Radiation detector
Abstract
The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd 1-x Mg x Te in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd 1-x Mg x Te crystal in the composition range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te; (b) providing an electrical contact means for connecting the Cd 1-x Mg x Te crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A detection system for X-ray or gamma ray radiation comprising a solid solution Cd 1-x Mg x Te crystal in a composition range Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te, an amplification, measurement, identification or imaging means, and an electrical contact means for connecting the Cd 1-x Mg x Te crystal to the amplification, measurement, identification or imaging means.
2. The detection system of claim 1 wherein the crystal has been annealed.
3. The detection system of claim 1 further comprising an insulating layer between the electrical contact means and the crystal.
4. The detection system of claim 1 wherein the crystal is doped with a Group III element.
5. The detection system of claim 4 wherein the Group III element is Indium.
6. The detection system of claim 4 wherein the Group III element is present in an amount of 1×10 17 cm −3 to 3×10 17 cm −3 .
7. The detection system of claim 1 wherein the amplification, measurement, identification or imaging means is a spectrum.
8. A method for detecting X- or gamma ray radiation comprising
(a) providing a solid solution Cd 1-x Mg x Te crystal in the composition range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te;
(b) providing an electrical contact means for connecting the Cd 1-x Mg x Te crystal to an amplification, measurement, identification or imaging means; and
(c) detecting the presence of the X- or gamma ray radiation.
9. The method according to claim 8 further comprising providing a Group III element dopant to the crystal.
10. The method according to claim 9 wherein the dopant is Indium.
11. The method according to claim 9 wherein the dopant is present in an amount of 1×10 17 cm −3 to 3×10 17 cm −3 .
12. The method according to claim 8 wherein the amplification, measurement, identification or imaging means is a spectrum.
13. The method according to claim 8 performed at approximately room temperature.
14. The method according to claim 8 wherein the detecting is performed using a system comprising a bias voltage source to provide positive and negative voltage.
15. The method according to claim 8 wherein the detecting is performed using a system comprising one or more preamplifiers.
16. The method according to claim 8 wherein the detecting is performed using a system that is a coaxial, a cross-strip plate, a co-planar, a pixilated, or a pad configuration.Join the waitlist — get patent alerts
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