Semiconductor device

Abstract

To improve switching characteristics of a transistor in which a channel is formed in an oxide semiconductor layer. A parasitic channel is formed at an end portion of the oxide semiconductor layer because a source and a drain of the transistor are electrically connected to the end portion. That is, when at least one of the source and the drain of the transistor is not electrically connected to the end portion, the parasitic channel is not formed at the end portion. In view of this, a transistor having a structure in which at least one of a source and a drain of the transistor is not or less likely to be electrically connected to an end portion of an oxide semiconductor layer is provided.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a gate over a substrate; 
 a gate insulating layer over the gate; 
 an oxide semiconductor layer comprising a first portion and a second portion, over the gate insulating layer, wherein the first portion is an end portion, and wherein the second portion is a portion except the end portion; and 
 a first conductive layer and a second conductive layer over the oxide semiconductor layer, 
 wherein the first conductive layer is not in contact with the first portion and is in contact with the second portion, 
 wherein the second conductive layer is in contact with the first portion and is not in contact with the second portion, 
 wherein a concentration of a resistance-reducing element of the second portion is lower than a concentration of the resistance-reducing element of the first portion, and 
 wherein a concentration of oxygen of the second portion is higher than a concentration of oxygen of the first portion. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the first portion and the second portion comprise a crystal portion. 
     
     
       3. The semiconductor device according to  claim 1 , wherein the gate, the oxide semiconductor layer, the first conductive layer, and the second conductive layer have a circular shape. 
     
     
       4. The semiconductor device according to  claim 1 , wherein the gate, the oxide semiconductor layer, the first conductive layer, and the second conductive layer have a polygonal shape. 
     
     
       5. The semiconductor device according to  claim 1 , wherein a concentration of hydrogen in the oxide semiconductor layer is lower than or equal to 5×10 19  atoms/cm 3 . 
     
     
       6. The semiconductor device according to  claim 1 , wherein the oxide semiconductor layer comprises at least one of indium and zinc. 
     
     
       7. The semiconductor device according to  claim 1 , wherein a width of the gate is larger than a width of the oxide semiconductor layer in a channel length direction. 
     
     
       8. A semiconductor device comprising:
 a gate over a substrate; 
 a gate insulating layer over the gate; 
 an oxide semiconductor layer comprising a first portion and a second portion, over the gate insulating layer, wherein the first portion is an end portion, and wherein the second portion is a portion except the end portion; and 
 a first conductive layer and a second conductive layer over the oxide semiconductor layer, 
 wherein the first conductive layer is not in contact with the first portion and is in contact with the second portion, 
 wherein the second conductive layer is in contact with the first portion and is not in contact with the second portion, 
 wherein a concentration of a resistance-reducing element of the second portion is lower than a concentration of the resistance-reducing element of the first portion, 
 wherein a concentration of oxygen of the second portion is higher than a concentration of oxygen of the first portion, and 
 wherein the resistance-reducing element is chlorine, fluorine, boron, or hydrogen. 
 
     
     
       9. The semiconductor device according to  claim 8 , wherein the first portion and the second portion comprise a crystal portion. 
     
     
       10. The semiconductor device according to  claim 8 , wherein the gate, the oxide semiconductor layer, the first conductive layer, and the second conductive layer have a circular shape. 
     
     
       11. The semiconductor device according to  claim 8 , wherein the gate, the oxide semiconductor layer, the first conductive layer, and the second conductive layer have a polygonal shape. 
     
     
       12. The semiconductor device according to  claim 8 , wherein a concentration of hydrogen in the oxide semiconductor layer is lower than or equal to 5×10 19  atoms/cm 3 . 
     
     
       13. The semiconductor device according to  claim 8 , wherein the oxide semiconductor layer comprises at least one of indium and zinc. 
     
     
       14. The semiconductor device according to  claim 8 , wherein a width of the gate is larger than a width of the oxide semiconductor layer in a channel length direction.