Patterning process

Abstract

A patterning process which uses self-assembly, wherein the patterning process includes: forming a silicon-containing film by applying a silicon-containing film composition having an organic substituent group substituted with an acid labile group onto a substrate to be processed, pattern-exposing of the silicon-containing film, forming a polymer film by applying a self-assembling polymer onto the silicon-containing film, self-assembling the polymer film to form a microdomain structure, forming a pattern on the polymer film, transferring the pattern to the silicon-containing film by using the pattern formed on the polymer as a mask, and transferring the pattern to the substrate to be processed by using the pattern transferred to the silicon-containing film as a mask. There can be provided a pattern having a microdomain structure formed by self-assembly with excellent uniformity and regularity, the pattern having been difficult to be obtained by a conventional self-assembly polymer.

What is claimed is: 
     
       1. A patterning process which uses self-assembly, the patterning process comprising:
 forming a silicon-containing film by applying a silicon-containing film composition onto a substrate to be processed followed by heating, wherein the silicon-containing film composition contains a silicon-containing compound whose main chain is polysiloxane, the silicon-containing compound containing an organic substituent group having a hydroxyl group thereof substituted with an acid labile group or a carboxyl group thereof substituted with an acid labile group, 
 pattern-exposing the silicon-containing film to a high energy beam, followed by a heat treatment thereof, 
 forming a polymer film by applying a self-assembling polymer onto exposed and unexposed portions of the silicon-containing film, 
 self-assembling the polymer film by a heat treatment to form a microdomain structure, 
 forming a pattern by dry-etching the polymer film having the microdomain structure, 
 transferring the pattern to the silicon-containing film by dry-etching by using the pattern formed on the polymer as a mask, and 
 transferring the pattern to the substrate to be processed by dry-etching by using the pattern transferred to the silicon-containing film as a mask. 
 
     
     
       2. The patterning process according to  claim 1 , wherein the silicon-containing film composition contains a photo acid generator. 
     
     
       3. The patterning process according to  claim 2 , wherein the substrate to be processed is an organic hard mask mainly comprised of carbon formed by a CVD method, or an organic film formed by an application type method. 
     
     
       4. The patterning process according to  claim 1 , wherein the substrate to be processed is an organic hard mask mainly comprised of carbon formed by a CVD method, or an organic film formed by an application type method.