Method of fabricating an integrated circuit without ground contact pad

Abstract

The disclosure relates to a method of fabricating an integrated circuit of CMOS technology in a semiconductor wafer comprising scribe lines. According to the disclosure, a ground contact pad of the integrated circuit is made in a scribe line of the wafer and is destroyed during a step of individualizing the integrated circuit by singulation of the wafer. A ground contact of the integrated circuit is made on the back side of the integrated circuit when it is assembled in an interconnection package.

The invention claimed is: 
     
       1. A method of fabricating an electronic device, comprising:
 fabricating an integrated circuit, the fabricating including:
 forming scribe lines in a semiconductor wafer, 
 embedding a circuit region in a substrate of the wafer, 
 making, on a front side of the wafer, a ground contact pad of the integrated circuit that is electrically linked to the circuit region and to the substrate, wherein the ground contact pad of the integrated circuit is made in one of the scribe lines of the wafer, and 
 individualizing the integrated circuit by singulating the wafer in the scribe lines and destroying the ground contact pad; and 
 
 assembling the integrated circuit in a package that includes a ground plane and interconnection leads, the assembling including electrically contacting a back side of the integrated circuit with a ground interconnection lead of the package and thereby replacing the ground contact pad destroyed during individualizing the integrated circuit. 
 
     
     
       2. A method according to  claim 1 , wherein the ground interconnection lead forms a prolongation of the ground plane. 
     
     
       3. A method according to  claim 1 , comprising electrically linking the ground interconnection lead to the ground plane of the package using a conductive element. 
     
     
       4. A method according to  claim 1 , wherein the integrated circuit is a CMOS integrated circuit.