US9329282B2ActiveUtilityA1

Radiation detector

Assignee: HERPST ROBERT DPriority: Apr 6, 2011Filed: Apr 5, 2012Granted: May 3, 2016
Est. expiryApr 6, 2031(~4.7 yrs left)· nominal 20-yr term from priority
H10F 77/1237H10F 77/1233H10F 71/1253H10F 71/128H10F 30/301H10F 77/12G01T 1/24H01L 31/02966H01L 31/085
57
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Cited by
14
References
16
Claims

Abstract

The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd 1-x Mg x Te in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd 1-x Mg x Te crystal in the composition range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te; (b) providing an electrical contact means for connecting the Cd 1-x Mg x Te crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A detection system for X-ray or gamma ray radiation comprising a solid solution Cd 1-x Mg x Te crystal in a composition range Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te, an amplification, measurement, identification or imaging means, and an electrical contact means for connecting the Cd 1-x Mg x Te crystal to the amplification, measurement, identification or imaging means. 
     
     
       2. The detection system of  claim 1  wherein the crystal has been annealed. 
     
     
       3. The detection system of  claim 1  further comprising an insulating layer between the electrical contact means and the crystal. 
     
     
       4. The detection system of  claim 1  wherein the crystal is doped with a Group III element. 
     
     
       5. The detection system of  claim 4  wherein the Group III element is Indium. 
     
     
       6. The detection system of  claim 4  wherein the Group III element is present in an amount of 1×10 17  cm −3  to 3×10 17  cm −3 . 
     
     
       7. The detection system of  claim 1  wherein the amplification, measurement, identification or imaging means is a spectrum. 
     
     
       8. A method for detecting X- or gamma ray radiation comprising
 (a) providing a solid solution Cd 1-x Mg x Te crystal in the composition range of Cd 0.99 Mg 0.01 Te to Cd 0.71 Mg 0.29 Te; 
 (b) providing an electrical contact means for connecting the Cd 1-x Mg x Te crystal to an amplification, measurement, identification or imaging means; and 
 (c) detecting the presence of the X- or gamma ray radiation. 
 
     
     
       9. The method according to  claim 8  further comprising providing a Group III element dopant to the crystal. 
     
     
       10. The method according to  claim 9  wherein the dopant is Indium. 
     
     
       11. The method according to  claim 9  wherein the dopant is present in an amount of 1×10 17  cm −3  to 3×10 17  cm −3 . 
     
     
       12. The method according to  claim 8  wherein the amplification, measurement, identification or imaging means is a spectrum. 
     
     
       13. The method according to  claim 8  performed at approximately room temperature. 
     
     
       14. The method according to  claim 8  wherein the detecting is performed using a system comprising a bias voltage source to provide positive and negative voltage. 
     
     
       15. The method according to  claim 8  wherein the detecting is performed using a system comprising one or more preamplifiers. 
     
     
       16. The method according to  claim 8  wherein the detecting is performed using a system that is a coaxial, a cross-strip plate, a co-planar, a pixilated, or a pad configuration.

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