Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

Abstract

An optoelectronic semiconductor body comprises a substrate ( 10 ), which has on a first main area ( 12 ) an epitaxial semiconductor layer sequence ( 20 ), suitable for generating electromagnetic radiation, in a first region ( 14 ) and a first trench ( 24 ) in a second region ( 22 ) adjacent to the first region ( 14 ), and at least one second trench ( 30 ) arranged outside the first region ( 14 ). The invention also relates to an optoelectronic semiconductor body and a method for producing an optoelectronic semiconductor body.

1. An optoelectronic semiconductor body, comprising
 a substrate, which has on a first main area an epitaxial semiconductor layer sequence, suitable for generating electromagnetic radiation, in a first region and a first trench in a second region adjacent to the first region; and 
 at least one second trench arranged outside the first region, wherein the second trench at least partially severs the epitaxial semiconductor layer sequence from a side of the epitaxial semiconductor layer sequence facing away from the substrate, wherein the second trench completely severs the epitaxial semiconductor layer sequence from the side of the epitaxial semiconductor layer sequence facing away from the substrate and reaches into the substrate. 
 
     
     
       2. The optoelectronic semiconductor body as claimed in  claim 1 , wherein the second trench is arranged as a separating trench adjacent to the first trench. 
     
     
       3. The optoelectronic semiconductor body as claimed in  claim 2 , wherein the second trench is arranged as a separating trench in each case on both sides of the first trench adjacent to the first trench. 
     
     
       4. The optoelectronic semiconductor body as claimed in  claim 1 , wherein a passivation layer is applied on the first main area in the second region, said passivation layer at least partly covering the second trench. 
     
     
       5. The optoelectronic semiconductor body as claimed in  claim 4 , wherein the passivation layer furthermore at least partly covers sidewalls of the epitaxial semiconductor layer sequence. 
     
     
       6. The optoelectronic semiconductor body as claimed in  claim 4 , wherein the passivation layer at least partly covers sidewalls of the second trench. 
     
     
       7. The optoelectronic semiconductor body as claimed in  claim 4 , wherein the passivation layer comprises an oxide, nitride or fluoride compound. 
     
     
       8. The optoelectronic semiconductor body as claimed in  claim 1 , wherein the second trench extends from the first main area facing away from the substrate into the underlying substrate. 
     
     
       9. The optoelectronic semiconductor body as claimed in  claim 1 , wherein the first region comprises a laser or a light-emitting diode. 
     
     
       10. The optoelectronic semiconductor body as claimed in  claim 9 , wherein the laser is arranged as a ridge on the first main area of the substrate. 
     
     
       11. The optoelectronic semiconductor body as claimed in  claim 1 , wherein the second trench reaches further into the substrate than the first trench. 
     
     
       12. The optoelectronic semiconductor body as claimed in  claim 1 , comprising a further second trench wherein the first trench is arranged between the second trench and the further second trench.