Semiconductor device having groove-shaped via-hole

Abstract

The semiconductor device has insulating films 40, 42 formed over a substrate 10 ; an interconnection 58 buried in at least a surface side of the insulating films 40, 42 ; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66 a having a pattern bent at a right angle; and buried conductors 70, 72 a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66 a . A groove-shaped via-hole 66 a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66 . Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a substrate that includes four corners; 
 a first conductive layer formed above the substrate; 
 a first guard ring, that includes a first conductor, formed above the substrate; and 
 a second guard ring, that includes a second conductor, formed above the substrate, 
 wherein: 
 the first conductor is connected to the first conductive layer; 
 the second conductor is connected to the first conductive layer; 
 the second guard ring is surrounded by the first guard ring; 
 the first guard ring includes a first part, a second part, a third part, a fourth part,fifth part, a sixth part, a seventh part and an eighth part; 
 the first part extends in a first direction; 
 the second part extends in a second direction; 
 the third part extends in a third direction; 
 the fourth part extends in a fourth direction; 
 the fifth part extends in a fifth direction; 
 the sixth part extends in a sixth direction; 
 the seventh part extends in a seventh direction; 
 the eighth part extends in an eighth direction; 
 the second direction is different from the first direction and the third direction in a plan view; 
 the fourth direction is different from the third direction and the fifth direction in a plan view; 
 the sixth direction is different from the fifth direction and the seventh direction in a plan view; 
 the eighth direction is different from the seventh direction and the first direction in a plan view; 
 the second part, the fourth part, the sixth part and the eighth part are located at each of the four corners respectively; 
 the second part is connected to the first part and the third part; 
 the fourth part is connected to the third part and the fifth part; 
 the sixth part is connected to the fifth part and the seventh part; 
 the eighth part is connected to the first part and the seventh part; 
 the second guard ring includes a ninth part, a tenth part, an eleventh part, a twelfth part, a thirteenth part, a fourteenth part, a fifteenth part and an sixteenth part; 
 the ninth part extends in a ninth direction; 
 the tenth part extends in a tenth direction; 
 the eleventh part extends in an eleventh direction; 
 the twelfth part extends in a twelfth direction; 
 the thirteenth part extends in a thirteenth direction; 
 the fourteenth part extends in a fourteenth direction; 
 the fifteenth part extends in a fifteenth direction; 
 the sixteenth part extends in an sixteenth direction; 
 the tenth direction is different from the ninth direction and the eleventh direction in a plan view; 
 the twelfth direction is different from the eleventh direction and the thirteenth direction in a plan view; 
 the fourteenth direction is different from the thirteenth direction and the fifteenth direction in a plan view; 
 the sixteenth direction is different from the fifteenth direction and the ninth direction in a plan view; 
 the tenth part, the twelfth part, the fourteenth part and the sixteenth part are located at each of the four corners respectively; 
 the tenth part is connected to the ninth part and the eleventh part; 
 the twelfth part is connected to the eleventh part and the thirteenth part; 
 the fourteenth part is connected to the thirteenth part and the fifteenth part; and 
 the sixteenth part is connected to the ninth part and the fifteenth part. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein:
 the first direction is perpendicular to the third direction in a plan view; 
 the third direction is perpendicular to the fifth direction in a plan view; 
 the fifth direction is perpendicular to the seventh direction in a plan view; and 
 the seventh direction is perpendicular to the first direction in a plan view. 
 
     
     
       3. The semiconductor device according to  claim 1 , wherein:
 an angle of the first direction from the second direction is larger than 90 degrees in a plan view; 
 an angle of the second direction from the third direction is larger than 90 degrees in a plan view; an angle of the third direction from the fourth direction is larger than 90 degrees in a plan view; 
 an angle of the fourth direction from the fifth direction is larger than 90 degrees in a plan view; 
 an angle of the fifth direction from the sixth direction is larger than 90 degrees in a plan view; 
 an angle of the sixth direction from the seventh direction is larger than 90 degrees in a plan view; 
 an angle of the seventh direction from the eighth direction is larger than 90 degrees in a plan view; 
 an angle of the eighth direction from the first direction is larger than 90 degrees in a plan view. 
 
     
     
       4. The semiconductor device according to  claim 1 , wherein:
 the first part extends straight in the first direction; 
 the third part extends straight in the third direction; 
 the fifth part extend straight in the fifth direction; and 
 the seventh part extends straight in the seventh direction. 
 
     
     
       5. The semiconductor device according to  claim 1 ,
 further comprising a first insulating film formed above the substrate, 
 wherein: 
 the first guard ring includes a first groove-shaped via-hole in the first insulating film; 
 the second guard ring includes a second groove-shaped via-hole in the first insulating film; 
 the first conductor is formed in the first groove-shaped via-hole; and 
 the second conductor is formed in the second groove-shaped via-hole. 
 
     
     
       6. The semiconductor device according to  claim 5 , wherein the first insulating film includes silicon, carbon and oxygen. 
     
