US9270879B2ActiveUtilityA1
Imaging sensor capable of phase difference focus detection
Est. expiryMay 24, 2033(~6.8 yrs left)· nominal 20-yr term from priority
Inventors:Masataka Hamada
H04N 25/704H04N 25/77H04N 23/672H04N 23/673H10F 39/8063H10F 39/803H10F 39/18H01L 27/14609H01L 27/14627H01L 27/14643H04N 5/23212H04N 5/3745
82
PatentIndex Score
4
Cited by
17
References
22
Claims
Abstract
An imaging device capable of phase difference focus detection is described. The imaging device includes a plurality of pixels that are 2-dimensionally arranged and which receive image light. At least one pixel of the plurality of pixels comprises: a micro lens; a plurality of photoelectric conversion units, which are biased around an optical axis of the micro lens; and a control unit, which limits generation of electrons photoelectrically converted at at least one photoelectric conversion unit of the plurality of photoelectric conversion units.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. An imaging device comprising:
a plurality of pixels that are 2-dimensionally arranged and which receive image light,
wherein at least one pixel of the plurality of pixels comprises:
a micro lens;
a plurality of photoelectric conversion units, which are biased around an optical axis of the micro lens; and
a control unit, which limits generation of electrons photoelectrically converted at at least one photoelectric conversion unit of the plurality of photoelectric conversion units.
2. The imaging device of claim 1 , wherein the plurality of photoelectric conversion units comprise a plurality of photo diodes; and
the control unit limits generation of photoelectrically converted electrons by changing an electric potential of at least one photo diode of the plurality of photo diodes.
3. The imaging device of claim 1 , wherein the plurality of photoelectric conversion units comprise a plurality of photo transistors; and
the control unit limits generation of photoelectrically converted electrons by changing a gate electric potential of an electron generating unit of at least one photo transistor of the plurality of photo transistors.
4. The imaging device of claim 1 , wherein the plurality of photoelectric conversion units comprise a plurality of photo diodes; and
the control unit comprises a reset unit for discharging electrons generated by the plurality of photo diodes and limits generation of photoelectrically converted electrons by discharging electrons generated by at least one photo diode of the plurality of photo diodes.
5. The imaging device of claim 4 , wherein the reset unit includes a reset circuit for discharging electrons; and
the reset unit is independent from an output unit.
6. The imaging device of claim 1 , wherein at least one pixel, of the plurality pixels, that includes the plurality of photoelectric conversion units is arranged only at a particular region of the imaging device.
7. The imaging device of claim 6 , wherein, from the pixels arranged only at the particular region, pixels of which the photoelectric conversion units are biased in a same direction are arranged in the same direction as the direction in which the corresponding photoelectric conversion units are biased.
8. The imaging device of claim 7 , wherein pixels of the plurality of pixels that include photoelectric conversion units biased in a horizontal direction are arranged at the imaging device in the horizontal direction.
9. The imaging device of claim 7 , wherein pixels of the plurality of pixels that include photoelectric conversion units biased in a vertical direction are arranged at the imaging device in the vertical direction.
10. The imaging device of claim 1 , wherein each pixel of the plurality of pixels included in the imaging device comprises a respective plurality of the photoelectric conversion units.
11. The imaging device of claim 10 , wherein the plurality of pixels, each of which includes the respective plurality of photoelectric conversion units, comprise the plurality of photoelectric conversion units biased in a horizontal direction and a vertical direction.
12. An imaging device comprising:
a plurality of pixels that are 2-dimensionally arranged and which receive image light,
wherein at least one pixel of the plurality of pixels comprises:
a micro lens;
a plurality of photoelectric conversion units, which are biased around an optical axis of the micro lens; and
a control unit, which selects a first output mode for outputting electrons photoelectrically converted at the plurality of photoelectric conversion units or a second output mode for outputting only electrons photoelectrically converted at one of the plurality of photoelectric conversion units;
wherein generation of electrons photoelectrically converted at at least one photoelectric conversion unit is limited in the second output mode.
13. The imaging device of claim 12 , wherein the control units selects the first output mode for an imaging operation; and
the control unit selects the second output mode for a phase difference focusing operation.
14. The imaging device of claim 12 , wherein electrons photoelectrically converted at the plurality of photoelectric conversion units are combined and output in the first output mode.
15. The imaging device of claim 12 , wherein the at least one pixel further comprises a read-out unit which outputs electrons photoelectrically converted at the plurality of photoelectric conversion units.
16. The imaging device of claim 15 , wherein the read-out unit comprises a plurality of read-out transistors for selectively outputting the photoelectrically converted electrons from the plurality of photoelectric conversion units.
17. The imaging device of claim 16 , wherein only electrons photoelectrically converted at one photoelectric conversion unit of the plurality of photoelectric conversion units are output by selectively operating the plurality of read-out transistors in the second output mode.
18. The imaging device of claim 12 , wherein the at least one pixel that comprises the plurality of photoelectric conversion units is arranged only at a particular region of the imaging device.
19. The imaging device of claim 18 , wherein, from the at least one pixel arranged only at the particular region, pixels of which the plurality of photoelectric conversion units are biased in a same direction are arranged in the same direction as the direction in which the corresponding plurality of photoelectric conversion units are biased.
20. The imaging device of claim 19 , wherein the at least one pixel that comprises the plurality of photoelectric conversion units is arranged at the imaging device in a horizontal direction and a vertical direction;
wherein the control unit selects the second output mode for the pixels arranged in the horizontal direction when the pixels arranged in the vertical direction correspond to the first output mode; and
wherein the control unit selects the second output mode for the pixels arranged in the vertical direction when the pixels arranged in the horizontal direction correspond to the first output mode.
21. The imaging device of claim 20 , wherein pixels at points where the pixels arranged in the horizontal direction and the pixels arranged in the vertical direction intersect comprise a plurality of photoelectric conversion units biased in the horizontal direction and the vertical direction.
22. The imaging device of claim 12 , wherein each pixel of the plurality of pixels included in the imaging device comprises the plurality of photoelectric conversion units; and
the plurality of pixels, each of which includes a respective plurality of photoelectric conversion units, comprise the plurality of photoelectric conversion units biased in a horizontal direction and a vertical direction.Join the waitlist — get patent alerts
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