Semiconductor light emitting device

Abstract

A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.

1. A semiconductor light emitting device, comprising:
 a substrate; 
 a plurality of compound semiconductor layers on the substrate, 
 wherein the plurality of compound semiconductor layers comprises
 a first conductive semiconductor layer, 
 an active layer on the first conductive semiconductor layer, and 
 a second conductive semiconductor layer on the active layer; 
 
 a first electrode electrically connected to the first conductive semiconductor layer; 
 a transparent electrode layer on the second conductive semiconductor layer; 
 a second electrode electrically connected directly to the second conductive semiconductor layer through an opening of the transparent electrode layer; and 
 a first roughness comprising a sapphire material on the transparent electrode layer. 
 
     
     
       2. The semiconductor light emitting device according to  claim 1 , further comprising:
 a buffer layer and/or an undoped semiconductor layer using a compound semiconductor of group II to VI elements between the substrate and the first conductive semiconductor layer. 
 
     
     
       3. The semiconductor light emitting device according to  claim 2 , further comprising
 a second roughness comprising a sapphire material formed on at least one of the substrate, the buffer layer, and the undoped semiconductor layer. 
 
     
     
       4. The semiconductor light emitting device according to  claim 1 , wherein a refractive index of the first roughness is small than a refractive index of the transparent electrode layer. 
     
     
       5. The semiconductor light emitting device according to  claim 1 , wherein the first roughness is formed of an irregular interval and a discontinuous pattern. 
     
     
       6. A semiconductor light emitting device, comprising:
 a first conductive semiconductor layer; 
 a transparent electrode layer on the first conductive semiconductor layer; 
 a first electrode on the first conductive semiconductor layer, the first electrode directly connecting to the first conductive semiconductor layer through an opening of the transparent electrode layer; 
 an active layer under the first conductive semiconductor layer; 
 a second conductive semiconductor layer under the active layer; 
 a second electrode layer under a second conductive semiconductor; and 
 a first roughness comprising a sapphire material between second electrode layer and the second conductive semiconductor. 
 
     
     
       7. The semiconductor light emitting device according to  claim 6 , further comprising:
 a second roughness formed on the first conductive semiconductor layer and formed of a sapphire material. 
 
     
     
       8. The semiconductor light emitting device according to  claim 6 , wherein the first conductive semiconductor layer comprises an N-type semiconductor layer using group III-V elements, and the second conductive semiconductor layer comprises a P-type semiconductor layer using group III-V elements. 
     
     
       9. The semiconductor light emitting device according to  claim 6 , further comprising;
 a conductive supporting member formed under the second electrode layer, 
 wherein the second electrode layer comprises at least one of ITO(indium tin oxide), IZO(indium zinc oxide), IZTO(indium zinc tin oxide), IAZO(indium aluminum zinc oxide), IGZO(indium gallium zinc oxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Pt, Rh, Pd, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta.