Organic light emitting display device and method for manufacturing the same

Abstract

Disclosed are an organic light emitting display device and a manufacturing method. The organic light emitting display device includes: a data line arranged in a first direction on a substrate; a gate line arranged in a second direction on the substrate; a thin film transistor arranged at a crossing of the gate line and the data line; a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region; a low reflection layer arranged opposite the white pixel region; and a light shield layer arranged opposite to the thin film transistor.

What is claimed is: 
     
       1. An organic light emitting display device comprising:
 a data line arranged in a first direction on a substrate; 
 a gate line arranged in a second direction on the substrate; 
 a thin film transistor arranged at an intersection of the gate line and the data line; 
 a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region; 
 a low reflection layer being arranged in the white pixel region; and 
 a light shield layer arranged opposite the thin film transistor and contacting the substrate. 
 
     
     
       2. The organic light emitting display device of  claim 1 , wherein the low reflection layer is arranged on and physically contacting the pixel electrode. 
     
     
       3. The organic light emitting display device of  claim 1 , wherein the low reflection layer is made of a same material as the light shield layer. 
     
     
       4. The organic light emitting display device of  claim 1 , wherein the light shield layer comprises a four-layer film comprising:
 a first metal layer; 
 a first oxide layer or a first nitride layer; 
 a second metal layer; and 
 a second oxide layer or a second nitride layer. 
 
     
     
       5. The organic light emitting display device of  claim 1 , wherein the source electrode, the drain electrode, or the gate constituting the thin film transistor comprises a tri-layer film comprising:
 a first oxide layer or a first nitride layer; 
 a first metal layer; and 
 a second oxide layer or a second nitride layer. 
 
     
     
       6. The organic light emitting display device of  claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
 a first oxide layer or a first nitride layer; 
 a first metal layer; and 
 a second oxide layer or a second nitride layer. 
 
     
     
       7. The organic light emitting display device of  claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
 a first oxide layer or a fist nitride layer; 
 a first metal layer; and 
 a semiconductor layer made of the same material as an active layer of the thin film transistor. 
 
     
     
       8. The organic light emitting display device of  claim 1 , wherein the low reflection layer is disposed between the substrate and a buffer layer. 
     
     
       9. The organic light emitting display device of  claim 1 , wherein the light shield layer is disposed between the substrate and a buffer layer.