cycle comprises the steps (a), (b) and (f) are performed a predetermined number of times in a manner that the step (f) is performed after alternately performing the steps (a) and (b) a predetermined number of times in each cycle. 
     
     
       13. The method of  claim 1 , wherein the cycle is performed a predetermined number of times under a non-plasma condition. 
     
     
       14. The method of  claim 1 , wherein the thin film contains the borazine ring structure, boron, carbon and nitrogen or contains the borazine ring structure, boron and nitrogen. 
     
     
       15. A method of manufacturing a semiconductor device, comprising forming a thin film containing boron and a borazine ring structure on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound, the cycle comprising:
 (a) supplying a source gas containing boron and a halogen element to the substrate; and 
 (b) supplying a reactive gas including the borazine compound to the substrate, 
 wherein the steps (a) and (b) are performed simultaneously. 
 
     
     
       16. A non-transitory computer-readable recording medium storing a program for causing a computer to perform forming a thin film containing boron and a borazine ring structure on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound, the cycle comprising:
 (a) supplying a source gas containing boron and a halogen element to the substrate in a process chamber; and 
 (b) supplying a reactive gas including the borazine compound to the substrate in the process chamber, 
 wherein a first layer containing boron and the halogen element is formed in the step (a), and a second layer containing boron and the borazine ring structure is formed by reacting the first layer with the borazine compound to modify the first layer in the step (b), and 
 wherein the step (b) comprises:
 (b-1) reacting the halogen element included in the first layer with a ligand included in the borazine compound; 
 (b-2) separating the halogen element from the first layer and separating the ligand from the borazine compound after performing the step (b-1); and 
 (b-3) binding nitrogen included in a borazine ring of the borazine compound with the boron included in the first layer after performing the step (b-2).