     
       7. The semiconductor layer according to  claim 1 , wherein the first conductor includes a first tantalum based film and a first copper film; and
 the second conductor includes a second tantalum based film and a second copper film. 
 
     
     
       8. The semiconductor device according to  claim 1 , further comprising:
 a first aluminum pattern formed above the first guard ring and electrically connected to the first guard ring. 
 
     
     
       9. The semiconductor device according to  claim 1 , further comprising:
 a first aluminum pattern formed above the first guard ring and connected to the first guard ring by a contact plug. 
 
     
     
       10. A semiconductor device comprising:
 a substrate that includes four corners; 
 a first conductive layer formed above the substrate; 
 a first guard ring, that includes a first conductor, formed above the substrate; and 
 a second guard ring, that includes a second conductor, formed above the substrate, 
 wherein: 
 the first conductor is connected to the substrate; 
 the second conductor is connected to the substrate; 
 the first conductor is connected to the first conductive layer; 
 the second conductor is connected to the first conductive layer; 
 the second guard ring is surrounded by the first guard ring; 
 the first guard ring includes a first part, a second part, a third part, a fourth part, a fifth part, a sixth part, a seventh part and an eighth part; 
 the first part extends in a first direction; 
 the second part extends in a second direction; 
 the third part extends in a third direction; 
 the fourth part extends in a fourth direction; 
 the fifth part extends in a fifth direction; 
 the sixth part extends in a sixth direction; 
 the seventh part extends in a seventh direction; 
 the eighth part extends in an eighth direction; 
 the second direction is different from the first direction and the third direction in a plan view; 
 the fourth direction is different from the third direction and the fifth direction in a plan view; 
 the sixth direction is different from the fifth direction and the seventh direction in a plan view; 
 the eighth direction is different from the seventh direction and the first direction in a plan view; 
 the second part, the fourth part, the sixth part and the eighth part are located at each of the four corners respectively; 
 the second part is connected to the first part and the third part; 
 the fourth part is connected to the third part and the fifth part; 
 the sixth part is connected to the fifth part and the seventh part; 
 the eighth part is connected to the first part and the seventh part; 
 the second guard ring includes a ninth part, a tenth part, an eleventh part, a twelfth part, a thirteenth part, a fourteenth part, a fifteenth part and an sixteenth part; 
 the ninth part extends in a ninth direction; 
 the tenth part extends in a tenth direction; 
 the eleventh part extends in an eleventh direction; 
 the twelfth part extends in a twelfth direction; 
 the thirteenth part extends in a thirteenth direction; 
 the fourteenth part extends in a fourteenth direction; 
 the fifteenth part extends in a fifteenth direction; 
 the sixteenth part extends in an sixteenth direction; 
 the tenth direction is different from the ninth direction and the eleventh direction in a plan view; 
 the twelfth direction is different from the eleventh direction and the thirteenth direction in a plan view; 
 the fourteenth direction is different from the thirteenth direction and the fifteenth direction in a plan view; 
 the sixteenth direction is different from the fifteenth direction and the ninth direction in a plan view; 
 the tenth part, the twelfth part, the fourteenth part and the sixteenth part are located at each of the four corners respectively; 
 the tenth part is connected to the ninth part and the eleventh part; 
 the twelfth part is connected to the eleventh part and the thirteenth part; 
 the fourteenth part is connected to the thirteenth part and the fifteenth part; and 
 the sixteenth part is connected to the ninth part and the fifteenth part. 
 
     
     
       11. The semiconductor device according to  claim 10 , wherein:
 the first direction is perpendicular to the third direction in a plan view; 
 the third direction is perpendicular to the fifth direction in a plan view; 
 the fifth direction is perpendicular to the seventh direction in a plan view; and 
 the seventh direction is perpendicular to the first direction in a plan view. 
 
     
     
       12. The semiconductor device according to  claim 10 , wherein:
 an angle of the first direction from the second direction is larger than 90 degrees in a plan view; 
 an angle of the second direction from the third direction is larger than 90 degrees in a plan view; 
 an angle of the third direction from the fourth direction is larger than 90degrees in a plan view; 
 an angle of the fourth direction from the fifth direction is larger than 90 degrees in a plan view; 
 an angle of the fifth direction from the sixth direction is larger than 90 degrees in a plan view; 
 an angle of the sixth direction from the seventh direction is larger than 90 degrees in a plan view; 
 an angle of the seventh direction from the eighth direction is larger than 90 degrees in a plan view; 
 an angle of the eighth direction from the first direction is larger than 90 degrees in a plan view. 
 
     
     
       13. The semiconductor device according to  claim 10 , wherein:
 the first part extends straight in the first direction; 
 the third part extends straight in the third direction; 
 the fifth part extends straight in the fifth direction; and 
 the seventh part extends straight in the seventh direction. 
 
