Solid-state imaging device and camera module

Abstract

A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and a light-blocking side wall. The plurality of arrayed pixels each includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is provided for blocking infrared light and formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The light-blocking side wall is formed on a lateral wall of the optical inner filter layer.

What is claimed is: 
     
       1. A solid-state imaging device, comprising:
 a plurality of arrayed pixels each including a photoelectric conversion portion and a pixel transistor; 
 an optical inner filter layer for blocking infrared light, which is formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels; and 
 a light-blocking side wall formed on a lateral wall of the optical inner filter layer, wherein 
 the side wall is formed of a metal film. 
 
     
     
       2. A solid-state imaging device, comprising:
 a plurality of arrayed pixels each including a photoelectric conversion portion and a pixel transistor; 
 an optical inner filter layer for blocking infrared light, which is formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels; and 
 a light-blocking side wall formed on a lateral wall of the optical inner filter layer, 
 wherein the side wall is made of a material with a refractive index different from that of a light-transmissive layer between the optical inner filter layers adjacent to each other. 
 
     
     
       3. The solid-state imaging device according to  claim 2 , wherein
 a plurality of wiring layers is formed of stacked films including a line and an insulating interlayer above the light-receiving surface, and 
 an inner-layer lens is formed between the plurality of wiring layers, facing toward the light-receiving surface of the photoelectric conversion portion. 
 
     
     
       4. A solid-state imaging device, comprising:
 a second pixel between a first pixel and a third pixel, each of the first, second, and third pixels including a photoelectric conversion portion, 
 an optical inner filter layer on a light receiving side of the photoelectric conversion portion of each of the first and third pixels, and 
 a light-blocking side wall on a lateral wall of the optical inner filter layer, 
 wherein the light-blocking side wall is a metal film, and 
 wherein the metal film is tungsten, aluminum, or titanium.