Semiconductor memory device

Abstract

According to one embodiment, a semiconductor memory device includes a memory cell transistor and a word line connected to the memory cell transistor. A threshold voltage of the memory cell transistor is shifted to a negative voltage side by applying an erase pulse to the memory cell transistor. When the erase pulse is applied, if the threshold voltage of the memory cell transistor is higher than or equal to a first voltage, a second voltage is applied to the word line. If the threshold voltage of the memory cell transistor is lower than the first voltage and higher than or equal to a third voltage which is lower than the first voltage, a fourth voltage which is higher than the second voltage is applied to the word line.

What is claimed is: 
     
       1. A semiconductor memory device comprising:
 a memory cell transistor; and 
 a word line coupled to the memory cell transistor, 
 wherein a threshold voltage of the memory cell transistor is shifted to a negative voltage side by applying an erase pulse to the memory cell transistor, 
 when the erase pulse is applied, if the threshold voltage of the memory cell transistor is higher than or equal to a first voltage, a second voltage is applied to the word line, and 
 if the threshold voltage of the memory cell transistor is lower than the first voltage and higher than or equal to a third voltage which is lower than the first voltage, a fourth voltage which is higher than the second voltage is applied to the word line. 
 
     
     
       2. The device according to  claim 1 , wherein the erase pulse is stepped up, and
 the erase pulse has a step-up width that is larger than a potential difference between the second voltage and the fourth voltage. 
 
     
     
       3. The device according to  claim 1 , wherein the second voltage and the fourth voltage are lower than a voltage of the erase pulse, and
 a potential difference between the voltage of the erase pulse and the second voltage is larger than a potential difference between the voltage of the erase pulse and the fourth voltage. 
 
     
     
       4. The device according to  claim 1 , wherein an amount of shift of the threshold voltage of the memory cell transistor by applying the erase pulse is smaller when the fourth voltage is applied to the word line than when the second voltage is applied to the word line. 
     
     
       5. The device according to  claim 1 , wherein the erase pulse is applied to a hack gate of the memory cell transistor. 
     
     
       6. The device according to  claim 1 , wherein a first erase verify and a second erase verify are performed after the erase pulse is applied,
 a fifth voltage is applied to the word line when the first erase verify is performed, 
 a sixth voltage which is lower than the fifth voltage is applied to the word line when the second erase verify is performed, 
 the second voltage is applied to the word line when the first erase verify is failed, and 
 the fourth voltage is applied to the word line when the first erase verify is passed and the second erase verify is failed. 
 
     
     
       7. The device according to  claim 6 , wherein the first voltage is equal to the fifth voltage, and
 the third voltage is equal to the sixth voltage. 
 
     
     
       8. The device according to  claim 6 , wherein it is determined that the first erase verify is failed when the threshold voltage of the memory cell transistor is higher than or equal to the first voltage, and
 it is determined that the second erase verify is failed when the threshold voltage of the memory cell transistor is higher than or equal to the third voltage. 
 
     
     
       9. The device according to  claim 6 , further comprising a sense amplifier coupled to the memory cell transistor via a bit line,
 wherein the sense amplifier includes a first interconnect for sensing a current flowing in the bit line, and 
 in the determination of one of the first erase verify and the second erase verify, it is determined that the one of the first erase verify and the second erase verify is failed when a voltage of the first interconnect is higher than or equal to a seventh voltage, and it is determined that the one of the first erase verify and the second erase verify is passed when the voltage of the first interconnect is lower than the seventh voltage. 
 
     
     
       10. The device according to  claim 6 , further comprising a determination circuit which outputs a first signal based upon results of the first erase verify and the second erase verify,
 wherein the determination circuit outputs a first logic level when the first erase verify is failed and outputs a second logic level when the first erase verify is passed and the second erase verify is failed. 
 
     
     
       11. The device according to  claim 1 , further comprising a sense amplifier coupled to the memory cell transistor via a bit line,
 wherein the first erase verify and the second erase verify are performed after the erase pulse is applied, 
 the first erase verify is determined when a sense time in the sense amplifier is a first period, 
 the second erase verify is determined when the sense time in the sense amplifier is a second period which is longer than the first period, 
 the second voltage is applied to the word line when the erase pulse is applied if the first erase verify and the second erase verify are failed; and 
 the fourth voltage is applied to the word line when the erase pulse is applied if the first erase verify is failed and the second erase verify is passed. 
 
     
     
       12. The device according to  claim 11 , wherein it is determined that the first erase verify is failed when the threshold voltage of the memory cell, transistor is higher than or equal to the third voltage, and
 it is determined that the second erase verify is failed when the threshold voltage of the memory cell transistor is higher than equal to the first voltage. 
 
     
     
       13. The device according to  claim 11 , wherein the sense amplifier includes a first interconnect for sensing a current flowing in the bit line, and
 in the determination of one of the first erase verify and the second erase verify, it is determined that the one of the first erase verify and the second erase verify is failed when a voltage of the first interconnect is higher than or equal to a fifth voltage and it is determined that the one of the first erase verify and the second erase verify is passed when the voltage of the first interconnect is lower than the fifth voltage. 
 
     
     
       14. The device according to  claim 1 , wherein the fourth voltage applied to the word line is stepped up in accordance with the number of applications of the erase pulse if the erase pulse is applied a plurality of times while the threshold voltage of the memory cell transistor is lower than the first voltage and higher than or equal to the third voltage which is lower than the first voltage.