Semiconductor device having aluminum-containing layer between two curved substrates

Abstract

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first substrate with curvature; 
 an adhesive over the first substrate; 
 an oxide layer over the adhesive; 
 a layer comprising wiring lines and pixel electrodes over the oxide layer; 
 a second substrate with curvature over the layer; and 
 a film including aluminum between the adhesive and the oxide layer. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the film including the aluminum is an aluminum nitride film or an aluminum nitride oxide film. 
     
     
       3. The semiconductor device according to  claim 1 , wherein each of the first substrate and the second substrate has an elasticity. 
     
     
       4. The semiconductor device according to  claim 1 , wherein a curvature radius of each of the first substrate and the second substrate is 50 cm to 200 cm. 
     
     
       5. The semiconductor device according to  claim 1 , wherein the semiconductor device is flexible. 
     
     
       6. The semiconductor device according to  claim 1 , wherein the layer further comprises a transistor. 
     
     
       7. The semiconductor device according to  claim 1 , wherein the layer further comprises a liquid crystal. 
     
     
       8. The semiconductor device according to  claim 1 , wherein the layer further comprises a light emitting material. 
     
     
       9. A semiconductor device comprising:
 a first substrate with curvature; 
 an adhesive over the first substrate; 
 an oxide layer over the adhesive; 
 a layer comprising wiring lines and pixel electrodes over the oxide layer; 
 a second substrate with curvature over the layer; and 
 a film having a thermal conductivity between the adhesive and the oxide layer, 
 wherein the film having the thermal conductivity includes aluminum. 
 
     
     
       10. The semiconductor device according to  claim 9 , wherein the film having the thermal conductivity is an aluminum nitride film or an aluminum nitride oxide film. 
     
     
       11. The semiconductor device according to  claim 9 , wherein each of the first substrate and the second substrate has an elasticity. 
     
     
       12. The semiconductor device according to  claim 9 , wherein a curvature radius of each of the first substrate and the second substrate is 50 cm to 200 cm. 
     
     
       13. The semiconductor device according to  claim 9 , wherein the semiconductor device is flexible. 
     
     
       14. The semiconductor device according to  claim 9 , wherein the layer further comprises a transistor. 
     
     
       15. The semiconductor device according to  claim 9 , wherein the layer further comprises a liquid crystal. 
     
     
       16. The semiconductor device according to  claim 9 , wherein the layer further comprises a light emitting material.