     
     
       14. The semiconductor device according to  claim 10 , further comprising a first insulating film formed above the substrate,
 wherein: 
 the first guard ring includes a first groove-shaped via-hole; 
 the second guard ring includes a second groove-shaped via-hole; 
 the first conductor is formed in the first groove-shaped via-hole; and 
 the second conductor is formed in the second groove-shaped via-hole. 
 
     
     
       15. The semiconductor device according to  claim 14 , wherein the first insulating film includes silicon and oxygen. 
     
     
       16. The semiconductor layer according to  claim 10 , wherein
 the first conductor includes a first tungsten film and a first titanium nitride film; and 
 the second conductor includes a second tungsten film and a second titanium nitride film. 
 
     
     
       17. The semiconductor device according to  claim 10 , further comprising:
 a first aluminum pattern formed above the first guard ring and electrically connected to the first guard ring. 
 
     
     
       18. The semiconductor device according to  claim 10 , further comprising:
 a first aluminum pattern formed above the first guard ring and connected to the first guard ring by a contact plug. 
 
     
     
       19. The semiconductor device according to  claim 1 , further comprising
 a third guard ring, that includes a third conductor, formed above the substrate, and 
 a fourth guard ring, that includes a fourth conductor, formed above the substrate, 
 wherein 
 the third conductor is connected to the first conductive layer; 
 the fourth conductor is connected to the first conductive layer; 
 the third guard ring includes a seventeenth part, an eighteenth part, a nineteenth part, a twentieth part, a twenty first part, a twenty second part, a twenty third part and a twenty fourth part; 
 the seventeenth part extends in a seventeenth direction; 
 the eighteenth part extends in an eighteenth direction; 
 the nineteenth part extends in a nineteenth direction; 
 the twentieth part extends in a twentieth direction; 
 the twenty first part extends in a twenty first direction; 
 the twenty second part extends in a twenty second direction; 
 the twenty third part extends in a twenty third direction; 
 the twenty fourth part extends in a twenty fourth direction; 
 the eighteenth direction is different from the seventeenth direction and the nineteenth direction in a plan view; 
 the twentieth direction is different from the nineteenth direction and the twenty first direction in a plan view; 
 the twenty second direction is different from the twenty first direction and the twenty third direction in a plan view; 
 the twenty fourth direction is different from the twenty third direction and the seventeenth direction in a plan view; 
 the eighteenth part, the twentieth part, the twenty second part and the twenty fourth part are located at each of the four corners respectively; 
 the eighteenth part is connected to the seventeenth part and the nineteenth part; 
 the twentieth part is connected to the nineteenth part and the twenty first part; 
 the twenty second part is connected to the twenty first part and the twenty third part; and 
 the twenty fourth part is connected to the seventeenth part and the twenty third part. 
 
     
     
       20. The semiconductor device according to  claim 19 , further comprising
 a first aluminum pattern formed above the first guard ring, and 
 a second aluminum pattern formed above the third guard ring, 
 wherein 
 the first guard ring is electrically connected to the first aluminum pattern, and 
 the third guard ring is electrically connected to the second aluminum pattern. 
 
     
     
       21. The semiconductor device according to  claim 10 , further comprising
 a third guard ring, that includes a third conductor, formed above the substrate, and 
 a fourth guard ring, that includes a fourth conductor, formed above the substrate, 
 wherein 
 the third conductor is connected to the first conductive layer; 
 the fourth conductor is connected to the first conductive layer; 
 the third guard ring includes a seventeenth part, an eighteenth part, a nineteenth part, a twentieth part, a twenty first part, a twenty second part, a twenty third part and a twenty fourth part; 
 the seventeenth part extends in a seventeenth direction; 
 the eighteenth part extends in an eighteenth direction; 
 the nineteenth part extends in a nineteenth direction; 
 the twentieth part extends in a twentieth direction; 
 the twenty first part extends in a twenty first direction; 
 the twenty second part extends in a twenty second direction; 
 the twenty third part extends in a twenty third direction; 
 the twenty fourth part extends in a twenty fourth direction; 
 the eighteenth direction is different from the seventeenth direction and the nineteenth direction in a plan view; 
 the twentieth direction is different from the nineteenth direction and the twenty first direction in a plan view; 
 the twenty second direction is different from the twenty first direction and the twenty third direction in a plan view; 
 the twenty fourth direction is different from the twenty third direction and the seventeenth direction in a plan view; 
 the eighteenth part, the twentieth part, the twenty second part and the twenty fourth part are located at each of the four corners respectively; 
 the eighteenth part is connected to the seventeenth part and the nineteenth part; 
 the twentieth part is connected to the nineteenth part and the twenty first part; 
 the twenty second part is connected to the twenty first part and the twenty third part; and 
 the twenty fourth part is connected to the seventeenth part and the twenty third part. 
 
     
     
       22. The semiconductor device according to  claim 21 , further comprising
 a first aluminum pattern formed above the first guard ring, and 
 a second aluminum pattern formed above the third guard ring, 
 wherein 
 the first guard ring is electrically connected to the first aluminum pattern, and 
 the third guard ring is electrically connected to the second aluminum pattern.