Magnetic multilayer structure

Abstract

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

What is claimed is: 
     
       1. A method for fabricating an integrated laminated magnetic device, comprising:
 providing a substrate; 
 forming a multilayer stack structure on the substrate, the multilayer stack structure including alternating magnetic layers and diode structures formed on the substrate; 
 wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure; 
 wherein the multilayer stack structure comprises a first magnetic layer disposed on the substrate, the diode structure disposed directly on top of the first magnetic layer, a second magnetic layer disposed directly on top of the diode structure, another diode structure disposed directly on top of the second magnetic layer, another first magnetic layer disposed directly on top of the another diode structure. 
 
     
     
       2. The method of  claim 1 , wherein the multilayer stack structure comprises repeated sandwiches of two of the magnetic layers having the diode structure interposed in between. 
     
     
       3. The method of  claim 1 , further comprising providing a planar multi-turn coil structure such that the multilayer stack structure surrounds a portion of the planar multi-turn coil structure. 
     
     
       4. The method of  claim 1 , wherein the magnetic layers are disposed to form the multilayer stack structure by electroplating. 
     
     
       5. The method of  claim 1 , wherein the diode structures are disposed to form the multilayer stack structure by electroplating. 
     
     
       6. The method of  claim 1 , wherein the diode structures are forwarded bias in a same direction in the multilayer stack structure;
 wherein the same direction is a forward bias direction. 
 
     
     
       7. The method of  claim 6 , wherein an electrical eddy current in the multilayer stack structure is inhibited from flowing in a reverse bias direction between the each magnetic layer and the another magnetic layer. 
     
     
       8. The method of  claim 6 , wherein the diode structures in the multilayer stack structure each comprise a p-type material having positive charge carriers and an n-type material having negative charge carriers.